Scalable Growth of High-Quality MoS 2 Film by Magnetron Sputtering: Application for NO 2 Gas Sensing
29 Mar 2019-pp 1-3
TL;DR: In this paper, a two-step process for growing large-scalable MoS 2 films with superb quality was reported, in which different thickness Mo films were grown on SiO 2 /Si substrates by DC magnetron sputtering technique and the deposited film was then sulfurized in a sulfur-rich environment.
Abstract: To address the formidable challenges associated with large-scale and high-quality fabrication of MoS 2 , we reported a two-step process for growing large-scalable MoS 2 films with superb quality. Firstly, we grow different thickness Mo films on SiO 2 /Si substrates by DC magnetron sputtering technique. Secondly, the deposited film was then sulfurized in a sulfur-rich environment. The qualitative analysis confirmed the growth of highly crystalline and continuous few-layer to multi-layer MoS2 films. We have also examined the sensing performance of deposited ML-MoS 2 film upon NO 2 exposure.
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01 Jan 2022
TL;DR: In this paper , the authors elucidate three important applications of 2D materials: (i) opto-electric applications, (ii) energy storage, and (iii) electronic sensing.
Abstract: In recent times, two dimensional (2D) materials have been widely explored due their extensive applications in realizing electronics, optoelectronics and energy generation/storage devices. Such materials depict improved performance with modifications in their structural orientation, with selective doping, and by formation of heterojunctions. These monolayer structures encompass transition metals and metal oxide (MO) based system. The 2D materials depict high surface to volume ratio resulting in highly sensitive electronic property making them sensitive with respect to changes in their surroundings. In the present chapter, we elucidate three important applications of these 2D materials: (i) opto-electric applications, (ii) energy storage, and (iii) electronic sensing. In this chapter, we will elucidate different novel and high performance 2D materials which are used for the aforementioned applications which includes: (i) graphene and graphene heterojunction as charge transport layer and ternary layer in solar cell and optoelectronic devices, (ii) mxene as a novel material for Li and Na ion batteries, (iii) MoS2 as sensing material for biosensors. Here, a thorough discussion on these 2D materials and the specified applications. In addition, vital advantages of these 2D materials over other conventional materials have also been discussed. This chapter will serve as a guideline for researchers and scholars to obtain an insight into 2D materials and their applications in thrust areas of sensing, energy generation and storage.
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TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Abstract: Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
12,477 citations
IBM1
TL;DR: The electronic structure, transport and optical properties of graphene are discussed, and how these are utilized in exploratory electronic and optoelectronic devices.
Abstract: Graphene is in many respects a nanomaterial with unique properties. Here I discuss the electronic structure, transport and optical properties of graphene, and how these are utilized in exploratory electronic and optoelectronic devices. Some suggestions for needed advances are made.
1,360 citations
TL;DR: It is found that the 1L WSe2 nanosheet is very sensitive to the laser power during characterization, which makes it a promising candidate for optoelectronic applications due to the enhancement of photoluminescence and high current ON/OFF ratio.
Abstract: ConspectusAlthough great progress has been achieved in the study of graphene, the small current ON/OFF ratio in graphene-based field-effect transistors (FETs) limits its application in the fields of conventional transistors or logic circuits for low-power electronic switching. Recently, layered transition metal dichalcogenide (TMD) materials, especially MoS2, have attracted increasing attention. In contrast to its bulk material with an indirect band gap, a single-layer (1L) MoS2 nanosheet is a semiconductor with a direct band gap of ∼1.8 eV, which makes it a promising candidate for optoelectronic applications due to the enhancement of photoluminescence and high current ON/OFF ratio.Compared with TMD nanosheets prepared by chemical vapor deposition and liquid exfoliation, mechanically exfoliated ones possess pristine, clean, and high-quality structures, which are suitable for the fundamental study and potential applications based on their intrinsic thickness-dependent properties. In this Account, we summar...
1,267 citations
TL;DR: It is shown that few-layered vertically aligned MoS2 (FLV-MoS2) films can be used to harvest the whole spectrum of visible light (∼50% of solar energy) and achieve highly efficient water disinfection.
Abstract: Few-layered, vertically aligned MoS2 films can efficiently harvest visible light for photocatalytic water disinfection, allowing >99.999% bacteria to be rapidly inactivated.
643 citations
"Scalable Growth of High-Quality MoS..." refers background in this paper
...The thickness of the grown MoS2 film primarily depends on the thickness of the sputtered Mo film[11]....
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TL;DR: In this paper, the shape change of MoS2 domains is attributed to local changes in the Mo:S ratio of precursors (1:>2, 1:2, and 1:<2) and its influence on the kinetic growth dynamics of edges.
Abstract: Atmospheric-pressure chemical vapor deposition (CVD) is used to grow monolayer MoS2 two-dimensional crystals at elevated temperatures on silicon substrates with a 300 nm oxide layer. Our CVD reaction is hydrogen free, with the sulfur precursor placed in a furnace separate from the MoO3 precursor to individually control their heating profiles and provide greater flexibility in the growth recipe. We intentionally establish a sharp gradient of MoO3 precursor concentration on the growth substrate to explore its sensitivity to the resultant MoS2 domain growth within a relatively uniform temperature range. We find that the shape of MoS2 domains is highly dependent upon the spatial location on the silicon substrate, with variation from triangular to hexagonal geometries. The shape change of domains is attributed to local changes in the Mo:S ratio of precursors (1:>2, 1:2, and 1:<2) and its influence on the kinetic growth dynamics of edges. These results improve our understanding of the factors that influence the...
637 citations
"Scalable Growth of High-Quality MoS..." refers methods in this paper
...In recent years, micromechanical exfoliation, liquid exfoliation, and chemical vapor deposition are some of the frequently used methods to obtain MoS2[7, 9, 10]....
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