Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
TL;DR: The current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories are reviewed and the challenges and opportunities are outlined.
Abstract: Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.
Citations
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Patent•
IBM1
TL;DR: In this paper, a method for forming a nanowire field effect transistor (FET) was proposed, which consists of forming a gate stack around a portion of the nanowires, forming a capping layer on the gate stack, and forming a spacer adjacent to the sidewalls of gate stack.
Abstract: A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire over a semiconductor substrate, forming a gate stack around a portion of the nanowire, forming a capping layer on the gate stack, forming a spacer adjacent to sidewalls of the gate stack and around portions of nanowire extending from the gate stack, forming a hardmask layer on the capping layer and the first spacer, forming a metallic layer over the exposed portions of the device, depositing a conductive material over the metallic layer, removing the hardmask layer from the gate stack, and removing portions of the conductive material to define a source region contact and a drain region contact.
1 citations
01 Dec 2012
TL;DR: In this paper, the ballisitic current limit and gate leakage due to direct tunneling of a Rectangular Gate-all-around InGaAs Nanowire Transistor and their variation with fin width, oxide thickness and In compostion in In-GaAs was presented.
Abstract: This paper presents the ballisitic current limit and gate leakage due to direct tunneling of a Rectangular Gate-all-around InGaAs Nanowire Transistor and their variation with fin width, oxide thickness and In compostion in InGaAs Ballistic current is found to be higher (15×1011 Am−2) for about 20nm fin width, sub-5nm oxide thickness and In-rich InGaAs channel On the other hand, gate leakage is prominent for sub-4nm oxide thickness, larger fin width and In-rich InGaAs
1 citations
Dissertation•
01 Jan 2015
TL;DR: In this article, the authors developed a microelectromechanical system (MEMS) technology utilizing the transduction principles of silicon nanowire (SiNW)-based piezoresistance and bulk acoustic resonance.
Abstract: Sense of touch plays an important role in surgery. Minimally invasive surgical (MIS) procedures provide great benefits to patients; however, the surgeon’s ability of perceiving force and tactile sensation from tissues is severely impaired. Performing surgery without such sensory information could lead to increase of tissue trauma and vital organic tissue damage. This dissertation presents the development of miniaturized force and tactile sensors that are able to measure the contact force and relative hardness of contact objects, with the purpose of enhancing the surgeon’s touch sensibility during minimally invasive surgery. The force and tactile sensors developed in this dissertation are based on microelectromechanical systems (MEMS) technology utilizing the transduction principles of silicon nanowire (SiNW)-based piezoresistance and bulk acoustic resonance. A miniaturized force sensor that can be integrated on the distal tip of a commercial guidewire is firstly developed. The sensor has a sensory area of 200 μm × 200 μm, and utilizes SiNWs as piezoresistive sensing element by taking advantage of its ultra-small dimension and high sensitivity. Together with the movable core wire, the sensor can detect contact forces while maintaining the original welded tip which is an essential part of the standard guidewire assembly. A finite element (FE) model is built in COMSOL Multiphiphysics v4.2, in the aim of finding the maximum stress location in order to locate the SiNWs at the high stress regions and simulating the mechanical behaviour of the sensor-guidewire interaction as well. The results from simulation have been verified by the experimental measurement results. By taking advantages of the high sensitivity of SiNWs, the fabricated sensor is capable of detecting small displacement in nanometer scale with a sensitivity of 13.4 x 10 μm in the z-direction. It has been shown from the characterization results that the sensor has high linearity (> 99.9%) to the applied load without obvious hysteresis. To enhance the force sensitivity of the ring-shaped sensor that has a flat surface, a biomimetic tactile sensor is then designed and characterized. The Meissner corpuscle inspired sensor is designed with a rigid spherical ball attached on top of the suspended ring structure mimicking the biological structure of the Meissner corpuscles. The sensor is developed with a simplified fabrication and