Journal ArticleDOI
SHI induced silicide formation and surface morphology at Co/Si system
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TLDR
In this paper, ion beam induced modifications at Co/Si interface using 120 MeV Au-ion irradiation has been studied at ion fluences in the range of 10 12 to 10 14 ǫ 2 by secondary ion mass spectroscopy (SIMS) technique and calculated mixing efficiency at the interface.About:
This article is published in Applied Surface Science.The article was published on 2006-11-30. It has received 4 citations till now. The article focuses on the topics: Ion beam mixing & Ion beam deposition.read more
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Journal ArticleDOI
Ion beam induced surface and interface engineering
I.P. Jain,Garima Agarwal +1 more
TL;DR: A review of ion beam modifications at various solids, thin films, and multilayered systems covering wider energy ranges including the older basic concepts is given in this paper. But the results reveal that the ion-solid interaction physics provides a unique way for controlling the produced defects of the desired type at a desired location.
Journal ArticleDOI
Ion beam induced mixing at Co/Si interface
TL;DR: In this article, the authors investigated ion beam mixing at Co/Si interface induced by electronic excitation using 120 MeV Au +9 ion irradiation at different fluences, varying from 10 12 to 10 14 ions/cm 2.
Journal ArticleDOI
Swift heavy ion induced effects at Mo/Si interface and silicide formation
Garima Agarwal,Vaibhav Kulshrestha,R.K. Jain,D. Kabiraj,Indra Sulania,Pawan K. Kulriya,I.P. Jain +6 more
TL;DR: In this paper, a fast heavy ion (SHI) induced modification at metal/Si interfaces has emerged as an interesting field of research due to its large applications, and the authors investigated SHI-induced mixed molybdenum silicide film with ion fluences.
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120 MeV Ag ion irradiation induced intermixing, grain fragmentation in HfO2/GaOx thin films and consequent effects on the electrical properties of HfO2/GaOx/Si-based MOS capacitors
TL;DR: On p-type Silicon (100) substrates GaOx (150nm) and HfO2 (30nm) thin films have been synthesized using the RF magnetron sputtering method as discussed by the authors.
References
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Journal ArticleDOI
Thermodynamic and fractal geometric aspects of ion-solid interactions
TL;DR: In this article, a fractal geometry approach to spike formation is presented, based on an idealized collision cascade constructed from the inverse power potential V(r) √ r−1/m (0).
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Coulomb explosions in a metallic glass due to the passage of fast heavy ions
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Ion beam mixing of ZnO/SiO2 and Sb/Ni/Si interfaces under swift heavy ion irradiation
Saskia Kraft,B. Schattat,Wolfgang Bolse,Siegfried Klaumünzer,F. Harbsmeier,Agnieszka Kulinska,Anton Löffl +6 more
TL;DR: In this article, irradiation induced interface mixing in ZnO/SiO2 (α-quartz) and Sb/Ni/Si thin layer systems under heavy ion irradiation in the electronic stopping power regime was investigated.
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Ion Beam Mixing Effects Induced in the Latent Tracks of Swift Heavy Ions in a Fe/Si Multilayer
TL;DR: In this paper, a mixing effect was observed in an Fe/Si multilayer irradiated by 650 MeV uranium ions, where the magnetic properties were drastically modified from the previous crystalline ferromagnetic state.
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Salicides: materials, scaling and manufacturability issues for future integrated circuits
TL;DR: In this paper, an overview of the development of advanced salicide processes at Texas Instruments, addressing both Ti and Co salicides, is presented, with manufacturing and high yield capability demonstrated for sub 0.25 μm CMOS technologies.