Semiconductor wafer bonding
Citations
562 citations
Cites background from "Semiconductor wafer bonding"
...Two crystal structures are brought closely together forming atomic bonds at the interface [10,11]....
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478 citations
Cites background or methods from "Semiconductor wafer bonding"
...The imaging methods are nondestructive and can be used as in-process monitors, while the cross-sectional analysis and bondstrength measurements are destructive and require control wafers for characterization....
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...In this section, we will discuss the methods as applied to silicon direct bonding, but many of these same techniques can be applied to other methods of bonding....
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...The emphasis will be placed on silicon direct bonding....
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...It has been shown that when wafers are contacted in air, and subsequently annealed at high temperature, the oxygen in the cavity can react with the silicon surface and create a partial vacuum [34]....
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...In the following sections, we will begin with a description of the silicon direct bonding process, discuss characterization methods for the silicon bond that generalize to all bonding methods, and investigate bonding methods for other types of substrates....
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456 citations
References
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"Semiconductor wafer bonding" refers background or methods in this paper
...From then on, silicon wafer bonding and the associated thinning techniques were further investigated and improved for the fabrication of SOI wafers, as a supposedly less expensive and better quality alternative to the SIMOX (Separation by IMplantation of OXygen) approach, which involves high-dose and high-energy oxygen implantation (16, 17)....
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...The subject of SOI devices has been treated extensively elsewhere (16, 17) and is not specifically discussed in this review....
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1,106 citations
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