Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
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Cites background from "Si, SiGe Nanowire Devices by Top–Do..."
...(∼70 mV/V) is achieved as a result of excellent gate control by GAA structure [4], [11], and [12]....
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References
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"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper
...Electrical characterization of NW devices at cryogenic temperatures shows the evidence of discrete energy bands as a result of quantum confinement [45]–[48]....
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Additional excerpts
...[24] made use of this stress-limited oxida-...
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33 citations
"Si, SiGe Nanowire Devices by Top–Do..." refers methods in this paper
...The symmetry in pull-up/pull-down characteristics has been achieved in two different ways, namely, 1) by using a longer n-channel device compared with the p-channel device [51] and 2) by using a larger number of NWs in p-channel transistors [52]–[54]....
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...We have demonstrated CMOS inverters with NW GAA channels using the top–down approach [51]–[54]....
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33 citations
33 citations
"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper
...stressors in the structure to improve mobility [2], [3]....
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