Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
TL;DR: The current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories are reviewed and the challenges and opportunities are outlined.
Abstract: Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.
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TL;DR: Gate-AllAround silicon nanowire with 80nm diameter field effect transistor based CMOS based device utilizing the 45-nm technology provides better and low drain induced barrier lowering (DIBL) and competent Subthresold slope ~95mV/V.
Abstract: This paper explains the performance analysis of Gate-AllAround silicon nanowire with 80nm diameter field effect transistor based CMOS based device utilizing the 45-nm technology. Simulation and analysis of nanowire (NW) CMOS inverter show that there is the reduction of 70% in leakage power and delay minimization of 25% as compared with 180 nm channel length.Gate-All-Aorund (GAA) configuration provides better and low drain induced barrier lowering (DIBL) ~63.3mV/V and competent Subthresold slope ~95mV/V. GAA achieved the better voltage gain of ~10.1 V/V .Static noise margin improved with 400mv. It provides high on drive current ~6mA this is validated that the threshold voltage of GAA field effect transistor.
13 citations
Cites background from "Si, SiGe Nanowire Devices by Top–Do..."
...It provides high on drive current ~6mA this is validated that the threshold voltage of GAA field effect transistor....
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TL;DR: In this article, a 2D simulator for the III-V GAAFET based on self-consistent solution of Schrodinger-Poisson equation is proposed, which reveals that gate dielectric constant i¾? and oxide thickness do not affect threshold voltage significantly at lower channel doping.
Abstract: High-i¾? gate-all-around structure counters the Short Channel Effect SCEs mostly providing excellent off-state performance, whereas high mobility III-V channel ensures better on-state performance, rendering III-V nanowire GAAFET a potential candidate for replacing the current FinFETs in microchips. In this paper, a 2D simulator for the III-V GAAFET based on self-consistent solution of Schrodinger-Poisson equation is proposed. Using this simulator, capacitance-voltage profile and threshold voltage are characterized, which reveal that gate dielectric constant i¾? and oxide thickness do not affect threshold voltage significantly at lower channel doping. Moreover, change in alloy composition of InxGa1-xAs, channel doping, and cross-sectional area has trivial effects on the inversion capacitance although threshold voltage can be shifted by the former two. Although, channel material also affects the threshold voltage, most sharp change in threshold voltage is observed with change in fin width of the channel 0.005V/nm for above 10nm fin width and 0.064V/nm for sub-10nm fin width. Simulation suggests that for lower channel doping below 1023m-3, fin width variation affects the threshold voltage most. Whereas when the doping is higher than 1023m-3, both the thickness and dielectric constant of the oxide material have strong effects on threshold voltage 0.05V/nm oxide thickness and 0.01V/per unit change in i¾?. Copyright © 2014 John Wiley & Sons, Ltd.
13 citations
TL;DR: In this article, the authors present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition, and point out the main differences with respect to the case of pure Si and Ge wires.
Abstract: One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility to modulate and engine their electronic properties in an easy way, in order to obtain a material with the desired electronic features. Diameter and composition constitute two crucial ways for the modification of the band gap and of the band structure of SiGe NWs. Within the framework of density functional theory we present results of ab initio calculations regarding the band structure dependence of SiGe NWs on diameter and composition. We point out the main differences with respect to the case of pure Si and Ge wires and we discuss the particular features of SiGe NWs that are useful for future technological applications.
12 citations
TL;DR: In this article, the combination of solid-state dewetting process and metal-assisted wet chemical etching allowed for fabrication of Si nanocolumns on large areas in a relatively simple way.
Abstract: In this work, we reported on the development of lithography-free technology for the fabrication of nanopatterned Si substrates. The combination of two phenomena, the solid-state dewetting process and metal-assisted wet chemical etching, allowed for fabrication of Si nanocolumns on large areas in a relatively simple way. The process of dewetting the thin metal layer enabled formation of nickel nanoislands, which were used as a shadow mask in the deposition of a catalytic metal pattern. Application of the two-stage dewetting process with the repetition of the metal deposition and annealing step enabled us to obtain a significant increase in the surface coverage ratio and the surface density of the nanoislands. As a catalytic metal, a gold layer was applied in the metal-assisted wet chemical etching process. The obtained columnar nanostructures showed a great verticality and had a high aspect ratio. In the conducted studies, the maximum etching rate (at RT) was higher than 1.2 μm min−1. The etching rate increased with increasing concentration of oxidizing (H2O2) and etching (HF) agent, with a tendency to saturate for more concentrated solutions. The etching rate was significantly higher for Si substrates with a crystallographic orientation (115) than for (111), but there was no privileged direction of etching except for the direction vertical to the substrate. With increasing layer thickness of the catalytic metal a decrease in the metal-assisted wet chemical etching process efficiency was observed. The developed technology allows for fabrication of patterned substrates with a wide range of lateral dimension of nanocolumns and their density.
12 citations
TL;DR: In this paper, the authors examined the kinetics of dry thermal oxidation of (111), (110), and (100) silicon-germanium (SiGe) thin epitaxial films and the redistribution of Ge near the oxidation interface with the aim of facilitating construction of single and multi-layered nano-structures.
Abstract: The present study examines the kinetics of dry thermal oxidation of (111), (110), and (100) silicon-germanium (SiGe) thin epitaxial films and the redistribution of Ge near the oxidation interface with the aim of facilitating construction of single and multi-layered nano-structures. By employing a series of multiple and single step oxidations, it is shown that the paramount parameter controlling the Ge content at the oxidation interface is the oxidation temperature. The oxidation temperature may be set such that the Ge content at the oxidation interface is increased, kept static, or decreased. The Ge content at the oxidation interface is modeled by considering the balance between Si diffusion in SiGe and the flux of Si into the oxide by formation of SiO2. The diffusivity of Si in SiGe under oxidation is determined for the three principal crystal orientations by combining the proposed empirical model with data from X-ray diffraction and variable angle spectroscopic ellipsometry. The orientation dependence o...
