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Journal ArticleDOI

Series operation of avalanche transistors

T.H. O'Dell
- 06 Mar 1969 - 
- Vol. 5, Iss: 5, pp 94-95
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TLDR
In this paper, a switch made up of four avalanche transistors is described, which produces 80V across a 50Ω load in less than 1 ns, and the jitter with respect to the trigger pulse is less than 30ps.
Abstract
A switch made up from four avalanche transistors is described It produces 80V across a 50Ω load in less than 1ns, and the jitter with respect to the trigger pulse is less than 30ps.

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Citations
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Journal ArticleDOI

Avalanche Transistor Pulser for Fast-Gated Operation of Microchannel Plate Image-Intensifiers

TL;DR: In this article, a resistance-capacitance network has been developed which places the MCPI2 output phosphor at ground, provides programmable gains in "f-stop" steps, and minimizes voltage transients.
Journal ArticleDOI

Development of a High Peak Voltage Picoseconds Avalanche Transistor Based Marx Bank Circuit

TL;DR: In this article, the detailed process of analyzing and designing a compact Marx generator using avalanche transistors is described, and the experimental observations on the mechanism of operation of the MBCs are reported.
Journal ArticleDOI

An economic and compact image-converter camera

TL;DR: In this paper, an image-converter streak camera is described which utilises an English Electric P856/20 electrostatically focused shutter tube operated in a normally cut-off mode.
References
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Journal ArticleDOI

Nanosecond Pulse Transformers

TL;DR: In this article, the authors proposed a transmission-line transformer for impedance matching, pulse inverting, and dc isolation within the range of about 30 to 300 ohms with rise times of less than 0.5 × 10-9 seconds, and magnetizing time constants in excess of 5 × 10 -7 seconds.
Journal ArticleDOI

A fast risetime avalanche transistor pulse generator for driving injection lasers

TL;DR: In this article, a circuit was described in which avalanche transistors in parallel generate high-current, fast ristime pulses suitable for driving injection lasers and an adjustable biasing technique was used to make possible the simultaneous avalanche of unmatched transistors.
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