Semiconductor Material and Device Characterization, 3rd Edition
Citations
661 citations
Cites background from "Semiconductor Material and Device C..."
...Pd, and Au show qualitatively similar characteristics to those observed with the tungsten probe; that is, their reverse bias currents are near the same values as their respective forward bias currents (contrary to what would be expected from their predicted Schottky barrier heights, for Au and Pd in particular).(40) In contrast, Cr and TiN exhibit notably different behavior....
[...]
588 citations
266 citations
Cites background from "Semiconductor Material and Device C..."
..., as transport layers.[224] When the film thickness t is unknown, a sheet resistance Rs = ρ/t, in units Ω sq−1, is reported....
[...]
221 citations
Cites methods from "Semiconductor Material and Device C..."
...the point of maximum transconductance, gm) [1,4,6,80,81,87]....
[...]
...The Linear Extrapolation method can be used in the saturation region, using the I D VG characteristics [1,6] as illustrated in Fig....
[...]
...The following methods will be examined: (1) Constant Current (CC) method, which defines VT as the gate voltage corresponding to a certain predefined practical constant drain current [1,2,4,6,54,64,71,79]; (2) Match-Point (MP) method, which defines VT as the gate voltage at a pre-established deviation percentage of the drain current from its extrapolated weak inversion conduction behavior [39]; (3) Linear Extrapolation (LE) method, which defines VT as the gate voltage axis intercept of the tangent of the ID–VG characteristics at its maximum first derivative (slope) point, [1,2,4,6,80,81,87]; (4) Second Derivative (SD) method, which defines VT as the gate voltage at the maximum of the second derivative of the ID–VG characteristics [36]; (5) Third-derivative (TD) method which defines VT as the gate voltage at the maximum of the third derivative of the ID–VG characteristics, in contradiction to the SD method [63]; (6) Current-to-square-root-of-the-Transconductance Ratio (CsrTR) method, which defines VT as the gate voltage axis intercept of the ratio of the drain current to the square root of the transconductance [37,38,46,70,77]; (7) Transition method which defines VT at the transition between weak and strong conduction behaviors [56], inspired on the integral difference function D [88,89]; (8) Normalized Mutual Integral Difference Method (NMID), also an integration-based method following the ideas of the previous one [65]; (9) Normalized Reciprocal H function (NRH) method, which is an improvement to the NMID method; and (10) Transconductance-to-Current-Ratio (TCR) [31,45,68,72,73], and its integration-based counterpart the Reciprocal H function (RH) method [69]....
[...]
212 citations