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Journal ArticleDOI

Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications

TL;DR: The current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories are reviewed and the challenges and opportunities are outlined.
Abstract: Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.
Citations
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Journal ArticleDOI
TL;DR: In this article , a comparative study of the double gate MOSFET, vertical silicon gate all around nanowire (GAA-NW) tunneling field effect transistor (TFET) and SiGe-source HfO2-insulator GAA- NW TFET is presented to prove that the last can outperform the others in terms of high performance, energy efficiency, ultra-low power, high on-chip density and gate controllability.
Journal ArticleDOI
TL;DR: In this paper, the effect of the thickness of the low-temperature Si buffer layer on an insulator on the sensitivity of oxidized Si1−xGex nanowire samples with different Ge contents was investigated.
Abstract: Si1−xGex nanowire biosensors are attractive for their high sensitivity due to the large surface-to-volume ratio, high carrier mobility, and silicon compatibility. In this work, we study the effect of the thickness of the low-temperature Si (LT-Si) buffer layer on an insulator on the sensitivity of oxidized Si1−xGex nanowire samples with different Ge contents by increasing the Si buffer thickness from 20 to 60 nm. 3-Aminopropyltrimethoxysilane (APTMS) was used as a biochemical reagent. It was demonstrated that, with the proper Ge content and LT-Si buffer thickness, the sensitivity of the Si1−xGex nanowire is high and it can be further improved by Si1−xGex oxidation. This can be attributed to the reduction of the diameter to the nanometer order, which gives rise to an increased surface-to-volume ratio and further enhances the sensitivity of the biosensor.
Journal ArticleDOI
TL;DR: In this article, the technological routes used to build planar and vertical gate all-around (GAA) field effect transistors (FETs) using both Si and SiGe nanowires (NWs) and the electrical performances of the as-obtained components are discussed.
Abstract: The authors present the technological routes used to build planar and vertical gate all-around (GAA) field-effect transistors (FETs) using both Si and SiGe nanowires (NWs) and the electrical performances of the as-obtained components. Planar FETs are characterized in back gate configuration and exhibit good behavior such as an ION/Ioff ratio up to 106. Hysteretic behavior and sub-threshold slope values with respect to surface and oxide interface trap densities are discussed. Vertical devices using Si NWs show good characteristics at the state of the art with ION/IOFF ratio close to 106 and sub-threshold slope around 125 mV/decade while vertical SiGe devices also obtained with the same technological processes, present an ION/IOFF ratio from 103 to 104 but with poor dynamics which can be explained by the high interface traps density.
Journal ArticleDOI
TL;DR: In this paper , the authors have investigated the quantum ballistic transport properties of Si nanowire MOSFET (Si NWMOSFet) with 4 nm gate length.
Abstract: With advancements in nanomaterial synthesis, semiconductor device technology entered a new era with nanotechnology. In fact, quantum effects such as confinement and tunneling have played a significant role in device characteristics. In this work, we have investigated quantum ballistic transport properties of Si nanowire MOSFET (Si NWMOSFET) with 4 nm gate length. Since gate length is shorter than the electron wavelength in our Si NWMOSFET, ballistic transport in one dimension (1D) is expected to be the dominant mechanism for carrier transport. Therefore, the parameters which are crucial for efficient MOSFET operation such as gate length, temperature, gate voltage have been simulated using the density gradient method to present quantum confinement effect on device transfer characteristics. We have found that Si NWMOSFET has an I_on/I_off ratio > 10^8, which is close to ideal value for similar nano MOSFETs. Moreover, due to short channel, intersubband scattering can deteriorate 1D ballistic transport properties of Si NWMOSFET, especially in low temperatures.
23 Mar 2009
TL;DR: In this paper, a gate-all-around (GAA) nanowire MOSFET (NW FET) and SET/SHT (SHT) were fabricated by using ultra-narrow channel method, and two directions of strain were applied by mechanically.
Abstract: The size of a metal-oxide-semiconductor field-effect-transistor (MOSFET) in very-large-scale integrated circuits (VLSI) have been scaled down for higher integration and higher performance However, potential coupling between source and drain becomes prominent as a gate length is shrunk below to sub-50 nm and this provokes large short-channel-effects (SCEs) As a result, gate controllability to surface potential is weakened, and accordingly, subthreshold leak current becomes remarkable In order to obtain high SCE immunity using conventional bulk planar-type MOSFETs, high channel doping concentration is required, but high doping level causes mobility degradation and worsens characteristic fluctuation of MOSFETs Thus, continuous scaling of the conventional bulk planer-type MOSFETs is now facing difficult situation and is challenged by physical and technological limitation Silicon nanowire is one of the most promising structure for future ultra-scaled device due to extremely small size and has two attractive devices: gate-all-around (GAA) nanowire MOSFET (NW FET) and SET/SHT NW FET and SET/SHT are promising devices for ultra scaled nano regime device due to superior SCE immunity and high functionality, respectively By recent progress in silicon nano-structure fabrication technique, high performance NW FETs having uniform channel size is fabricated, and large Coulomb blockade oscillation in SET/SHT is observed even at room-temperature On the other hands, strain technology is extensively investigated for mobility enhancement in MOSFET However, most of the studies have paid attention only to three-dimensional (3D) or two-dimensional (2D) channel MOSFETs, not to ultra-nano scaled one-dimensional (1D) or zero-dimensional (0D) devices, such as NW FET and SET/SHT Although driving current is gradually not affected by mobility term as device scaled to sub-20 nm because ballistic transport becomes dominant, effective mass which determines incidence velocity is still influential on drain current and the effective mass is controllable by using strain technology Also, strain in SET/SHT is expected to discover new physics of SET/SHT and improve understanding of operation principals Therefore, demonstration of strain technology and confirmation of the effects on the NW FET and SET/SHT are strongly desired The objective of this work is to investigate the strain technology in the future nano-scaled NW FET and SET/SHT We confirm the effectiveness of the strain even at ultra narrow NW FET and nanowire size dependency is studied systematically Also, the strain effect on the novel device SET/SHT which is operated by tunneling mechanism is discussed to discover physics of SET/SHT After NW FETs and SETs/SHTs are fabricated by using ultra-narrow channel method, two directions of strain are applied by mechanically In NW FETs, we observe simple strain effects, namely Vth shift and mobility modulation at low Vover and high Vover, respectively NW pFETs provide greater ΔId/Id than NW nFETs, and nanowire width dependency of the effects is observed for the first time only in NW pFETs because the effective mass m* modulation is decreased as nanowire width becomes narrower In SETs/SHTs case, in addition to Vth shift and mobility enhancement, Coulomb blockade oscillation characteristics are changed by the strain While current modulation is very complicated in SETs, strain effects on SHTs are easily analyzed by means of m* modulation More current improvement and characteristics modification can be expected, if relatively larger strain (~ GPa) is applied Acknowledgements The research work described in this dissertation carried out at Institute of Industrial Science, the University of Tokyo, while the author was a graduate student in Department of Electronics Engineering, School of Engineering, the University of Tokyo, from April 2007 to March 2009 This work has been supported by many people and the author would like to take this opportunity to express his gratitude for their help and contribution First of all, the author would like to extend his deepest appreciation to the dissertation supervisor, Prof T Hiramoto, Institute of Industrial Science, the University of Tokyo, for providing appropriate guidance and opportunity to pursue my research This work could not have been accomplished without his continuous encouragement The author would like to thank Prof H Fujita, Prof Y Arakawa, and Prof H Toshiyoshi for kindly providing experimental apparatus for the device fabrication The author is also grateful to Profs K Asada, T Sakurai, T Shibata, S Takagi, and M Takamiya for valuable comments on this work The author would like to thank T Saraya, H Kawai, and W Nagashiro for their technical supports to maintain the experimental instruments and equipments The author would express special thanks to Dr K Miyaji for his unsparing advices for single-electron transistors and kind instructions on the fabrication process The author is really indebted to him for all his help The author is also grateful to the members of Hiramoto Laboratory: P Arifin, J Chen, K Shimizu, K Mao, JS Park, K Takahashi, Y Takahashi, T Mama, R Hashimoto, L Zhu, M Suzuki, R Suzuki, CH Lee, I Yamato, T Kanno for stimulating daily discussions Finally, the author would like to express his gratitude to K Kojima for their assistance in the office work

