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Patent

Semiconductor device method for producing the same and liquid crystal display including the same

TL;DR: In this article, a liquid crystal display device including a display section including a liquid-crystal layer, pixel electrodes located in a matrix on one of the pair of substrates, a plurality of first thin film transistors respectively connected to the plurality of pixel electrodes, and a peripheral driving circuit located for driving the display section, the peripheral drive circuit being located on the substrate on which the first thin-film transistors are located and having a second thin film transistor.
Abstract: A liquid crystal display device including: a display section including a liquid crystal layer; a pair of substrates interposing the liquid crystal layer; a plurality of pixel electrodes located in a matrix on one of the pair of substrates; a plurality of first thin film transistors respectively connected to the plurality of pixel electrodes; and a peripheral driving circuit located for driving the display section, the peripheral driving circuit being located on the substrate on which the first thin film transistors are located and having a second thin film transistor. Each of the first thin film transistors includes a first channel layer formed of a first crystalline silicon layer, and the second thin film transistor includes a second channel layer formed of a second crystalline silicon layer having a higher mobility than the mobility of the first crystalline silicon layer. The second crystalline silicon layer includes a catalytic element for promoting crystallization.
Citations
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Patent
01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

1,501 citations

Patent
17 Jan 2006
TL;DR: In this article, the authors propose a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

1,043 citations

Patent
08 Jan 2003
TL;DR: In this article, the surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring, and a terminal is similarly plated in order to make the resistance reduction.
Abstract: There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.

806 citations

Patent
08 Jan 2003
TL;DR: In this paper, an active matrix display (AMD) with pixel electrodes, gate wirings and source wires is proposed, in which pixel electrodes are arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the amount of steps.
Abstract: An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

432 citations

Patent
13 Feb 2001
TL;DR: In this article, an electro-optical device having a plurality of pixels, including a majority of EL elements, provides a gray-scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period, and a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one-frame period.
Abstract: An electro-optical device having a plurality of pixels including a plurality of EL elements, wherein the electro-optical device provides a gray scale display by controlling a period of time at which the plurality of the EL elements emit light in one frame period; the plurality of the EL elements have a first electrode and a second electrode; the first electrode is held at a constant potential; and a potential of the second electrode changes in such a manner that a polarity of an EL driving voltage, which is a difference between the potentials applied to the first and second electrodes, is inverted for each one frame period.

370 citations

References
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Patent
10 Jun 1994
TL;DR: In this article, an impurity is injected into a polycrystalline Si film 45, and the impurity ions are diffused to an Si substrate 11 to form diffusion layers 26, 32.
Abstract: PURPOSE:To manufacture a semiconductor device with a small junction-leakage current and a large current-driving capability. CONSTITUTION:In the state wherein a tungsten polyside film 17 of the gate electrode of a semiconductor device is covered with an SiO2 film, an impurity is injected into a polycrystalline Si film 45, and the impurity is diffused to an Si substrate 11 to form diffusion layers 26, 32. Thereafter, the polycrystalline Si film 45 is covered with a resist 46 to remove the SiO2 film, and then, impurity ions are implanted into the tungsten polyside film 17. Since a formation of the diffusion layers 26, 32 and the introduction of the impurity into the gate electrode are performed separately from each other, the condition of the heat treatment of the introduced impurity can be set independently of others. Therefore, the diffusion layers 26, 32 having favorable junction characteristics can be formed, and the lowering of the concentration of the impurity of the gate electrode is prevented, and further, the decrease of the gate capacity of the semiconductor device and the increase of its threshold voltage can be prevented.

278 citations

Patent
14 Jun 1994
TL;DR: In this article, an amorphous silicon film is formed on the nickel film and heated to crystallize it, which is irradiated with infrared light to anneal it.
Abstract: Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline silicon film having excellent crystailinity is obtained. TFTs are built, using this crystalline silicon film.

176 citations

Patent
08 Mar 1994
TL;DR: In this article, a second layer containing at least one catalytic element is formed as to be in intimate contact with the amorphous silicon film, or the catalytic elements is introduced into the polysilicon film.
Abstract: Method of fabricating a semiconductor circuit is initiated with formation of an amorphous silicon film. Then, a second layer containing at least one catalytic element is so formed as to be in intimate contact with the amorphous silicon film, or the catalytic element is introduced into the amorphous silicon film. This amorphous silicon film is selectively irradiated with laser light or other equivalent intense light to crystallize the amorphous silicon film.

166 citations

Patent
25 May 1994
TL;DR: In this paper, the vertical growth and the lateral growth have a difference in the degree of crystal orientation and the off-current and its variation can be reduced in the latter regions.
Abstract: Thin-film transistors (TFTs) of peripheral logic circuits and TFTs of an active matrix circuit (pixel circuit) are formed on a single substrate by using a crystalline silicon film. The crystalline silicon film is obtained by introducing a catalyst element, such as nickel, for accelerating crystallization into an amorphous silicon film and heating it. In doing so, the catalyst element is introduced into regions for the peripheral logic circuits in a nonselective manner, and is selectively introduced into regions for the active matrix circuit. As a result, vertical crystal growth and lateral crystal growth are effected in the former regions and the latter regions, respectively. Particularly in the latter regions, the off-current and its variation can be reduced. The vertical growth and the lateral growth have a difference in the degree of crystal orientation. In general, the vertical growth does not provide so high of a degree of crystal orientation in which orientation in the (111) plane with respect to the substrate surface is dominate to a small extent. In contrast, remarkable orientation is found in the lateral growth. For example, the ratio of a reflection intensity of the (111) plane to the sum of reflection intensities of the (111), (220) and (311) planes can amount to more than 80 or 90%.

154 citations

Patent
08 Mar 1994
TL;DR: In this paper, the amorphous silicon film is thermally annealed to crystallize it, and the surface of the obtained crystalline silicon film was etched to a depth of 20 to 200Å, thus producing a clean surface.
Abstract: Method of fabricating a semiconductor device, such as a thin-film transistor, having improved characteristics and improved reliability. The method is initiated with formation of a thin amorphous silicon film on a substrate. A metallization layer containing at least one of nickel, iron, cobalt, and platinum is selectively formed on or under the amorphous silicon film so as to be in intimate contact with the silicon film, or these metal elements are added to the amorphous silicon film. The amorphous silicon film is thermally annealed to crystallize it. The surface of the obtained crystalline silicon film is etched to a depth of 20 to 200Å, thus producing a clean surface. An insulating film is formed on the clean surface by CVD or physical vapor deposition. Gate electrodes are formed on the insulating film.

135 citations