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Journal ArticleDOI

Seebeck effect in magnetic tunnel junctions

TL;DR: The magneto-Seebeck effect as mentioned in this paper is observed when a magnetic configuration changes the charge-based Seebeck coefficient, which can be measured as a voltage change directly without conversion of a spin current.
Abstract: Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, that is, the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge-based Seebeck coefficient. In particular, the Seebeck coefficient changes during the transition from a parallel to an antiparallel magnetic configuration in a tunnel junction. In this respect, it is the analogue to the tunnelling magnetoresistance. The Seebeck coefficients in parallel and antiparallel configurations are of the order of the voltages known from the charge-Seebeck effect. The size and sign of the effect can be controlled by the composition of the electrodes' atomic layers adjacent to the barrier and the temperature. The geometric centre of the electronic density of states relative to the Fermi level determines the size of the Seebeck effect. Experimentally, we realized 8.8% magneto-Seebeck effect, which results from a voltage change of about -8.7 μV K⁻¹ from the antiparallel to the parallel direction close to the predicted value of -12.1 μV K⁻¹. In contrast to the spin-Seebeck effect, it can be measured as a voltage change directly without conversion of a spin current.

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Citations
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Journal ArticleDOI
TL;DR: A brief overview of the state of the art of spin caloritronics can be found in this article, where the authors describe the science and technology of controlling heat currents by the electron spin degree of freedom (and vice versa).
Abstract: This is a brief overview of the state of the art of spin caloritronics, the science and technology of controlling heat currents by the electron spin degree of freedom (and vice versa)

1,320 citations

Journal ArticleDOI
TL;DR: It is demonstrated, by experiment and theory, that the temporal shape of femtosecond spin current bursts can be manipulated by using specifically designed magnetic heterostructures, which opens the door to engineering high-speed spintronic devices and, potentially, broadband terahertz emitters.
Abstract: In spin-based electronics, information is encoded by the spin state of electron bunches Processing this information requires the controlled transport of spin angular momentum through a solid, preferably at frequencies reaching the so far unexplored terahertz regime Here, we demonstrate, by experiment and theory, that the temporal shape of femtosecond spin current bursts can be manipulated by using specifically designed magnetic heterostructures A laser pulse is used to drive spins from a ferromagnetic iron thin film into a non-magnetic cap layer that has either low (ruthenium) or high (gold) electron mobility The resulting transient spin current is detected by means of an ultrafast, contactless amperemeter based on the inverse spin Hall effect, which converts the spin flow into a terahertz electromagnetic pulse We find that the ruthenium cap layer yields a considerably longer spin current pulse because electrons are injected into ruthenium d states, which have a much lower mobility than gold sp states Thus, spin current pulses and the resulting terahertz transients can be shaped by tailoring magnetic heterostructures, which opens the door to engineering high-speed spintronic devices and, potentially, broadband terahertz emitters

485 citations

Journal ArticleDOI
TL;DR: The theoretical basis for understanding the spin Seebeck effect is presented and the inverse spin Hall effect converts the injected spin current into a transverse charge voltage, thereby producing electromotive force as in the conventional charge Seebeck device.
Abstract: The spin Seebeck effect refers to the generation of a spin voltage caused by a temperature gradient in a ferromagnet, which enables the thermal injection of spin currents from the ferromagnet into an attached nonmagnetic metal over a macroscopic scale of several millimeters. The inverse spin Hall effect converts the injected spin current into a transverse charge voltage, thereby producing electromotive force as in the conventional charge Seebeck device. Recent theoretical and experimental efforts have shown that the magnon and phonon degrees of freedom play crucial roles in the spin Seebeck effect. In this article, we present the theoretical basis for understanding the spin Seebeck effect and briefly discuss other thermal spin effects.

398 citations

Journal ArticleDOI
TL;DR: The spin Seebeck effect refers to the generation of a spin voltage caused by a temperature gradient in a ferromagnet, which enables the thermal injection of spin currents from the ferromagnetic magnet into an attached nonmagnetic metal over a macroscopic scale of several millimeters as mentioned in this paper.
Abstract: The spin Seebeck effect refers to the generation of a spin voltage caused by a temperature gradient in a ferromagnet, which enables the thermal injection of spin currents from the ferromagnet into an attached nonmagnetic metal over a macroscopic scale of several millimeters. The inverse spin Hall effect converts the injected spin current into a transverse charge voltage, thereby producing electromotive force as in the conventional charge Seebeck device. Recent theoretical and experimental efforts have shown that the magnon and phonon degrees of freedom play crucial roles in the spin Seebeck effect. In this paper, we present the theoretical basis for understanding the spin Seebeck effect and briefly discuss other thermal spin effects.

383 citations

Journal ArticleDOI
TL;DR: In this article, the authors review the need for multiscale modeling to address the processes starting from electronic excitation of the spin system on the picometer length scale and sub-femtosecond time scale, to spin wave generation, and towards the modeling of ultrafast phase transitions that altogether determine the response time of the ferromagnetic system.
Abstract: This year the discovery of femtosecond demagnetization by laser pulses is 20 years old. For the first time, this milestone work by Bigot and coworkers gave insight directly into the time scales of microscopic interactions that connect the spin and electron system. While intense discussions in the field were fueled by the complexity of the processes in the past, it now became evident that it is a puzzle of many different parts. Rather than providing an overview that has been presented in previous reviews on ultrafast processes in ferromagnets, this perspective will show that with our current depth of knowledge the first applications are developed: THz spintronics and all-optical spin manipulation are becoming more and more feasible. The aim of this perspective is to point out where we can connect the different puzzle pieces of understanding gathered over 20 years to develop novel applications. Based on many observations in a large number of experiments. Differences in the theoretical models arise from the localized and delocalized nature of ferromagnetism. Transport effects are intrinsically non-local in spintronic devices and at interfaces. We review the need for multiscale modeling to address the processes starting from electronic excitation of the spin system on the picometer length scale and sub-femtosecond time scale, to spin wave generation, and towards the modeling of ultrafast phase transitions that altogether determine the response time of the ferromagnetic system. Today, our current understanding gives rise to the first usage of ultrafast spin physics for ultrafast magnetism control: THz spintronic devices. This makes the field of ultrafast spin-dynamics an emerging topic open for many researchers right now.