Cites background from "Si, SiGe Nanowire Devices by Top–Do..."

  • ...However, it is also anticipated that as the size becomes below several tens of nanometers, the gate controllability over electrons and holes in the channel is relatively weakened [2-3] because electrostatic distribution of the channel is easily modulated by drain electrode as the physical distance between the source and drain gets closer and scaling of power supply voltage (Vdd) is of much slower than MOSFET’s size scaling....

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  • ...[3] B....

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  • ...Gate-all-around (GAA) nanowire MOSFET (NW FET) is showing excellent gate control to enable fast on/off switching and has good short channel effects (SCEs) immunity [1-3]....

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References
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Journal ArticleDOI
01 Jan 1998
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Abstract: The future of integrated electronics is the future of electronics itself. The advantages of integration will bring about a proliferation of electronics, pushing this science into many new areas. Integrated circuits will lead to such wonders as home computers—or at least terminals connected to a central computer—automatic controls for automobiles, and personal portable communications equipment. The electronic wristwatch needs only a display to be feasible today. But the biggest potential lies in the production of large systems. In telephone communications, integrated circuits in digital filters will separate channels on multiplex equipment. Integrated circuits will also switch telephone circuits and perform data processing. Computers will be more powerful, and will be organized in completely different ways. For example, memories built of integrated electronics may be distributed throughout the machine instead of being concentrated in a central unit. In addition, the improved reliability made possible by integrated circuits will allow the construction of larger processing units. Machines similar to those in existence today will be built at lower costs and with faster turnaround.

