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Journal ArticleDOI

Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications

TL;DR: The current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories are reviewed and the challenges and opportunities are outlined.
Abstract: Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.
Citations
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Proceedings ArticleDOI
01 Nov 2018
TL;DR: A ripple-carry 32-bit adder is uniquely designed using simulated TIGFET technology and its metrics are compared against CMOS High-Performance (HP) and CMOS Low-Voltage.
Abstract: Three-Independent-Gate Field-Effect Transistors (TIGFETs)extend the functional diversity of a single transistor by allowing a dynamic electric reconfiguration of the polarity. This property has been shown to unlock unique circuit level opportunities. In this article, a ripple-carry 32-bit adder is uniquely designed using simulated TIGFET technology and its metrics are compared against CMOS High-Performance (HP)and CMOS Low-Voltage. By adopting TIGFET's polarity control characteristic, the proposed ripple-carry adder architecture uses efficient exclusive OR and majority gates to compute complementary carry signals in parallel, leading to a 38% decrease in logic depth as compared to the standard CMOS design. Additionally, a 38% reduction in contacted gates reduces the effects coming from an interconnect-limited design. The results show that the decrease in the logic depth and the reduction in contacted gates lead to a 3.8x lower energy-delay product and a 5.6x lower area-delay product as compared with CMOS HP. The boost in performance coming from realizing arithmetic circuits with TIGFET transistors makes them a promising next-generation high-performance device technology.

11 citations

Proceedings ArticleDOI
06 Mar 2014
TL;DR: In this paper, the analog applications of different transport models applied on Gate Electrode Workfunction Engineered Silicon Nanowire MOSFETs are investigated based on the simulated results from ATLAS and DevEdit.
Abstract: The analog applications of different transport models applied on Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET is investigated based on the simulated results from ATLAS and DevEdit. Simulation results show that this device demonstrates a superior performance in terms of better I on /I off ratio in case of HDM, high output impedance in case of DDM, and EBM is efficient for depicting the behavior of sub-micron devices.

11 citations

Patent
14 Feb 2012
TL;DR: In this article, a method for forming a nanowire tunnel field effect transistor device is described, where the nanowires are connected to a first pad region and a second pad region, and the dielectric layer is removed from the core portion of the second portion to form a cavity and epitaxially growing a doped semiconductor material in the cavity.
Abstract: A method for forming a nanowire tunnel field effect transistor device includes forming a nanowire connected to a first pad region and a second pad region, the nanowire including a core portion and a dielectric layer, forming a gate structure on the dielectric layer of the nanowire, forming a first protective spacer on portions of the nanowire, implanting ions in a first portion of the exposed nanowire and the first pad region, implanting in the dielectric layer of a second portion of the exposed nanowire and the second pad region, removing the dielectric layer from the second pad region and the second portion, removing the core portion of the second portion of the exposed nanowire to form a cavity, and epitaxially growing a doped semiconductor material in the cavity to connect the exposed cross sections of the nanowire to the second pad region.

11 citations

Journal ArticleDOI
Ruijin Hu1, Haiguang Ma1, Han Yin1, Jun Xu1, Kunji Chen1, Linwei Yu1 
TL;DR: This work reports on a convenient new strategy to grow and integrate high density Si nanowire (SiNW) arrays on the parallel sidewall grooves formed by Bosch etching, via a low temperature in-plane solid-liquid-solid (IPSLS) mechanism, and shows that both the pitch and the depth of the grooves can be reliably controlled.
Abstract: Three-dimensional (3D) integration is a promising strategy to integrate more functions into a given footprint. In this work, we report on a convenient new strategy to grow and integrate high density Si nanowire (SiNW) arrays on the parallel sidewall grooves formed by Bosch etching, via a low temperature ( 107 and a hole mobility of 57 cm2 V−1 s−1, in a unique vertical side-gate configuration. These results highlight the unique potential and benefit of combining conventional Bosch processing with high precision 3D guided growth of SiNWs for constructing more complex and functional stacked channel electronics.

11 citations

Journal ArticleDOI
TL;DR: The TIGFET technology has been benchmarked against several beyond-CMOS devices and it is shown that the standby energy of the 32-bit adder decreased by two orders of magnitude compared with CMOS HP and a decrease of at least one order of magnitudeCompared withCMOS low-voltage.
Abstract: Three-independent-gate field-effect transistors (TIGFETs) are a promising next-generation device technology. Their controllable-polarity capability allows for superior design of arithmetic and sequential logic gates. In this paper, the TIGFET technology has been benchmarked against several beyond-CMOS devices. The benchmarking techniques followed a similar approach used by the Nanoelectronic Research Initiative Group. The performance of the 32-bit adder and the 32-bit arithmetic logic unit (ALU) was investigated using the advanced 15-nm technology node. The TIGFET devices were shown to achieve the best energy-delay product (EDP) compared with all other beyond-CMOS devices for the 32-bit adder and competitive EDP for the 32-bit ALU. In particular, TIGFETs have 3.83 times and 1.54 times lower EDP than CMOS high-performance (HP) for the 32-bit adder and the 32-bit ALU, respectively. In addition, TIGFETs were shown to have a similar throughput for the 32-bit ALU compared with CMOS HP. Finally, due to TIGFETs’ ultralow leakage current and unique circuit designs, our results show that the standby energy of the 32-bit adder decreased by two orders of magnitude compared with CMOS HP and a decrease of at least one order of magnitude compared with CMOS low-voltage.

