Selected failure mechanisms of modern power modules
TL;DR: This compendium provides the main failure modes, the physical or chemical processes that lead to the failure, and reports some major technological countermeasures, which are used for realizing the very stringent reliability requirements imposed in particular by the electrical traction applications.
About: This article is published in Microelectronics Reliability.The article was published on 2002-04-01. It has received 862 citations till now. The article focuses on the topics: Power module.
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TL;DR: The state of the art in condition monitoring for power electronics can be found in this paper, where the authors present a review of the current state-of-the-art in power electronics condition monitoring.
Abstract: Condition monitoring (CM) has already been proven to be a cost effective means of enhancing reliability and improving customer service in power equipment, such as transformers and rotating electrical machinery. CM for power semiconductor devices in power electronic converters is at a more embryonic stage; however, as progress is made in understanding semiconductor device failure modes, appropriate sensor technologies, and signal processing techniques, this situation will rapidly improve. This technical review is carried out with the aim of describing the current state of the art in CM research for power electronics. Reliability models for power electronics, including dominant failure mechanisms of devices are described first. This is followed by a description of recently proposed CM techniques. The benefits and limitations of these techniques are then discussed. It is intended that this review will provide the basis for future developments in power electronics CM.
820 citations
Cites background from "Selected failure mechanisms of mode..."
...Bond wire liftoff has been observed to affect MOSFETs, IGBTs, and freewheeling diodes [64], and is regarded as a principal failure mechanism for power electronics modules....
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TL;DR: In this article, the three major aspects of power electronics reliability are discussed, respectively, which cover physics-of-failure analysis of critical power electronic components, state-ofthe-art design for reliability process and robustness validation, and intelligent control and condition monitoring to achieve improved reliability under operation.
Abstract: Power electronics has progressively gained an important status in power generation, distribution, and consumption. With more than 70% of electricity processed through power electronics, recent research endeavors to improve the reliability of power electronic systems to comply with more stringent constraints on cost, safety, and availability in various applications. This paper serves to give an overview of the major aspects of reliability in power electronics and to address the future trends in this multidisciplinary research direction. The ongoing paradigm shift in reliability research is presented first. Then, the three major aspects of power electronics reliability are discussed, respectively, which cover physics-of-failure analysis of critical power electronic components, state-of-the-art design for reliability process and robustness validation, and intelligent control and condition monitoring to achieve improved reliability under operation. Finally, the challenges and opportunities for achieving more reliable power electronic systems in the future are discussed.
531 citations
Cites background from "Selected failure mechanisms of mode..."
...Especially, much interesting work from the semiconductor side investigates the failure mechanisms of insulated-gate bipolar transistor (IGBT) modules [51] and physical-based lifetime models [52]....
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TL;DR: An experimental study on the ageing of insulated-gate bipolar transistor (IGBT) power modules shows that ageing mechanisms mainly concern wire bonds and emitter metallization, with gradual impact depending on protocol severity.
Abstract: This paper presents an experimental study on the ageing of insulated-gate bipolar transistor (IGBT) power modules. The aim is to identify the effects of power cycling on these devices with high baseplate temperatures (60 °C to 90 °C) and wide temperature swings (60 °C to 100 °C). These values for thermal stresses have been defined according to automotive applications. The test conditions are provided by two types of test benches that will be described in this paper. The changes in electrical and thermal indicators are observed regularly by a monitoring system. At the end of the test (reaching damage criterion or failure), different analyses are performed (acoustic scanning and SEM imaging), and the damage is listed systematically. Nineteen samples of 600-V 200-A IGBT modules were thus aged using five different power-cycling protocols. The final summary of results shows that ageing mechanisms mainly concern wire bonds and emitter metallization, with gradual impact depending on protocol severity.
469 citations
TL;DR: An overview of the major failure mechanisms of IGBT modules and their handling methods in power converter systems improving reliability is presented in this article, where fault-tolerant strategies for improving the reliability of power electronic systems under field operation are explained and compared in terms of performance and cost.
Abstract: Power electronics plays an important role in a wide range of applications in order to achieve high efficiency and performance. Increasing efforts are being made to improve the reliability of power electronics systems to ensure compliance with more stringent constraints on cost, safety, and availability in different applications. This paper presents an overview of the major failure mechanisms of IGBT modules and their handling methods in power converter systems improving reliability. The major failure mechanisms of IGBT modules are presented first, and methods for predicting lifetime and estimating the junction temperature of IGBT modules are then discussed. Subsequently, different methods for detecting open- and short-circuit faults are presented. Finally, fault-tolerant strategies for improving the reliability of power electronic systems under field operation are explained and compared in terms of performance and cost.
466 citations
Cites background from "Selected failure mechanisms of mode..."
...Therefore, the possibility of failure is higher in the solder joint between DCB and the baseplate [11]–[13]....
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References
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Book•
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01 Jan 1987
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Abstract: Carrier Transport Physics Breakdown Voltage Power Junction Field-Effect Transistors Power Field-Controlled Diodes Power Metal-Oxide-Semiconductor Field Effect Transistors Power MOS-Bipolar Devices New Rectifier Concepts Synopsis References Index
783 citations
Proceedings Article•
01 Jan 1988TL;DR: In this article, the importance of the involvement of the design and manufacturing team in achieving reliability of microelectronic devices is highlighted. And a method of verifying reliability goals through calculation of failure rates based on life test parameters is described.
Abstract: The author points out the importance of the involvement of the design and manufacturing team in achieving reliability of microelectronic devices. A method of verifying reliability goals through calculation of failure rates based on life test parameters is described. An example illustrating the method is shown. >
441 citations
Book•
30 Jun 1997
TL;DR: In this article, the authors present microelectronic device failure mechanisms in terms of their dependence on steady state temperature, temperature cycle, temperature gradient, and rate of change of temperature at the chip and package level.
Abstract: This book raises the level of understanding of thermal design criteria It provides the design team with sufficient knowledge to help them evaluate device architecture trade-offs and the effects of operating temperatures The author provides readers a sound scientific basis for system operation at realistic steady state temperatures without reliability penalties Higher temperature performance than is commonly recommended is shown to be cost effective in production for life cycle costsThe microelectronic package considered in the book is assumed to consist of a semiconductor device with first-level interconnects that may be wirebonds, flip-chip, or tape automated bonds; die attach; substrate; substrate attach; case; lid; lid seal; and lead seal The temperature effects on electrical parameters of both bipolar and MOSFET devices are discussed, and models quantifying the temperature effects on package elements are identified Temperature-related models have been used to derive derating criteria for determining the maximum and minimum allowable temperature stresses for a given microelectronic package architectureThe first chapter outlines problems with some of the current modeling strategies The next two chapters present microelectronic device failure mechanisms in terms of their dependence on steady state temperature, temperature cycle, temperature gradient, and rate of change of temperature at the chip and package level Physics-of-failure based models used to characterize these failure mechanisms are identified and the variabilities in temperature dependence of each of the failure mechanisms are characterized Chapters 4 and 5 describe the effects of temperature on the performance characteristics of MOS and bipolar devices Chapter 6 discusses using high-temperature stress screens, including burn-in, for high-reliability applications The burn-in conditions used by some manufacturers are examined and a physics-of-failure approach is described The
124 citations
TL;DR: In this article, the potential of these technologies to enhance module reliability and lifetime through a power cycling test is assessed through failure analysis results and the failure mechanisms related to each technology are explained in detail.
106 citations
"Selected failure mechanisms of mode..." refers background in this paper
...On the contrary, during high-voltage test or field operation, a frequently observed secondary failure mechanism is the triggering of parasitics....
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