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Journal ArticleDOI

Shot noise in mesoscopic conductors

01 Sep 2000-Physics Reports (North-Holland)-Vol. 336, Iss: 1, pp 1-166
TL;DR: Theoretical and experimental work concerned with dynamic fluctuations has developed into a very active and fascinating subfield of mesoscopic physics as discussed by the authors, which can be used to obtain information on a system which is not available through conductance measurements.
About: This article is published in Physics Reports.The article was published on 2000-09-01 and is currently open access. It has received 2086 citations till now. The article focuses on the topics: Shot noise & Quantum noise.
Citations
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Journal ArticleDOI
TL;DR: The field of cavity optomechanics explores the interaction between electromagnetic radiation and nano-or micromechanical motion as mentioned in this paper, which explores the interactions between optical cavities and mechanical resonators.
Abstract: We review the field of cavity optomechanics, which explores the interaction between electromagnetic radiation and nano- or micromechanical motion This review covers the basics of optical cavities and mechanical resonators, their mutual optomechanical interaction mediated by the radiation pressure force, the large variety of experimental systems which exhibit this interaction, optical measurements of mechanical motion, dynamical backaction amplification and cooling, nonlinear dynamics, multimode optomechanics, and proposals for future cavity quantum optomechanics experiments In addition, we describe the perspectives for fundamental quantum physics and for possible applications of optomechanical devices

4,031 citations

Journal ArticleDOI
TL;DR: In this article, the authors discuss the results in the context of related developments, including Andreev reflection, shot noise, conductance quantization and dynamical Coulomb blockade.

1,346 citations

Journal ArticleDOI
TL;DR: Fluctuation theorems (FTs) as discussed by the authors describe some universal properties of nonequilibrium fluctuations and are derived from a quantum perspective by introducing a two-point measurement on the system.
Abstract: Fluctuation theorems (FTs), which describe some universal properties of nonequilibrium fluctuations, are examined from a quantum perspective and derived by introducing a two-point measurement on the system. FTs for closed and open systems driven out of equilibrium by an external time-dependent force, and for open systems maintained in a nonequilibrium steady state by nonequilibrium boundary conditions, are derived from a unified approach. Applications to fermion and boson transport in quantum junctions are discussed. Quantum master equations and Green's functions techniques for computing the energy and particle statistics are presented.

1,203 citations


Cites background from "Shot noise in mesoscopic conductors..."

  • ...which is the Landauer-Buttiker expression for the average current through a tunneling junction with transmission coefficient T (ω) [16]....

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Journal ArticleDOI
TL;DR: In this paper, a review of the thermal properties of mesoscopic structures is presented based on the concept of electron energy distribution, and, in particular, on controlling and probing it, and an immediate application of solidstate refrigeration and thermometry is in ultrasensitive radiation detection, which is discussed in depth.
Abstract: This review presents an overview of the thermal properties of mesoscopic structures. The discussion is based on the concept of electron energy distribution, and, in particular, on controlling and probing it. The temperature of an electron gas is determined by this distribution: refrigeration is equivalent to narrowing it, and thermometry is probing its convolution with a function characterizing the measuring device. Temperature exists, strictly speaking, only in quasiequilibrium in which the distribution follows the Fermi-Dirac form. Interesting nonequilibrium deviations can occur due to slow relaxation rates of the electrons, e.g., among themselves or with lattice phonons. Observation and applications of nonequilibrium phenomena are also discussed. The focus in this paper is at low temperatures, primarily below $4\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, where physical phenomena on mesoscopic scales and hybrid combinations of various types of materials, e.g., superconductors, normal metals, insulators, and doped semiconductors, open up a rich variety of device concepts. This review starts with an introduction to theoretical concepts and experimental results on thermal properties of mesoscopic structures. Then thermometry and refrigeration are examined with an emphasis on experiments. An immediate application of solid-state refrigeration and thermometry is in ultrasensitive radiation detection, which is discussed in depth. This review concludes with a summary of pertinent fabrication methods of presented devices.

984 citations


Cites background from "Shot noise in mesoscopic conductors..."

  • ...33 When the resistance of a point contact dominates that of the wire, the noise power can be expressed through Blanter and Büttiker, 2000 SNN = 4e2 h n dE Tn fL 1 − fL + fR 1 − fR + Tn 1 − Tn fL − fR 2 for a normal-metal contact and de Jong and Beenakker, 1994 SNS = 4e2 h n dE Tn2 2 − Tn 22fL E 1 −…...

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  • ...Noise current or voltage of a resistor resistance R has been known to yield absolute temperature since the 1920s Johnson, 1928; Nyquist, 1928; Blanter and Büttiker, 2000 ....

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  • ...Often one can express the zero-frequency current noise in terms of the local distribution function Blanter and Büttiker, 2000 ....

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  • ...In the opposite limit, at eV kBT, the dominating noise, e.g., in tunnel junctions, is shot noise Schottky, 1918; Blanter and Büttiker, 2000 , whose current spectral density is given asymptotically by SI=F2e I ....

