Journal ArticleDOI
Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
Navab Singh,K.D. Buddharaju,Sanjeev Kumar Manhas,Ajay Agarwal,S.C. Rustagi,Guo-Qiang Lo,N. Balasubramanian,Dim-Lee Kwong +7 more
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TLDR
The current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories are reviewed and the challenges and opportunities are outlined.Abstract:
Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.read more
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Journal ArticleDOI
Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice.
Lu Xie,Huilong Zhu,Yongkui Zhang,Xuezheng Ai,Junjie Li,Guilei Wang,Anyan Du,Zhenzhen Kong,Qi Wang,Shunshun Lu,Chen Li,Yangyang Li,Weixing Huang,Henry H. Radamson +13 more
TL;DR: In this paper, a dual-selective atomic layer etching (ALE) method was proposed to control the etch rate and the size of the Ge nanowires in vertical gate-all-around field-effect transistors (vGAAFETs).
Journal ArticleDOI
Impact of Surface Passivation on the Electronic Structure and Optical Properties oftheSi 1− x Ge x Nanowires
TL;DR: In this article, the electronic and optical properties of [110]-oriented Si1−xGex nanowires with different functional groups (H, F and O) were investigated by using first-principles calculations.
Journal ArticleDOI
Scaled-Down c-Si and c-SiGe Wagon-Wheels for the Visualization of the Anisotropy and Selectivity of Wet-Chemical Etchants.
TL;DR: The sensitivity of the c-Si wagon-wheels to detect anisotropic behavior of crystalline silicon in the alkaline etchants TMAH and NH4OH was demonstrated and selectivity values were calculated based on measurement of the sidewall loss of the spokes of the wagon-wheel.
References
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Journal ArticleDOI
Cramming More Components Onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
Younan Xia,Peidong Yang,Yugang Sun,Yiying Wu,Brian Mayers,Byron D. Gates,Yadong Yin,Franklin Kim,Haoquan Yan +8 more
TL;DR: A comprehensive review of 1D nanostructures can be found in this article, where the authors provide a comprehensive overview of current research activities that concentrate on one-dimensional (1D) nanostructure (wires, rods, belts and tubes).
Journal Article
Cramming More Components onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as discussed by the authors. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Journal ArticleDOI
Multiplexed electrical detection of cancer markers with nanowire sensor arrays.
TL;DR: Highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.