packaging process by dropping spherical balls on the SiNW-based ring structure. Finite element analysis (FEA) has been used to predict the mechanical behaviours of the tactile sensor with rigid solder ball and with elastic bump covering of rigid solder ball underneath. The performance of the SiNWs on the bio-inspired sensor and on the bare ring-shaped sensing element is comparatively studied by repeatability and hysteresis tests. The effectiveness of sensitivity enhancement of the bio-inspired tactile sensor with solder ball attached is verified from the experimental results, in which the fractional change in resistance in normal direction is improved from 1.34 percent to 2.8 percent per micro meter. Following, a miniaturized resonant tactile sensor is developed for material elasticity measurement. The sensor is based on a MEMS silicon bulk acoustic wave (BAW) resonator, incorporated with a rounded sensing tip and mechanical stoppers to limit the maximum loading force and contact area. Upon contact with the material, the resonant frequency shifts corresponding to the amount of mass and stiffness loading from the contact object. The BAW resonator is excited in the square-extensional (SE) mode and is fabricated using a silicon-on-insulator (SOI) multi-user MEMS process through MEMSCAP. The resonant frequency of the resonator is 2.2 MHz and has a Q-factor of 10430 in air. The ability of the sensor to measure the relative hardness of the contact object is tested with experiments by contacting the sensor with materials of different degrees of Young’s modulus. Results show that the BAW resonant tactile sensor can provide information not only about the stiffness of the materials in contact with the sensor, but also the extent of force/stress applied on the sensing tip. The sensor is demonstrated to be able to differentiate materials of Young’s modulus in the GPa range. Chapter
1 citations
Cites methods from "Si, SiGe Nanowire Devices by Top–Do..."
...The silicon nanowires can be either fabricated using the bottom-up approach and then transferred onto the pre-fabricated MEMS device [87], or can be fabricated by top-down technique directionally along with the MEMS device fabrication [88]....
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08 Jun 2014
TL;DR: In this paper, the technological routes used to build horizontal and vertical gate all-around (GAA) Field Effect Transistors (FETs) using both Si and SiGe NanoWires (NWs) were reported.
Abstract: This paper report the technological routes used to build horizontal and vertical gate all-around (GAA) Field-Effect Transistors (FETs) using both Si and SiGe NanoWires (NWs). Horizontal Si and SiGe nanowires FETs are characterized in back gate configuration. Vertical devices using Si nanowires (NWs) show good characteristics with an I ON /I OFF ratio close to 106 and sub-threshold slope around 145 mV/decade. Finally, vertical SiGe devices also obtained with the same technological process present an I ON /I OFF ratio from 103 to 104 but also poor dynamics which can be explained by the high interface traps density.
1 citations
References
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01 Jan 1998
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Abstract: The future of integrated electronics is the future of electronics itself. The advantages of integration will bring about a proliferation of electronics, pushing this science into many new areas. Integrated circuits will lead to such wonders as home computers—or at least terminals connected to a central computer—automatic controls for automobiles, and personal portable communications equipment. The electronic wristwatch needs only a display to be feasible today. But the biggest potential lies in the production of large systems. In telephone communications, integrated circuits in digital filters will separate channels on multiplex equipment. Integrated circuits will also switch telephone circuits and perform data processing. Computers will be more powerful, and will be organized in completely different ways. For example, memories built of integrated electronics may be distributed throughout the machine instead of being concentrated in a central unit. In addition, the improved reliability made possible by integrated circuits will allow the construction of larger processing units. Machines similar to those in existence today will be built at lower costs and with faster turnaround.
9,647 citations
TL;DR: A comprehensive review of 1D nanostructures can be found in this article, where the authors provide a comprehensive overview of current research activities that concentrate on one-dimensional (1D) nanostructure (wires, rods, belts and tubes).
