Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
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...(∼70 mV/V) is achieved as a result of excellent gate control by GAA structure [4], [11], and [12]....
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"Si, SiGe Nanowire Devices by Top–Do..." refers background or methods in this paper
...NW FETs show excellent gate control, near-ideal subthreshold behavior, high ION/IOFF ratio, and high drive current [21], [27]–[ 29 ]....
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...The inset shows the NW channel before poly-gate deposition. Reprinted with permission from [ 29 ]....
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...(b) Drain current characteristics showing that high drive currents are possible in GAA FETs. Reprinted with permission from [ 29 ]....
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...The wires have been carefully released by etching away the grown oxide in dilute HF [28], [ 29 ]....
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...For instance, we obtained ION values of 2.4 and 1.3 mA/μm, DIBL values of 8 and 13 mV/V, and SS of 60 and 65 mV/dec for NMOS and PMOS, respectively [ 29 ]....
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"Si, SiGe Nanowire Devices by Top–Do..." refers background in this paper
...NWs have also been synthesized in the “microcracks” induced in the thin films using stress for templated growth [18]....
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