Journal Article•
Silicon as a mechanical material
01 Jan 1999-SPIE milestone series (Society of Photo-Optical Instrumentation Engineers)-Vol. 153, pp 3-40
TL;DR: In this article, the advantages of employing silicon as a mechanical material, the relevant mechanical characteristics of silicon, and the processing techniques which are specific to micromechanical structures are discussed.
Abstract: Single-crystal silicon is being increasingly employed in a variety of new commercial products not because of its well-established electronic properties, but rather because of its excellent mechanical properties. In addition, recent trends in the engineering literature indicate a growing interest in the use of silicon as a mechanical material with the ultimate goal of developing a broad range of inexpensive, batch-fabricated, high-performance sensors and transducers which are easily interfaced with the rapidly proliferating microprocessor. This review describes the advantages of employing silicon as a mechanical material, the relevant mechanical characteristics of silicon, and the processing techniques which are specific to micromechanical structures. Finally, the potentials of this new technology are illustrated by numerous detailed examples from the literature. It is clear that silicon will continue to be aggressively exploited in a wide variety of mechanical applications complementary to its traditional role as an electronic material. Furthermore, these multidisciplinary uses of silicon will significantly alter the way we think about all types of miniature mechanical devices and components.
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Book•
01 Jan 2001
TL;DR: In this paper, the authors present a general framework for coupling matrix for Coupled Resonator Filters with short-circuited Stubs (UWB) and Cascaded Quadruplet (CQ) filters.
Abstract: Preface to the Second Edition. Preface to the First Edition. 1 Introduction. 2 Network Analysis. 2.1 Network Variables. 2.2 Scattering Parameters. 2.3 Short-Circuit Admittance Parameters. 2.4 Open-Circuit Impedance Parameters. 2.5 ABCD Parameters. 2.6 Transmission-Line Networks. 2.7 Network Connections. 2.8 Network Parameter Conversions. 2.9 Symmetrical Network Analysis. 2.10 Multiport Networks. 2.11 Equivalent and Dual Network. 2.12 Multimode Networks. 3 Basic Concepts and Theories of Filters. 3.1 Transfer Functions. 3.2 Lowpass Prototype Filters and Elements. 3.3 Frequency and Element Transformations. 3.4 Immittance Inverters. 3.5 Richards' Transformation and Kuroda Identities. 3.6 Dissipation and Unloaded Quality Factor. 4 Transmission Lines and Components. 4.1 Microstrip Lines. 4.2 Coupled Lines. 4.3 Discontinuities and Components. 4.4 Other Types of Microstrip Lines. 4.5 Coplanar Waveguide (CPW). 4.6 Slotlines. 5 Lowpass and Bandpass Filters. 5.1 Lowpass Filters. 5.2 Bandpass Filters. 6 Highpass and Bandstop Filters. 6.1 Highpass Filters. 6.2 Bandstop Filters. 7 Coupled-Resonator Circuits. 7.1 General Coupling Matrix for Coupled-Resonator Filters. 7.2 General Theory of Couplings. 7.3 General Formulation for Extracting Coupling Coefficient k. 7.4 Formulation for Extracting External Quality Factor Qe. 7.5 Numerical Examples. 7.6 General Coupling Matrix Including Source and Load. 8 CAD for Low-Cost and High-Volume Production. 8.1 Computer-Aided Design (CAD) Tools. 8.2 Computer-Aided Analysis (CAA). 8.3 Filter Synthesis by Optimization. 8.4 CAD Examples. 9 Advanced RF/Microwave Filters. 9.1 Selective Filters with a Single Pair of Transmission Zeros. 9.2 Cascaded Quadruplet (CQ) Filters. 9.3 Trisection and Cascaded Trisection (CT) Filters. 9.4 Advanced Filters with Transmission-Line Inserted Inverters. 9.5 Linear-Phase Filters. 9.6 Extracted Pole Filters. 9.7 Canonical Filters. 9.8 Multiband Filters. 10 Compact Filters and Filter Miniaturization. 10.1 Miniature Open-Loop and Hairpin Resonator Filters. 10.2 Slow-Wave Resonator Filters. 10.3 Miniature Dual-Mode Resonator Filters. 10.4 Lumped-Element Filters. 10.5 Miniature Filters Using High Dielectric-Constant Substrates. 10.6 Multilayer Filters. 11 Superconducting Filters. 11.1 High-Temperature Superconducting (HTS) Materials. 11.2 HTS Filters for Mobile Communications. 11.3 HTS Filters for Satellite Communications. 11.4 HTS Filters for Radio Astronomy and Radar. 11.5 High-Power HTS Filters. 11.6 Cryogenic Package. 12 Ultra-Wideband (UWB) Filters. 12.1 UWB Filters with Short-Circuited Stubs. 