Short-Channel Effects in Tunnel FETs
Citations
57 citations
51 citations
Cites background from "Short-Channel Effects in Tunnel FET..."
...In [2] and [17]–[19], it has also been studied that the SCEs can affect device performance in terms of device electrical characteristics....
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50 citations
Cites methods from "Short-Channel Effects in Tunnel FET..."
...Different approaches have been used in the literature to calculate the tunneling probability PT , by using (14) [37] or by using the Wentzel–Kramers–Brillouin approximation [25], [38]–[40]....
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44 citations
Cites background from "Short-Channel Effects in Tunnel FET..."
...Unfortunately, previous examinations have shown that 2D effects play a key role in nanoscale devices [15]....
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44 citations
Cites background or methods from "Short-Channel Effects in Tunnel FET..."
...Here, λ is the scale length given by the device thickness [2]....
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...To generate the Ids–Vds characteristics in the linear region, a de-bias model is invoked to account for the retardation of gate effect by inversion charge, namely, through q(Vgs − Qinv/Cox) = V0 − (V1 − ) [2]....
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...When the channel length is scaled to 10 nm and shorter, however, both the off-current (IOFF) and the subthreshold swing (SS) go up sharply because of source to drain tunneling [2]....
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References
1,389 citations
"Short-Channel Effects in Tunnel FET..." refers background in this paper
...INTRODUCTION TUNNEL FETs (TFETs) have attracted considerable interest for low-power applications because of their promise to deliver steep subthreshold swing, and thus enable an aggressive scaling of supply voltage [1]....
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1,172 citations
"Short-Channel Effects in Tunnel FET..." refers methods in this paper
...The current for a 1-D ballistic TFET is given by the Landauer equation [19]...
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361 citations
"Short-Channel Effects in Tunnel FET..." refers methods in this paper
...In MOSFETs, the first-order effect of SCE is to cause a lower threshold voltage, which shifts the entire Ids–Vgs curve negatively in a parallel fashion that both the OFF- and ON-currents go up [17]....
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...For given Vgs andVds, Qinv can be calculated from a continuous, analytic solution of Poisson’s equation with mobile charge for DG MOSFETs [20]...
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...There is a distinctive difference between the SCE of TFETs and that of MOSFETs....
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...Similar to short-channel MOSFETs, the finite-output conductance appears in the saturation region of the 10-nm TFET....
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...For given Vgs andVds, Qinv can be calculated from a continuous, analytic solution of Poisson’s equation with mobile charge for DG MOSFETs [20] Qinv = 4kT εs qts β tan β (10) where the intermediary parameter β is solved from q(Vgs − Vds − d1) 2kT − ln [ 2 ts √ 2εskT q2 Nc ] = ln β − ln [cosβ] + 2εs ti εi ts β tan β (11) where Nc is the effective density of states of the conduction band....
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355 citations
355 citations
"Short-Channel Effects in Tunnel FET..." refers methods in this paper
...For nanowire (NW) TFETs [16], [18], the 2-D solution consists of similar sinh terms in the channel direction as in (1), but with the sine factor replaced by zeroth-order Bessel function in the radial direction....
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...In TFETs, the SCE mainly degrades the slope of Ids–Vgs near Vgs = 0; hence, the OFF-current goes up sharply, while the ON-current at large Vgs is hardly affected....
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...For long channel TFETs, the current is not sensitive to L....
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...There is a distinctive difference between the SCE of TFETs and that of MOSFETs....
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...A similar three-term potential has been applied to NW TFETs [23], but with a scale length based on the parabolic potential model, which does not satisfy the 2-...
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