9,647 citations

Journal ArticleDOI
TL;DR: A comprehensive review of 1D nanostructures can be found in this article, where the authors provide a comprehensive overview of current research activities that concentrate on one-dimensional (1D) nanostructure (wires, rods, belts and tubes).
Abstract: This article provides a comprehensive review of current research activities that concentrate on one-dimensional (1D) nanostructures—wires, rods, belts, and tubes—whose lateral dimensions fall anywhere in the range of 1 to 100 nm. We devote the most attention to 1D nanostructures that have been synthesized in relatively copious quantities using chemical methods. We begin this article with an overview of synthetic strategies that have been exploited to achieve 1D growth. We then elaborate on these approaches in the following four sections: i) anisotropic growth dictated by the crystallographic structure of a solid material; ii) anisotropic growth confined and directed by various templates; iii) anisotropic growth kinetically controlled by supersaturation or through the use of an appropriate capping reagent; and iv) new concepts not yet fully demonstrated, but with long-term potential in generating 1D nanostructures. Following is a discussion of techniques for generating various types of important heterostructured nanowires. By the end of this article, we highlight a range of unique properties (e.g., thermal, mechanical, electronic, optoelectronic, optical, nonlinear optical, and field emission) associated with different types of 1D nanostructures. We also briefly discuss a number of methods potentially useful for assembling 1D nanostructures into functional devices based on crossbar junctions, and complex architectures such as 2D and 3D periodic lattices. We conclude this review with personal perspectives on the directions towards which future research on this new class of nanostructured materials might be directed.

8,259 citations


"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper

  • ...vapor–liquid–solid chemistry [11], typically with the help of a...

    [...]

Journal Article
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as discussed by the authors. But the biggest potential lies in the production of large systems.
Abstract: The future of integrated electronics is the future of electronics itself. The advantages of integration will bring about a proliferation of electronics, pushing this science into many new areas. Integrated circuits will lead to such wonders as home computers—or at least terminals connected to a central computer—automatic controls for automobiles, and personal portable communications equipment. The electronic wristwatch needs only a display to be feasible today. But the biggest potential lies in the production of large systems. In telephone communications, integrated circuits in digital filters will separate channels on multiplex equipment. Integrated circuits will also switch telephone circuits and perform data processing. Computers will be more powerful, and will be organized in completely different ways. For example, memories built of integrated electronics may be distributed throughout the machine instead of being concentrated in a central unit. In addition, the improved reliability made possible by integrated circuits will allow the construction of larger processing units. Machines similar to those in existence today will be built at lower costs and with faster turnaround.

6,077 citations

Journal ArticleDOI
17 Aug 2001-Science
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Abstract: Boron-doped silicon nanowires (SiNWs) were used to create highly sensitive, real-time electrically based sensors for biological and chemical species. Amine- and oxide-functionalized SiNWs exhibit pH-dependent conductance that was linear over a large dynamic range and could be understood in terms of the change in surface charge during protonation and deprotonation. Biotin-modified SiNWs were used to detect streptavidin down to at least a picomolar concentration range. In addition, antigen-functionalized SiNWs show reversible antibody binding and concentration-dependent detection in real time. Lastly, detection of the reversible binding of the metabolic indicator Ca2+ was demonstrated. The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.

5,841 citations


"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper

  • ...sensing of chemical/biochemical species [9]....

    [...]

  • ...Electrical sensing through change in conductance (or resistance) of Si-NW has been demonstrated successfully for metal ions [9], [10], [62], DNA [63]–[68], proteins [69]–[71], virus [72], and cells [73]....

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Journal ArticleDOI
TL;DR: Highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.
Abstract: We describe highly sensitive, label-free, multiplexed electrical detection of cancer markers using silicon-nanowire field-effect devices in which distinct nanowires and surface receptors are incorporated into arrays. Protein markers were routinely detected at femtomolar concentrations with high selectivity, and simultaneous incorporation of control nanowires enabled discrimination against false positives. Nanowire arrays allowed highly selective and sensitive multiplexed detection of prostate specific antigen (PSA), PSA-a1-antichymotrypsin, carcinoembryonic antigen and mucin-1, including detection to at least 0.9 pg/ml in undiluted serum samples. In addition, nucleic acid receptors enabled real-time assays of the binding, activity and small-molecule inhibition of telomerase using unamplified extracts from as few as ten tumor cells. The capability for multiplexed real-time monitoring of protein markers and telomerase activity with high sensitivity and selectivity in clinically relevant samples opens up substantial possibilities for diagnosis and treatment of cancer and other complex diseases.

2,396 citations


"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper

  • ...Electrical sensing through change in conductance (or resistance) of Si-NW has been demonstrated successfully for metal ions [9], [10], [62], DNA [63]–[68], proteins [69]–[71], virus [72], and cells [73]....

    [...]