Journal ArticleDOI
Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
Navab Singh,K.D. Buddharaju,Sanjeev Kumar Manhas,Ajay Agarwal,S.C. Rustagi,Guo-Qiang Lo,N. Balasubramanian,Dim-Lee Kwong +7 more
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TLDR
The current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories are reviewed and the challenges and opportunities are outlined.Abstract:
Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.read more
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Book ChapterDOI
Silicon-based nanowire MOSFETs: from process and device physics to simulation and modeling
TL;DR: In this article, a detailed review of silicon-based nanowire MOSFETs is presented, focusing on its crucial compact models and the circuit performance demonstration based on group research work and understanding on nanowires progress.
Proceedings ArticleDOI
Tin nanowire field effect transistor
TL;DR: Functionality of a dopant-free, single-material field effect transistor is demonstrated through ab initio simulations of a confinement modulated gap field-effect transistor in which the need for doping in the source, channel or drain is eliminated.
Journal ArticleDOI
Fabrication of Si and Ge vertical nanowire for transistor applications
TL;DR: In this article, vertical Si nanowire and hetero-structure integration of Ge nanowires was firstly fabricated for the first time to demonstrate the top-down etching process, which is applicable to fabricate vertical transistors.
Journal ArticleDOI
Electrostatic characterization and threshold voltage modeling of inversion type InGaAs gate-all-around MOSFET
TL;DR: In this article, the authors presented an analytical investigation of the electrostatic properties of a moderately doped symmetric gate-all-around nanowire MOSFET having InGaAs channel.
Book ChapterDOI
Gate-All-Around (GAA) NWFET with L g = 10 nm Simulation
Yung-Chun Wu,Yi-Ruei Jhan +1 more
TL;DR: In this paper, the depletion layer formed in the channel of traditional 2D MOSFET near source and drain, the short-channel effect (SCE) has become inevitable along with the scaling of L g dimension.
References
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Journal ArticleDOI
Cramming More Components Onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
Younan Xia,Peidong Yang,Yugang Sun,Yiying Wu,Brian Mayers,Byron D. Gates,Yadong Yin,Franklin Kim,Haoquan Yan +8 more
TL;DR: A comprehensive review of 1D nanostructures can be found in this article, where the authors provide a comprehensive overview of current research activities that concentrate on one-dimensional (1D) nanostructure (wires, rods, belts and tubes).
Journal Article
Cramming More Components onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as discussed by the authors. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI
Multiplexed electrical detection of cancer markers with nanowire sensor arrays.
TL;DR: Highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.