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Secondary Ion Mass Spectrometry: An Introduction to Principles and Practices
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TLDR
In this article, a practical reference for those involved in secondary ion mass spectrometry (SIMS) is provided, with an emphasis placed on how to recognize and avoid commonly occurring analysis induced distortions.Abstract:
DESCRIPTION Serves as a practical reference for those involved in Secondary Ion Mass Spectrometry (SIMS) • Introduces SIMS along with the highly diverse fields (Chemistry, Physics, Geology and Biology) to it is applied using up to date illustrations • Introduces the accepted fundamentals and pertinent models associated with elemental and molecular sputtering and ion emission • Covers the theory and modes of operation of the instrumentation used in the various forms of SIMS (Static vs Dynamic vs Cluster ion SIMS) • Details how data collection/processing can be carried out, with an emphasis placed on how to recognize and avoid commonly occurring analysis induced distortions • Presented as concisely as believed possible with All sections prepared such that they can be read independently of each otherread more
Citations
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Journal ArticleDOI
A New Radio Frequency Plasma Oxygen Primary Ion Source on Nano Secondary Ion Mass Spectrometry for Improved Lateral Resolution and Detection of Electropositive Elements at Single Cell Level
Julien Malherbe,Florent Penen,Marie-Pierre Isaure,Julia Frank,Gerd Hause,Dirk Dobritzsch,Etienne Gontier,Francois Horreard,Francois Hillion,Dirk Schaumlöffel +9 more
TL;DR: The new rf plasma oxygen primary ion source offered a net improvement in terms of primary beam current density compared to the commonly used duoplasmatron source, which resulted in higher ultimate lateral resolutions down to 37 nm and which provided a 5-45 times higher apparent sensitivity for electropositive elements.
Journal ArticleDOI
On the role of precipitates in hydrogen trapping and hydrogen embrittlement of a nickel-based superalloy
TL;DR: In this paper, the authors report imaging of hydrogen/deuterium concentrations in δ phase and carbonitrides, and at their interfaces with the matrix in a nickel-based superalloy using Nanoscale Secondary Ion Mass Spectrometry.
Journal ArticleDOI
Tutorial: The systematics of ion beam sputtering for deposition of thin films with tailored properties
Carsten Bundesmann,Horst Neumann +1 more
TL;DR: In this article, the authors describe the systematics of IBSD, the correlation between process parameters, properties of the film-forming particles, and thin film properties, as well as fundamental physical aspects, experimental setups, and techniques for thin film deposition and particle characterization.
Journal ArticleDOI
Ion implantation in β-Ga2O3: Physics and technology
Alena Nikolskaya,E. V. Okulich,Dmitry Korolev,Anton Stepanov,Dmitry Nikolichev,Alexey Mikhaylov,David Tetelbaum,A. V. Almaev,Charles A. Bolzan,Antônio BuaczikJr.,Raquel Giulian,Pedro Luis Grande,Ashok Kumar,Mahesh Kumar,D. Gogova +14 more
TL;DR: In this paper, the status of ion implantation in β-Ga2O3 is reviewed and the results of experimental study of damage under ion irradiation and the properties of Ga 2O3 layers doped by ion implantations are discussed.
Journal ArticleDOI
Dopant, composition and carrier profiling for 3D structures
Wilfried Vandervorst,Claudia Fleischmann,Janusz Bogdanowicz,Alexis Franquet,Umberto Celano,Kristof Paredis,A. Budrevich +6 more
TL;DR: In this article, the authors evaluate the performance of 3D metrology tools and concepts for 3D devices and structures, and assess not only the ability to achieve 3D spatial resolution, but also the physical property which is probed, i.e., dopants versus carriers, as well as the complexity of the method used because this impacts on success rate, turn-around time, throughput, automation etc.
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