Journal ArticleDOI
Schottky barrier engineering in III-V nitrides via the piezoelectric effect
Edward T. Yu,X. Z. Dang,L. S. Yu,D. Qiao,Peter M. Asbeck,S. S. Lau,G. J. Sullivan,Karim S. Boutros,Joan M. Redwing +8 more
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TLDR
In this paper, a method for enhancing effective Schottky barrier heights in III-V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed.Abstract:
A method for enhancing effective Schottky barrier heights in III–V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/AlxGa1−xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for AlxGa1−xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al0.25Ga0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al0.25Ga0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current–voltage measurements performed on Schottky diodes.read more
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Journal ArticleDOI
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
Journal ArticleDOI
Undoped AlGaN/GaN HEMTs for microwave power amplification
L.F. Eastman,V. Tilak,Joseph A. Smart,B.M. Green,E.M. Chumbes,Roman Dimitrov,Hyungtak Kim,Oliver Ambacher,Nils Weimann,T. Prunty,M. J. Murphy,William J. Schaff,James R. Shealy +12 more
TL;DR: In this paper, a two-dimensional electron gas (2DEG) is induced using the strong spontaneous and piezoelectric polarization inherent in the AlGaN/GaN structures, and three-dimensional nonlinear thermal simulations are made to determine the temperature rise from heat dissipation in various geometries.
Journal ArticleDOI
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
TL;DR: In this article, the role of the sample structure geometry on the electric field is exemplified by changing the thickness of the AlGaN barriers in multiple-QW structures and electrostatic arguments well account for the overall trends of the electric-field variations.
Journal ArticleDOI
Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures
TL;DR: In this paper, the role of spontaneous and piezoelectric polarization in III-V nitride heterostructures is investigated and a detailed analysis of their influence in the field effect transistors is presented.
Journal ArticleDOI
Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
TL;DR: In this paper, the gate leakage currents in AlGaN/GaN heterostructure field effect transistor (HFET) structures with conventional and polarization-enhanced barriers have been studied.
References
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Journal ArticleDOI
Very high breakdown voltage and large transconductance realized on gan heterojunction field effect transistors
Yifeng Wu,Bernd Keller,Stacia Keller,D. Kapolnek,Peter Kozodoy,Steven P. DenBaars,Umesh K. Mishra +6 more
TL;DR: In this article, the authors reported record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 μm gate length) and Si doped(1 μm/GaN modulation doped field effect transistors (MODFETs), respectively.
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Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
TL;DR: In this article, electron concentration profiles have been obtained for AlxGa1−xN/GaN heterostructure field effect transistor structures and the measured electron distributions demonstrate the influence of piezoelectric effects in coherently strained layers on III-V nitride heterostructures device characteristics.
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Piezoelectric charge densities in AlGaN/GaN HFETs
TL;DR: In this paper, the piezoelectric charge density at (0001) AlGaN/GaN interfaces is estimated for both MBE and MOCVD structures on sapphire and SiC substrate.
Journal ArticleDOI
The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure
TL;DR: In this paper, it was shown that strongly pronounced piezoelectric properties play a key role in GaN−AlN−GaN semiconductor-insulator-semiconductor (SIS) and related structures.