Journal ArticleDOI
Self-aligned surface treatment for thin-film organic transistors
Kris Myny,Stijn De Vusser,Soeren Steudel,Dimitri Janssen,Robert Muller,Stijn De Jonge,Stijn Verlaak,Jan Genoe,Paul Heremans +8 more
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TLDR
In this article, an ultrathin solution-processed polymer layer is applied as surface treatment for organic thin-film transistors, which is compatible with the use of the bottom contact configuration, despite the fact that the polymeric surface treatment does not stand a photolithographic step.Abstract:
For organic thin-film transistors where source-drain contacts are defined on the gate dielectric prior to the deposition of the semiconductor (“bottom-contact” configuration), the gate dielectric is often treated with a self-assembled molecular monolayer prior to deposition of the organic semiconductor. In this letter, we describe a method to apply an ultrathin solution-processed polymer layer as surface treatment. Our method is compatible with the use of the bottom-contact configuration, despite the fact that the polymeric surface treatment does not stand a photolithographic step. Furthermore, we show that our surface treatment results in superior transistor performance.read more
Citations
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Journal ArticleDOI
Thin-Film Morphology of Inkjet-Printed Single-Droplet Organic Transistors Using Polarized Raman Spectroscopy: Effect of Blending TIPS-Pentacene with Insulating Polymer
David James,B. K. Charlotte Kjellander,Wiljan T. T. Smaal,Gerwin H. Gelinck,Craig Combe,Iain McCulloch,Richard Wilson,Jeremy Burroughes,Donal D. C. Bradley,Ji-Seon Kim,Ji-Seon Kim +10 more
TL;DR: Thin-film morphology studies of inkjet-printed single-droplet organic thin-film transistors (OTFTs) are reported using angle-dependent polarized Raman spectroscopy to determine the degree of molecular order and to spatially resolve the orientation of the conjugated backbones of the 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-Pentacene) molecules.
Journal ArticleDOI
Correlation between bias stress instability and phototransistor operation of pentacene thin-film transistors
TL;DR: In this article, the use of pentacene thin-film transistors as phototransistors is studied and the shift in turn-on voltage responsible for the high photosensitivity of these devices is shown to be strongly dependent on illumination time and applied gate voltage.
Journal ArticleDOI
On the Origin of Contact Resistances of Organic Thin Film Transistors
TL;DR: A model is presented that describes the gate-voltage-dependent contact resistance and channel-length-dependent charge carrier mobility of small-molecule-based organic thin-film transistors in top and bottom drain/source contact configuration.
Journal ArticleDOI
High-Performance Flexible Bottom-Gate Organic Field-Effect Transistors with Gravure Printed Thin Organic Dielectric
Nikolay L. Vaklev,Robert Muller,Beinn V. O. Muir,David James,Roger Pretot,Paul Adriaan Van Der Schaaf,Jan Genoe,Ji-Seon Kim,Joachim H. G. Steinke,Alasdair J. Campbell +9 more
TL;DR: OFETs with a bottom-gate (BG) bottom-contact (BC) geometry have an advantage in that the organic semiconducting layer is deposited last, allowing easy fabrication and patterning of micron-scale OFET channels, electrodes and interconnects by conventional photolithographic methods.
Journal ArticleDOI
Influence of Thiol Self‐Assembled Monolayer Processing on Bottom‐Contact Thin‐Film Transistors Based on n‐Type Organic Semiconductors
Jangdae Youn,Geetha R. Dholakia,Hui Huang,Jonathan W. Hennek,Antonio Facchetti,Tobin J. Marks +5 more
TL;DR: In this article, the influence of thiol metal contact treatment on the molecular-level structures of such interfaces was investigated using hexamethyldisilazane (HMDS)-treated SiO2 gate dielectrics.
References
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Journal ArticleDOI
General observation of n-type field-effect behaviour in organic semiconductors
Lay-Lay Chua,Lay-Lay Chua,Jana Zaumseil,Jui Fen Chang,Eric C.W. Ou,Peter K. H. Ho,Peter K. H. Ho,Henning Sirringhaus,Richard H. Friend +8 more
TL;DR: It is demonstrated that the use of an appropriate hydroxyl-free gate dielectric—such as a divinyltetramethylsiloxane-bis(benzocyclobutene) derivative (BCB; ref. 6)—can yield n-channel FET conduction in most conjugated polymers, revealing that electrons are considerably more mobile in these materials than previously thought.
Journal ArticleDOI
Flexible active-matrix displays and shift registers based on solution-processed organic transistors.
Gerwin H. Gelinck,H. Edzer A. Huitema,Erik van Veenendaal,Eugenio Cantatore,Laurens Schrijnemakers,Jan B.P.H. Philips Ip Standards Van Der Putten,Tom C. T. Geuns,Monique J. Beenhakkers,Jacobus Bernardus Giesbers,Bart-Hendrik Huisman,Eduard J. Meijer,Estrella Mena Benito,Fredericus J. Touwslager,Albert W. Marsman,Bas Jan Emile Van Rens,Dago M. de Leeuw +15 more
TL;DR: Flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates based on 1,888 transistors are demonstrated, which are the largest organic integrated circuits reported to date.
Journal ArticleDOI
Recent Progress in Organic Electronics: Materials, Devices, and Processes
Tommie W. Kelley,Paul F. Baude,Chris Gerlach,David E. Ender,Dawn V. Muyres,Michael A. Haase,Dennis E. Vogel,Steven D. Theiss +7 more
TL;DR: Research in organic electronics has included advances in materials, devices, and processes as mentioned in this paper, which are enabling the incorporation of organic electronic components in products including OLED displays and flexible electronic paper.
Journal ArticleDOI
Pentacene-based radio-frequency identification circuitry
TL;DR: In this paper, a Pentacene-based thin-film integrated circuit with polymeric shadow masks and powered by near-field coupling at radio frequencies of 125 kHz and above 6 MHz has been demonstrated.
Journal ArticleDOI
Pentacene-based organic thin-film transistors
TL;DR: In this paper, the authors show that the large sub-threshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with sub-reshold slope similar to amorphous silicon devices are possible.
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