Abstract: This article provides a comprehensive review of current research activities that concentrate on one-dimensional (1D) nanostructures—wires, rods, belts, and tubes—whose lateral dimensions fall anywhere in the range of 1 to 100 nm. We devote the most attention to 1D nanostructures that have been synthesized in relatively copious quantities using chemical methods. We begin this article with an overview of synthetic strategies that have been exploited to achieve 1D growth. We then elaborate on these approaches in the following four sections: i) anisotropic growth dictated by the crystallographic structure of a solid material; ii) anisotropic growth confined and directed by various templates; iii) anisotropic growth kinetically controlled by supersaturation or through the use of an appropriate capping reagent; and iv) new concepts not yet fully demonstrated, but with long-term potential in generating 1D nanostructures. Following is a discussion of techniques for generating various types of important heterostructured nanowires. By the end of this article, we highlight a range of unique properties (e.g., thermal, mechanical, electronic, optoelectronic, optical, nonlinear optical, and field emission) associated with different types of 1D nanostructures. We also briefly discuss a number of methods potentially useful for assembling 1D nanostructures into functional devices based on crossbar junctions, and complex architectures such as 2D and 3D periodic lattices. We conclude this review with personal perspectives on the directions towards which future research on this new class of nanostructured materials might be directed.
8,259 citations
"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper
...vapor–liquid–solid chemistry [11], typically with the help of a...
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Journal Article•
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as discussed by the authors. But the biggest potential lies in the production of large systems.
Abstract: The future of integrated electronics is the future of electronics itself. The advantages of integration will bring about a proliferation of electronics, pushing this science into many new areas. Integrated circuits will lead to such wonders as home computers—or at least terminals connected to a central computer—automatic controls for automobiles, and personal portable communications equipment. The electronic wristwatch needs only a display to be feasible today. But the biggest potential lies in the production of large systems. In telephone communications, integrated circuits in digital filters will separate channels on multiplex equipment. Integrated circuits will also switch telephone circuits and perform data processing. Computers will be more powerful, and will be organized in completely different ways. For example, memories built of integrated electronics may be distributed throughout the machine instead of being concentrated in a central unit. In addition, the improved reliability made possible by integrated circuits will allow the construction of larger processing units. Machines similar to those in existence today will be built at lower costs and with faster turnaround.
6,077 citations
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Abstract: Boron-doped silicon nanowires (SiNWs) were used to create highly sensitive, real-time electrically based sensors for biological and chemical species. Amine- and oxide-functionalized SiNWs exhibit pH-dependent conductance that was linear over a large dynamic range and could be understood in terms of the change in surface charge during protonation and deprotonation. Biotin-modified SiNWs were used to detect streptavidin down to at least a picomolar concentration range. In addition, antigen-functionalized SiNWs show reversible antibody binding and concentration-dependent detection in real time. Lastly, detection of the reversible binding of the metabolic indicator Ca2+ was demonstrated. The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
5,841 citations
"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper
...sensing of chemical/biochemical species [9]....
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...Electrical sensing through change in conductance (or resistance) of Si-NW has been demonstrated successfully for metal ions [9], [10], [62], DNA [63]–[68], proteins [69]–[71], virus [72], and cells [73]....
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TL;DR: Highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.
Abstract: We describe highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays. Protein markers were routinely detected at femtomolar concentrations with high selectivity, and simultaneous incorporation of control nanowires enabled discrimination against false positives. Nanowire arrays allowed highly selective and sensitive multiplexed detection of prostate specific antigen (PSA), PSA-a1-antichymotrypsin, carcinoembryonic antigen and mucin-1, including detection to at least 0.9 pg/ml in undiluted serum samples. In addition, nucleic acid receptors enabled real-time assays of the binding, activity and small-molecule inhibition of telomerase using unamplified extracts from as few as ten tumor cells. The capability for multiplexed real-time monitoring of protein markers and telomerase activity with high sensitivity and selectivity in clinically relevant samples opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.
2,396 citations
"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper
...Electrical sensing through change in conductance (or resistance) of Si-NW has been demonstrated successfully for metal ions [9], [10], [62], DNA [63]–[68], proteins [69]–[71], virus [72], and cells [73]....
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