Journal ArticleDOI
Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
Navab Singh,K.D. Buddharaju,Sanjeev Kumar Manhas,Ajay Agarwal,S.C. Rustagi,Guo-Qiang Lo,N. Balasubramanian,Dim-Lee Kwong +7 more
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TLDR
The current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories are reviewed and the challenges and opportunities are outlined.Abstract:
Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.read more
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Journal ArticleDOI
FinFET CMOS logic gates with non-volatile states for reconfigurable computing systems
TL;DR: The extended applications in tunable ring oscillators for multi-functional IOT modules are successfully demonstrated in this study and enable reconfiguration ability in a Boolean computing unit at a gate level aimed for adaptive and specialized systems in the AI era.
Proceedings ArticleDOI
Functionalized 3D 7×20-array of vertically stacked SiNW FET for streptavidin sensing
Elizabeth Buitrago,Montserrat Fernandez-Bolanos Badia,Yordan M. Georgiev,Ran Yu,Olan Lotty,Justin D. Holmes,Adrian M. Nightingale,Adrian M. Ionescu +7 more
TL;DR: A 3D, vertically stacked silicon nanowire (SiNW) field effect transistor (FET) featuring a high density array (7×20) of fully depleted channels has been successfully fabricated by a CMOS compatible process on silicon on insulator (SOI) and functionalized for streptavidin detection for the first time as discussed by the authors.
Journal ArticleDOI
Reflectance Difference Spectroscopy in Vacuum–Ultraviolet Range: Developing Measurement System and Applying to Characterization of SiO2/Si Interfaces
TL;DR: Reflectance difference spectroscopy (RDS) in the vacuum-ultraviolet (VUV) range has been developed for the first time as mentioned in this paper, which has been applied to investigate the oxidation-induced optical anisotropies of the Si surfaces with (110), (331), (120), and (113) orientations.
Journal ArticleDOI
Modeling of inversion and centroid charges of long channel strained-silicon surrounding gate MOSFETs incorporating quantum effects
Fatimah K. A. Hamid,Zaharah Johari,N. Ezaila Alias,Wei Hong Lim,Suhana Mohamed Sultan,Wei Sun Leong,Razali Ismail +6 more
TL;DR: In this article, the authors presented a modeling approach for strained silicon surrounding gate MOSFETs, which simplifies the charge model by using an explicit solution technique which includes the strained and quantum effects.
Posted Content
Thermal Management in Fine-Grained 3-D Integrated Circuits.
TL;DR: 3-D finite element based analysis is performed to capture both static and transient thermal behaviors of 3-D circuits, and shows the effectiveness of heat management features.
References
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Journal ArticleDOI
Cramming More Components Onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
Younan Xia,Peidong Yang,Yugang Sun,Yiying Wu,Brian Mayers,Byron D. Gates,Yadong Yin,Franklin Kim,Haoquan Yan +8 more
TL;DR: A comprehensive review of 1D nanostructures can be found in this article, where the authors provide a comprehensive overview of current research activities that concentrate on one-dimensional (1D) nanostructure (wires, rods, belts and tubes).
Journal Article
Cramming More Components onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as discussed by the authors. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI
Multiplexed electrical detection of cancer markers with nanowire sensor arrays.
TL;DR: Highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.