11 citations

References
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Journal ArticleDOI
01 Jan 1998
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Abstract: The future of integrated electronics is the future of electronics itself. The advantages of integration will bring about a proliferation of electronics, pushing this science into many new areas. Integrated circuits will lead to such wonders as home computers—or at least terminals connected to a central computer—automatic controls for automobiles, and personal portable communications equipment. The electronic wristwatch needs only a display to be feasible today. But the biggest potential lies in the production of large systems. In telephone communications, integrated circuits in digital filters will separate channels on multiplex equipment. Integrated circuits will also switch telephone circuits and perform data processing. Computers will be more powerful, and will be organized in completely different ways. For example, memories built of integrated electronics may be distributed throughout the machine instead of being concentrated in a central unit. In addition, the improved reliability made possible by integrated circuits will allow the construction of larger processing units. Machines similar to those in existence today will be built at lower costs and with faster turnaround.

9,647 citations

Journal ArticleDOI
TL;DR: A comprehensive review of 1D nanostructures can be found in this article, where the authors provide a comprehensive overview of current research activities that concentrate on one-dimensional (1D) nanostructure (wires, rods, belts and tubes).
Abstract: This article provides a comprehensive review of current research activities that concentrate on one-dimensional (1D) nanostructures—wires, rods, belts, and tubes—whose lateral dimensions fall anywhere in the range of 1 to 100 nm. We devote the most attention to 1D nanostructures that have been synthesized in relatively copious quantities using chemical methods. We begin this article with an overview of synthetic strategies that have been exploited to achieve 1D growth. We then elaborate on these approaches in the following four sections: i) anisotropic growth dictated by the crystallographic structure of a solid material; ii) anisotropic growth confined and directed by various templates; iii) anisotropic growth kinetically controlled by supersaturation or through the use of an appropriate capping reagent; and iv) new concepts not yet fully demonstrated, but with long-term potential in generating 1D nanostructures. Following is a discussion of techniques for generating various types of important heterostructured nanowires. By the end of this article, we highlight a range of unique properties (e.g., thermal, mechanical, electronic, optoelectronic, optical, nonlinear optical, and field emission) associated with different types of 1D nanostructures. We also briefly discuss a number of methods potentially useful for assembling 1D nanostructures into functional devices based on crossbar junctions, and complex architectures such as 2D and 3D periodic lattices. We conclude this review with personal perspectives on the directions towards which future research on this new class of nanostructured materials might be directed.

8,259 citations


"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper

  • ...vapor–liquid–solid chemistry [11], typically with the help of a...

    [...]

Journal Article
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as discussed by the authors. But the biggest potential lies in the production of large systems.
Abstract: The future of integrated electronics is the future of electronics itself. The advantages of integration will bring about a proliferation of electronics, pushing this science into many new areas. Integrated circuits will lead to such wonders as home computers—or at least terminals connected to a central computer—automatic controls for automobiles, and personal portable communications equipment. The electronic wristwatch needs only a display to be feasible today. But the biggest potential lies in the production of large systems. In telephone communications, integrated circuits in digital filters will separate channels on multiplex equipment. Integrated circuits will also switch telephone circuits and perform data processing. Computers will be more powerful, and will be organized in completely different ways. For example, memories built of integrated electronics may be distributed throughout the machine instead of being concentrated in a central unit. In addition, the improved reliability made possible by integrated circuits will allow the construction of larger processing units. Machines similar to those in existence today will be built at lower costs and with faster turnaround.

6,077 citations

Journal ArticleDOI
17 Aug 2001-Science
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Abstract: Boron-doped silicon nanowires (SiNWs) were used to create highly sensitive, real-time electrically based sensors for biological and chemical species. Amine- and oxide-functionalized SiNWs exhibit pH-dependent conductance that was linear over a large dynamic range and could be understood in terms of the change in surface charge during protonation and deprotonation. Biotin-modified SiNWs were used to detect streptavidin down to at least a picomolar concentration range. In addition, antigen-functionalized SiNWs show reversible antibody binding and concentration-dependent detection in real time. Lastly, detection of the reversible binding of the metabolic indicator Ca2+ was demonstrated. The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.

5,841 citations


"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper

  • ...sensing of chemical/biochemical species [9]....

    [...]

  • ...Electrical sensing through change in conductance (or resistance) of Si-NW has been demonstrated successfully for metal ions [9], [10], [62], DNA [63]–[68], proteins [69]–[71], virus [72], and cells [73]....

    [...]

Journal ArticleDOI
TL;DR: Highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.
Abstract: We describe highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays. Protein markers were routinely detected at femtomolar concentrations with high selectivity, and simultaneous incorporation of control nanowires enabled discrimination against false positives. Nanowire arrays allowed highly selective and sensitive multiplexed detection of prostate specific antigen (PSA), PSA-a1-antichymotrypsin, carcinoembryonic antigen and mucin-1, including detection to at least 0.9 pg/ml in undiluted serum samples. In addition, nucleic acid receptors enabled real-time assays of the binding, activity and small-molecule inhibition of telomerase using unamplified extracts from as few as ten tumor cells. The capability for multiplexed real-time monitoring of protein markers and telomerase activity with high sensitivity and selectivity in clinically relevant samples opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.

2,396 citations


"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper

  • ...Electrical sensing through change in conductance (or resistance) of Si-NW has been demonstrated successfully for metal ions [9], [10], [62], DNA [63]–[68], proteins [69]–[71], virus [72], and cells [73]....

    [...]