Journal ArticleDOI
Semi‐insulator‐embedded InGaAsP/InP flat‐surface buried heterostructure laser
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In this article, a new structure semi-insulator embedding flat surface buried heterostructure 1.3 μm InGaAsP/InP laser has been developed using chloride vapor phase epitaxy.Abstract:
A new structure semi‐insulator‐embedded flat‐surface buried heterostructure 1.3 μm InGaAsP/InP laser has been developed using chloride vapor phase epitaxy. cw threshold currents as low as 18 mA and high‐temperature cw operation up to 100 °C have been obtained. Small‐signal response above 4 GHz has been achieved and no remarkable roll‐off has been observed, which is due to small parasitic capacitance.read more
Citations
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Journal ArticleDOI
Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications
TL;DR: In this article, a spectrum of optoelectronic properties of and uses for semi-insulating semiconductor heterostructures and thin films, including epilayers and quantum wells, are discussed.
Journal ArticleDOI
Selective growth of AlxGa1−xAs embedded in etched grooves on GaAs by low-pressure OMVPE
TL;DR: In this article, a planar buried structure of GaAs and Al x Ga 1−x As multilayers has been obtained in groo 3 to 1000 μm in width.
Journal ArticleDOI
Analysis of leakage current in buried heterostructure lasers with semiinsulating blocking layers
TL;DR: In this article, an effective device structure for reducing leakage current in buried heterostructure laser diodes with semi-insulating InP blocking layers is analyzed using a semiconductor device simulator.
Journal ArticleDOI
Planar‐embedded InGaAsP/InP heterostructure laser with a semi‐insulating InP current‐blocking layer grown by metalorganic chemical vapor deposition
Abstract: We used metalorganic chemical vapor deposition to fabricate a planar‐embedded InGaAsP/InP heterostructure laser with a semi‐insulating InP current‐blocking layer The laser exhibits cw operation with a low, 20 mA threshold current and a high external differential quantum efficiency of 40% at room temperature Measurements have also shown a small‐signal frequency response of 10 GHz due to an extremely small parasitic capacitance of 35 pF
Journal ArticleDOI
Planar buried heterostructure InP/GaInAs lasers grown entirely by OMVPE
Abstract: GaInAs/InP planar buried heterostructure (PBH) lasers with semi-insulating blocking layers were grown in an `all? atmospheric OMVPE system. These layers had current thresholds as low as 35 mA and differential quantum efficiencies of ?16% at a wavelength of 1.64 ?m. The maximum power output was 80 mW pulsed and 8mWCW.
References
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Journal ArticleDOI
InGaAsP double-channel- planar-buried-heterostructure laser diode (DC-PBH LD) with effective current confinement
Ikuo Mito,Mitsuhiro Kitamura,Kohroh Kobayashi,S. Murata,M. Seki,Y. Odagiri,H. Nishimoto,M. Yamaguchi +7 more
TL;DR: In this article, a 1.3-μm InGaAsP semiconductor laser is described, in which effective current confinement into the active region has been realized, and a p-n-p-n current blocking structure is made by liquid-phase epitaxy (LPE) on both sides of the active-stripe mesa which is defined by a pair of channels in the double-heterostructure wafer.
Journal ArticleDOI
V-grooved substrate buried heterostructure InGaAsP/InP laser emitting at 1.3 µm wavelength
TL;DR: In this article, the aging results of the V -grooved substrate buried heterostructure (VSB) InGaAsP/InP laser are described. But the active region width below 2.5 μm and the thickness of 0.15-0.2 µm are shown to give stable fundamental mode operation and good temperature characteristics.
Journal ArticleDOI
Long Wavelength InGaAsP/InP Lasers for Optical Fiber Communication Systems
TL;DR: In this paper, the fabrication and lasing characteristics of buried heterostructure InGaAsP/InP lasers emitting at 1.3 μτη are described, and the optimization of stripe width and the reduction of leakage current result in low threshold fundamental-transverse-mode operation up to high temperatures.
Journal ArticleDOI
InGaAsP/InP buried crescent laser diode emitting at 1.3 µm wavelength
E. Oomura,H. Higuchi,Y. Sakakibara,R. Hirano,Hirofumi Namizaki,W. Susaki,Ikeda Kenji,K. Fujikawa +7 more
TL;DR: In this paper, the fabrication procedure, designing of an active region and a p-n-p-n current blocking structure, characteristics and the aging results of an InGaAsP/InP buried crescent (BC) laser diode are described.
Journal ArticleDOI
Erratum: Low-threshold high-speed 1.55 μm vapour phase transported buried heterostructure lasers (VPTBH)
Thomas L. Koch,Larry A. Coldren,T. J. Bridges,E. G. Burkhardt,P. J. Corvini,Barry Miller,D. P. Wilt +6 more
TL;DR: In this paper, a 1.55 μm InGaAsP buried heterostructure laser has been fabricated using a hydride vapour phase epitaxial regrowth technique.