12 citations
References
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01 Jan 1998
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Abstract: The future of integrated electronics is the future of electronics itself. The advantages of integration will bring about a proliferation of electronics, pushing this science into many new areas. Integrated circuits will lead to such wonders as home computers—or at least terminals connected to a central computer—automatic controls for automobiles, and personal portable communications equipment. The electronic wristwatch needs only a display to be feasible today. But the biggest potential lies in the production of large systems. In telephone communications, integrated circuits in digital filters will separate channels on multiplex equipment. Integrated circuits will also switch telephone circuits and perform data processing. Computers will be more powerful, and will be organized in completely different ways. For example, memories built of integrated electronics may be distributed throughout the machine instead of being concentrated in a central unit. In addition, the improved reliability made possible by integrated circuits will allow the construction of larger processing units. Machines similar to those in existence today will be built at lower costs and with faster turnaround.
9,647 citations
TL;DR: A comprehensive review of 1D nanostructures can be found in this article, where the authors provide a comprehensive overview of current research activities that concentrate on one-dimensional (1D) nanostructure (wires, rods, belts and tubes).
Abstract: This article provides a comprehensive review of current research activities that concentrate on one-dimensional (1D) nanostructures—wires, rods, belts, and tubes—whose lateral dimensions fall anywhere in the range of 1 to 100 nm. We devote the most attention to 1D nanostructures that have been synthesized in relatively copious quantities using chemical methods. We begin this article with an overview of synthetic strategies that have been exploited to achieve 1D growth. We then elaborate on these approaches in the following four sections: i) anisotropic growth dictated by the crystallographic structure of a solid material; ii) anisotropic growth confined and directed by various templates; iii) anisotropic growth kinetically controlled by supersaturation or through the use of an appropriate capping reagent; and iv) new concepts not yet fully demonstrated, but with long-term potential in generating 1D nanostructures. Following is a discussion of techniques for generating various types of important heterostructured nanowires. By the end of this article, we highlight a range of unique properties (e.g., thermal, mechanical, electronic, optoelectronic, optical, nonlinear optical, and field emission) associated with different types of 1D nanostructures. We also briefly discuss a number of methods potentially useful for assembling 1D nanostructures into functional devices based on crossbar junctions, and complex architectures such as 2D and 3D periodic lattices. We conclude this review with personal perspectives on the directions towards which future research on this new class of nanostructured materials might be directed.
8,259 citations
"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper
...vapor–liquid–solid chemistry [11], typically with the help of a...
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Journal Article•
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as discussed by the authors. But the biggest potential lies in the production of large systems.
Abstract: The future of integrated electronics is the future of electronics itself. The advantages of integration will bring about a proliferation of electronics, pushing this science into many new areas. Integrated circuits will lead to such wonders as home computers—or at least terminals connected to a central computer—automatic controls for automobiles, and personal portable communications equipment. The electronic wristwatch needs only a display to be feasible today. But the biggest potential lies in the production of large systems. In telephone communications, integrated circuits in digital filters will separate channels on multiplex equipment. Integrated circuits will also switch telephone circuits and perform data processing. Computers will be more powerful, and will be organized in completely different ways. For example, memories built of integrated electronics may be distributed throughout the machine instead of being concentrated in a central unit. In addition, the improved reliability made possible by integrated circuits will allow the construction of larger processing units. Machines similar to those in existence today will be built at lower costs and with faster turnaround.
6,077 citations
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Abstract: Boron-doped silicon nanowires (SiNWs) were used to create highly sensitive, real-time electrically based sensors for biological and chemical species. Amine- and oxide-functionalized SiNWs exhibit pH-dependent conductance that was linear over a large dynamic range and could be understood in terms of the change in surface charge during protonation and deprotonation. Biotin-modified SiNWs were used to detect streptavidin down to at least a picomolar concentration range. In addition, antigen-functionalized SiNWs show reversible antibody binding and concentration-dependent detection in real time. Lastly, detection of the reversible binding of the metabolic indicator Ca2+ was demonstrated. The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
5,841 citations
"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper
...sensing of chemical/biochemical species [9]....
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...Electrical sensing through change in conductance (or resistance) of Si-NW has been demonstrated successfully for metal ions [9], [10], [62], DNA [63]–[68], proteins [69]–[71], virus [72], and cells [73]....
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TL;DR: Highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.
Abstract: We describe highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays. Protein markers were routinely detected at femtomolar concentrations with high selectivity, and simultaneous incorporation of control nanowires enabled discrimination against false positives. Nanowire arrays allowed highly selective and sensitive multiplexed detection of prostate specific antigen (PSA), PSA-a1-antichymotrypsin, carcinoembryonic antigen and mucin-1, including detection to at least 0.9 pg/ml in undiluted serum samples. In addition, nucleic acid receptors enabled real-time assays of the binding, activity and small-molecule inhibition of telomerase using unamplified extracts from as few as ten tumor cells. The capability for multiplexed real-time monitoring of protein markers and telomerase activity with high sensitivity and selectivity in clinically relevant samples opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.
2,396 citations
"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper
...Electrical sensing through change in conductance (or resistance) of Si-NW has been demonstrated successfully for metal ions [9], [10], [62], DNA [63]–[68], proteins [69]–[71], virus [72], and cells [73]....
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