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Journal ArticleDOI
TL;DR: This Review covers the major advances with the most general applicability and emphasizes new insights into the development of efficient platform methodologies for building reliable molecular electronic devices with desired functionalities through the combination of programmed bottom-up self-assembly and sophisticated top-down device fabrication.
Abstract: Creating functional electrical circuits using individual or ensemble molecules, often termed as “molecular-scale electronics”, not only meets the increasing technical demands of the miniaturization of traditional Si-based electronic devices, but also provides an ideal window of exploring the intrinsic properties of materials at the molecular level. This Review covers the major advances with the most general applicability and emphasizes new insights into the development of efficient platform methodologies for building reliable molecular electronic devices with desired functionalities through the combination of programmed bottom-up self-assembly and sophisticated top-down device fabrication. First, we summarize a number of different approaches of forming molecular-scale junctions and discuss various experimental techniques for examining these nanoscale circuits in details. We then give a full introduction of characterization techniques and theoretical simulations for molecular electronics. Third, we highlig...

949 citations

References
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Book
01 Jan 1981
TL;DR: In this article, the authors introduce the Fokker-planck equation, the Langevin approach, and the diffusion type of the master equation, as well as the statistics of jump events.
Abstract: Preface to the first edition. Preface to the second edition. Abbreviated references. I. Stochastic variables. II. Random events. III. Stochastic processes. IV. Markov processes. V. The master equation. VI. One-step processes. VII. Chemical reactions. VIII. The Fokker-Planck equation. IX. The Langevin approach. X. The expansion of the master equation. XI. The diffusion type. XII. First-passage problems. XIII. Unstable systems. XIV. Fluctuations in continuous systems. XV. The statistics of jump events. XVI. Stochastic differential equations. XVII. Stochastic behavior of quantum systems.

7,858 citations

01 Jan 1992
Abstract: Preface to the first edition. Preface to the second edition. Abbreviated references. I. Stochastic variables. II. Random events. III. Stochastic processes. IV. Markov processes. V. The master equation. VI. One-step processes. VII. Chemical reactions. VIII. The Fokker-Planck equation. IX. The Langevin approach. X. The expansion of the master equation. XI. The diffusion type. XII. First-passage problems. XIII. Unstable systems. XIV. Fluctuations in continuous systems. XV. The statistics of jump events. XVI. Stochastic differential equations. XVII. Stochastic behavior of quantum systems.

6,887 citations

01 Jan 1997

4,469 citations

Journal ArticleDOI
TL;DR: In this paper, the Bogoliubov equations were used to model the transmission and reflection of particles at the tunnel junction of normal-superconducting micro-constriction contacts, and a simple theory for the $I\ensuremath{-}V$ curves of normal superconducting contacts was proposed to describe the crossover from metallic to tunnel junction behavior.
Abstract: We propose a simple theory for the $I\ensuremath{-}V$ curves of normal-superconducting microconstriction contacts which describes the crossover from metallic to tunnel junction behavior. The detailed calculations are performed within a generalized semiconductor model, with the use of the Bogoliubov equations to treat the transmission and reflection of particles at the $N\ensuremath{-}S$ interface. By including a barrier of arbitrary strength at the interface, we have computed a family of $I\ensuremath{-}V$ curves ranging from the tunnel junction to the metallic limit. Excess current, generated by Andreev reflection, is found to vary smoothly from $\frac{4\ensuremath{\Delta}}{3e{R}_{N}}$ in the metallic case to zero for the tunnel junction. Charge-imbalance generation, previously calculated only for tunnel barriers, has been recalculated for an arbitrary barrier strength, and detailed insight into the conversion of normal current to supercurrent at the interface is obtained. We emphasize that the calculated differential conductance offers a particularly direct experimental test of the predictions of the model.

2,772 citations

Journal ArticleDOI
TL;DR: The first expenmental study of the resistance of ballistic pomt contacts m the 2DEG of high-mobihty GaAs-AlGaAs heterostructures is reported.
Abstract: As a result of the high mobihty attamable in the twodimensional electron gas (2DEG) in GaAs-AlGaAs heterostructures it is now becoming feasible to study ballistic transport in small devices '"6 In metals ideal tools for such studies are constnctions havng a width W and length L much smaller than the mean free path le These are known as Sharvin pomt contacts 7 Because of the ballistic transport through these constnctions, the resistance is determmed by the pomt-contact geometry only Point contacts have been used extensively for the study of elastic and melastic electron scattermg With use of biased pomt contacts, electrons can be mjected mto metals at energies above the Fermi level This allows the study of the energy dependence of the scattermg mechamsms 8 With the use of a geometry containmg two pomt contacts, with Separation smaller than le, electrons mjected by a pomt contact can be focused mto the other contact, by the application of a magnetic field This technique (transverse electron focusmg) has been applied to the detailed study of Fermi surfaces 9 In this Letter we report the first expenmental study of the resistance of ballistic pomt contacts m the 2DEG of high-mobihty GaAs-AlGaAs heterostructures The smgle-pomt contacts discussed m this paper are part of a double-pomt-contact device The results of transverse electron focusmg m these devices will be published elsewhere '° The pomt contacts are dehned by electrostatic depletion of the 2DEG underneath a gate This method, which has been used by several authors for the study of l D conduction,'1 offers the possibility to control the width of the pomt contact by the gate voltage Control of the width is not feasible in metal pomt contacts

2,508 citations