219 citations

References
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Journal ArticleDOI
09 Oct 2008-Nature
TL;DR: The spin Seebeck effect allows us to pass a pure spin current, a flow of electron spins without electric currents, over a long distance, and is directly applicable to the production of spin-voltage generators, which are crucial for driving spintronic devices.
Abstract: The generation of electric voltage by placing a conductor in a temperature gradient is called the Seebeck effect. Its efficiency is represented by the Seebeck coefficient, S, which is defined as the ratio of the generated electric voltage to the temperature difference, and is determined by the scattering rate and the density of the conduction electrons. The effect can be exploited, for example, in thermal electric-power generators and for temperature sensing, by connecting two conductors with different Seebeck coefficients, a device called a thermocouple. Here we report the observation of the thermal generation of driving power, or voltage, for electron spin: the spin Seebeck effect. Using a recently developed spin-detection technique that involves the spin Hall effect, we measure the spin voltage generated from a temperature gradient in a metallic magnet. This thermally induced spin voltage persists even at distances far from the sample ends, and spins can be extracted from every position on the magnet simply by attaching a metal. The spin Seebeck effect observed here is directly applicable to the production of spin-voltage generators, which are crucial for driving spintronic devices. The spin Seebeck effect allows us to pass a pure spin current, a flow of electron spins without electric currents, over a long distance. These innovative capabilities will invigorate spintronics research.

1,798 citations

Journal ArticleDOI
TL;DR: In this article, the authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300K in Ta∕Co20Fe60B20∕MgO∕SiO2 or Co20Fe 60B20 ∕Ta pseudo-spin-valve magnetic tunnel junction junction annealed at 525°C.
Abstract: The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300K in Ta∕Co20Fe60B20∕MgO∕Co20Fe60B20∕Ta pseudo-spin-valve magnetic tunnel junction annealed at 525°C. To obtain high TMR ratio, it was found critical to anneal the structure at high temperature above 500°C, while suppressing the Ta diffusion into CoFeB electrodes and in particular to the CoFeB∕MgO interface. X-ray diffraction measurement of MgO on SiO2 or Co20Fe60B20 shows that an improvement of MgO barrier quality, in terms of the degree of the (001) orientation and stress relaxation, takes place at annealing temperatures above 450°C. The highest TMR ratio observed at 5K was 1144%.

1,415 citations

Journal ArticleDOI
TL;DR: A brief overview of the state of the art of spin caloritronics can be found in this article, where the authors describe the science and technology of controlling heat currents by the electron spin degree of freedom (and vice versa).
Abstract: This is a brief overview of the state of the art of spin caloritronics, the science and technology of controlling heat currents by the electron spin degree of freedom (and vice versa)

1,320 citations

Journal ArticleDOI
TL;DR: In this paper, it was shown that the magnetic insulator LaY(2)Fe(5)O(12) can convert a heat flow into a spin voltage, which can then be converted into an electric voltage as a result of the inverse spin Hall effect.
Abstract: Thermoelectric generation is an essential function in future energy-saving technologies. However, it has so far been an exclusive feature of electric conductors, a situation which limits its application; conduction electrons are often problematic in the thermal design of devices. Here we report electric voltage generation from heat flowing in an insulator. We reveal that, despite the absence of conduction electrons, the magnetic insulator LaY(2)Fe(5)O(12) can convert a heat flow into a spin voltage. Attached Pt films can then transform this spin voltage into an electric voltage as a result of the inverse spin Hall effect. The experimental results require us to introduce a thermally activated interface spin exchange between LaY(2)Fe(5)O(12) and Pt. Our findings extend the range of potential materials for thermoelectric applications and provide a crucial piece of information for understanding the physics of the spin Seebeck effect.

1,011 citations

Journal ArticleDOI
TL;DR: The spin-Seebeck effect is observed in a ferromagnetic semiconductor, GaMnAs, which allows flexible design of the magnetization directions, a larger spin polarization, and measurements across the magnetic phase transition, even in the absence of longitudinal charge transport.
Abstract: Reducing the heat generated in traditional electronics is a chief motivation for the development of spin-based electronics, called spintronics. Spin-based transistors that do not strictly rely on the raising or lowering of electrostatic barriers can overcome scaling limits in charge-based transistors. Spin transport in semiconductors might also lead to dissipation-less information transfer with pure spin currents. Despite these thermodynamic advantages, little experimental literature exists on the thermal aspects of spin transport in solids. A recent and surprising exception was the discovery of the spin-Seebeck effect, reported as a measurement of a redistribution of spins along the length of a sample of permalloy (NiFe) induced by a temperature gradient. This macroscopic spatial distribution of spins is, surprisingly, many orders of magnitude larger than the spin diffusion length, which has generated strong interest in the thermal aspects of spin transport. Here, the spin-Seebeck effect is observed in a ferromagnetic semiconductor, GaMnAs, which allows flexible design of the magnetization directions, a larger spin polarization, and measurements across the magnetic phase transition. This effect is observed even in the absence of longitudinal charge transport. The spatial distribution of spin currents is maintained across electrical breaks, highlighting the local nature of this thermally driven effect.

663 citations