12.2 UWB-Coupled Resonator Filters. 12.3 Quasilumped Element UWB Filters. 12.4 UWB Filters Using Cascaded Miniature High- And Lowpass Filters. 12.5 UWB Filters with Notch Band(s). 13 Tunable and Reconfigurable Filters. 13.1 Tunable Combline Filters. 13.2 Tunable Open-Loop Filters without Via-Hole Grounding. 13.3 Reconfigurable Dual-Mode Bandpass Filters. 13.4 Wideband Filters with Reconfigurable Bandwidth. 13.5 Reconfigurable UWB Filters. 13.6 RF MEMS Reconfigurable Filters. 13.7 Piezoelectric Transducer Tunable Filters. 13.8 Ferroelectric Tunable Filters. Appendix: Useful Constants and Data. A.1 Physical Constants. A.2 Conductivity of Metals at 25 C (298K). A.3 Electical Resistivity rho in 10-8 m of Metals. A.4 Properties of Dielectric Substrates. Index.
4,774 citations
TL;DR: In this article, the authors examined the methods used to synthesize transition metal dichalcogenides (TMDCs) and their properties with particular attention to their charge density wave, superconductive and topological phases, along with their applications in devices with enhanced mobility and with the use of strain engineering to improve their properties.
Abstract: Graphene is very popular because of its many fascinating properties, but its lack of an electronic bandgap has stimulated the search for 2D materials with semiconducting character. Transition metal dichalcogenides (TMDCs), which are semiconductors of the type MX2, where M is a transition metal atom (such as Mo or W) and X is a chalcogen atom (such as S, Se or Te), provide a promising alternative. Because of its robustness, MoS2 is the most studied material in this family. TMDCs exhibit a unique combination of atomic-scale thickness, direct bandgap, strong spin–orbit coupling and favourable electronic and mechanical properties, which make them interesting for fundamental studies and for applications in high-end electronics, spintronics, optoelectronics, energy harvesting, flexible electronics, DNA sequencing and personalized medicine. In this Review, the methods used to synthesize TMDCs are examined and their properties are discussed, with particular attention to their charge density wave, superconductive and topological phases. The use of TMCDs in nanoelectronic devices is also explored, along with strategies to improve charge carrier mobility, high frequency operation and the use of strain engineering to tailor their properties. Two-dimensional transition metal dichalcogenides (TMDCs) exhibit attractive electronic and mechanical properties. In this Review, the charge density wave, superconductive and topological phases of TMCDs are discussed, along with their synthesis and applications in devices with enhanced mobility and with the use of strain engineering to improve their properties.
3,436 citations
TL;DR: In this article, the authors survey progress over the past 25 years in the development of microscale devices for pumping fluids and attempt to provide both a reference for micropump researchers and a resource for those outside the field who wish to identify the best micropumps for a particular application.
Abstract: We survey progress over the past 25 years in the development of microscale devices for pumping fluids. We attempt to provide both a reference for micropump researchers and a resource for those outside the field who wish to identify the best micropump for a particular application. Reciprocating displacement micropumps have been the subject of extensive research in both academia and the private sector and have been produced with a wide range of actuators, valve configurations and materials. Aperiodic displacement micropumps based on mechanisms such as localized phase change have been shown to be suitable for specialized applications. Electroosmotic micropumps exhibit favorable scaling and are promising for a variety of applications requiring high flow rates and pressures. Dynamic micropumps based on electrohydrodynamic and magnetohydrodynamic effects have also been developed. Much progress has been made, but with micropumps suitable for important applications still not available, this remains a fertile area for future research.
1,913 citations
TL;DR: This work provides the first direct experimental evidence for dry adhesion of gecko setae by van der Waals forces, and suggests a possible design principle underlying the repeated, convergent evolution of dry adhesive microstructures in gecko, anoles, skinks, and insects.
