Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
Citations
721 citations
297 citations
Cites background from "Si, SiGe Nanowire Devices by Top–Do..."
...(∼70 mV/V) is achieved as a result of excellent gate control by GAA structure [4], [11], and [12]....
[...]
294 citations
175 citations
160 citations
References
9,647 citations
8,259 citations
"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper
...vapor–liquid–solid chemistry [11], typically with the help of a...
[...]
6,077 citations
5,841 citations
"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper
...sensing of chemical/biochemical species [9]....
[...]
...Electrical sensing through change in conductance (or resistance) of Si-NW has been demonstrated successfully for metal ions [9], [10], [62], DNA [63]–[68], proteins [69]–[71], virus [72], and cells [73]....
[...]
2,396 citations
"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper
...Electrical sensing through change in conductance (or resistance) of Si-NW has been demonstrated successfully for metal ions [9], [10], [62], DNA [63]–[68], proteins [69]–[71], virus [72], and cells [73]....
[...]