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Semiconducting II-VI, IV-VI, and V-VI Compounds
21 Jan 2014-
About: The article was published on 2014-01-21 and is currently open access. It has received 146 citations till now.
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TL;DR: In this article, the inherent relationship between the structural characteristics and the thermoelectric performance of tin selenide (SnSe) is discussed, including the thermodynamics, crystal structures, and electronic structures.
389 citations
TL;DR: This review looks beyond MAPI to other ns2 solar absorbers, with the aim of identifying those materials likely to achieve high efficiencies, and discusses the ideal properties essential to produce highly efficient solar cells.
358 citations
TL;DR: In this paper, the effects of thermal fluctuations, stacking faults, surface reconstructions, and bond compressions on powder patterns of CdSe clusters using the Debye formula were analyzed.
Abstract: X‐ray powder patterns obtained from three different types of 35–40 A CdSe nanoclusters are analyzed. We simulate the effects of thermal fluctuations, stacking faults, surface reconstructions, and bond compressions on powder patterns of CdSe clusters using the Debye formula. We find that the spectra of capped and annealed CdSe particles grown in inverse micelles are best fit by a mixture of crystalline structures intermediate between zinc‐blende and wurtzite. We describe a new preparation for CdSe clusters, the structure of which appears to be well‐defined wurtzite with, on average, less than one stacking fault per cluster. Thermal effects are found to be important and to mask the subtle effects of likely surface and core reconstructions.
269 citations
TL;DR: In this article, SnSe, SnSe2, and Sn2Se3 alloys have been studied to explore their suitability as new phase change alloys for electronic memory applications and the temperature dependence of the structural and electrical properties of these alloys has been determined and compared with that of GeTe.
Abstract: SnSe, SnSe2, and Sn2Se3 alloys have been studied to explore their suitability as new phase change alloys for electronic memory applications. The temperature dependence of the structural and electrical properties of these alloys has been determined and compared with that of GeTe. A large electrical resistance contrast of more than five orders of magnitude is achieved for SnSe2 and Sn2Se3 alloys upon crystallization. X-ray diffraction measurements show that the transition in sheet resistance is accompanied by crystallization. The activation energy for crystallization of SnSe, SnSe2, and Sn2Se3 has been determined. The microstructure of these alloys has been investigated by atomic force microscopy measurements. X-ray reflection measurements reveal density increases of 5.0%, 17.0%, and 9.1% upon crystallization for the different alloys.
168 citations
TL;DR: In this article, the energy of formation of antisite defects in Sb 2− x In x Te 3 crystals has been determined for x = 0.0-0.4, these values lying in the range 0.35 -0.44 eV.
166 citations