Journal ArticleDOI
Semiconducting behavior of Ag2Te thin films and the dependence of band gap on thickness
V. Damodara Das,D. Karunakaran +1 more
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In this paper, the electrical resistance of Ag2Te films has been measured as a function of temperature during heating, which was carried out immediately after the film formation, and the observed exponential decrease of resistance with temperature up to the transition point points to the semiconducting nature of the low temperature polymorph of ag2Te.Abstract:
Thin films of Ag2Te of various thicknesses in the range 500–1500 A have been prepared by thermal evaporation of the compound under vacuum on clean glass substrates held at room temperature. The electrical resistance of the films has been measured as a function of temperature during heating, which was carried out immediately after the film formation. The observed exponential decrease of resistance with temperature up to the transition point points to the semiconducting nature of the low temperature polymorph of Ag2Te. The band gap of the low temperature phase is calculated for various thicknesses of the films and it is found that the band gap is a function of film thickness, increasing with decreasing thickness. The increase in the band gap, which was found to be inversely proportional to the square of the film thickness, is attributed to quantization of electron momentum component normal to film plane.read more
Citations
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Electrodeposition of Cu2ZnSnS4 thin films onto TiO2 nanorods for photocatalytic application: Effect of deposition time
TL;DR: In this article, the authors reported the synthesis of Cu2ZnSnS4/TiO2 (NRs) heterojunction with different CZTS deposition time by a combination of hydrothermal and electrodeposition technique.
Journal ArticleDOI
Ellipsometric studies on cupric telluride thin films
TL;DR: The optical properties of cupric telluride (CuTe) thin films have been studied in the wavelength range 310-800 nm using spectroscopic ellipsometry (SE) as discussed by the authors.
Journal ArticleDOI
Optical band gap of thin films of SnSeSnSe2 eutectic alloy
S.S. Siddiqui,C.F. Desai +1 more
TL;DR: In this paper, thin films of SnSe and SnSe2 eutectic alloy have been prepared and their optical absorptance data have been evaluated and studied as functions of the film thickness and deposition temperature.
Journal ArticleDOI
Structural, optical, electrical and photo-electrochemical studies on indium doped Cd0.6Hg0.4Se thin films
TL;DR: In this article, the donor atoms were found to dissolve substitutionally in the lattice of Cd 0.6 Hg 0.4 Se up to a certain range of doping concentration.
Journal ArticleDOI
Thickness dependence of electrical resistivity and activation energy in AgSbTe2 thin films
D. Lakshminarayana,R. R. Desai +1 more
TL;DR: In this article, thin films of AgSbTe2 with different thicknesses were prepared by thermal evaporation on glass substrates held at room temperature and the films were all found to be semiconducting in nature.
References
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Journal ArticleDOI
Barrier Theory of the Photoconductivity of Lead Sulfide
TL;DR: In this paper, the barrier theory of the infrared photoconductivity of PbS films is discussed, according to which the high resistance of the films arises from $n √ √ n √ ϵ barrier at the surfaces between the crystallites forming the films, the barriers being formed in the oxidizing process used in preparing the films.
Journal ArticleDOI
Thermoelectric Properties of Ag2Te
P. F. Taylor,C. Wood +1 more
TL;DR: In this paper, the Seebeck coefficient α, electrical conductivity σ, and thermal conductivity K data are given for a number of Ag2Te specimens measured at room temperature, and the maximum value observed for the figure of merit α2σ/K was 1.3×10−3°C−1.
Journal ArticleDOI
Degeneracy in Ag 2 Te
C. Wood,V. Harrap,W. M. Kane +2 more
TL;DR: In this paper, the Hall coefficient, resistivity, and Seebeck coefficient of $n$-and $p$-type specimens of Ag2Te have been measured over the temperature range from 55 to 300.