Abstract: Geckos have evolved one of the most versatile and effective adhesives known. The mechanism of dry adhesion in the millions of setae on the toes of geckos has been the focus of scientific study for over a century. We provide the first direct experimental evidence for dry adhesion of gecko setae by van der Waals forces, and reject the use of mechanisms relying on high surface polarity, including capillary adhesion. The toes of live Tokay geckos were highly hydrophobic, and adhered equally well to strongly hydrophobic and strongly hydrophilic, polarizable surfaces. Adhesion of a single isolated gecko seta was equally effective on the hydrophobic and hydrophilic surfaces of a microelectro-mechanical systems force sensor. A van der Waals mechanism implies that the remarkable adhesive properties of gecko setae are merely a result of the size and shape of the tips, and are not strongly affected by surface chemistry. Theory predicts greater adhesive forces simply from subdividing setae to increase surface density, and suggests a possible design principle underlying the repeated, convergent evolution of dry adhesive microstructures in gecko, anoles, skinks, and insects. Estimates using a standard adhesion model and our measured forces come remarkably close to predicting the tip size of Tokay gecko seta. We verified the dependence on size and not surface type by using physical models of setal tips nanofabricated from two different materials. Both artificial setal tips stuck as predicted and provide a path to manufacturing the first dry, adhesive microstructures.
1,745 citations
TL;DR: In this paper, the authors present the best known elasticity data for silicon, both in depth and in a summary form, so that it may be readily accessible to MEMS designers.
Abstract: The Young's modulus (E) of a material is a key parameter for mechanical engineering design. Silicon, the most common single material used in microelectromechanical systems (MEMS), is an anisotropic crystalline material whose material properties depend on orientation relative to the crystal lattice. This fact means that the correct value of E for analyzing two different designs in silicon may differ by up to 45%. However, perhaps, because of the perceived complexity of the subject, many researchers oversimplify silicon elastic behavior and use inaccurate values for design and analysis. This paper presents the best known elasticity data for silicon, both in depth and in a summary form, so that it may be readily accessible to MEMS designers.
1,741 citations
References
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TL;DR: In this paper, a water-cooled integral heat sink for silicon integrated circuits has been designed and tested at a power density of 790 W/cm2, with a maximum substrate temperature rise of 71°C above the input water temperature.
Abstract: The problem of achieving compact, high-performance forced liquid cooling of planar integrated circuits has been investigated. The convective heat-transfer coefficient h between the substrate and the coolant was found to be the primary impediment to achieving low thermal resistance. For laminar flow in confined channels, h scales inversely with channel width, making microscopic channels desirable. The coolant viscosity determines the minimum practical channel width. The use of high-aspect ratio channels to increase surface area will, to an extent, further reduce thermal resistance. Based on these considerations, a new, very compact, water-cooled integral heat sink for silicon integrated circuits has been designed and tested. At a power density of 790 W/cm2, a maximum substrate temperature rise of 71°C above the input water temperature was measured, in good agreement with theory. By allowing such high power densities, the heat sink may greatly enhance the feasibility of ultrahigh-speed VLSI circuits.
4,214 citations
Book•
01 Jan 1965TL;DR: In this article, the authors propose formulas for stress and strain in the form of formulas for strain and stress, which are derived from the formula for stress-and-stress and strain.
Abstract: Formulas for stress and strain , Formulas for stress and strain , مرکز فناوری اطلاعات و اطلاع رسانی کشاورزی
1,830 citations
TL;DR: In this article, a miniature gas analysis system based on the principles of gas chromatography (GC) has been built in silicon using photolithography and chemical etching techniques, which allows size reductions of nearly three orders of magnitude compared to conventional laboratory instruments.
Abstract: A miniature gas analysis system has been built based on the principles of gas chromatography (GC). The major components are fabricated in silicon using photolithography and chemical etching techniques, which allows size reductions of nearly three orders of magnitude compared to conventional laboratory instruments. The chromatography system consists of a sample injection valve and a 1.5-m-long separating capillary column, which are fabricated on a substrate silicon wafer. The output thermal conductivity detector is separately batch fabricated and integrably mounted on the substrate wafer. The theory of gas chromatography has been used to optimize the performance of the sensor so that separations of gaseous hydrocarbon mixtures are performed in less than 10 s. The system is expected to find application in the areas of portable ambient air quality monitors, implanted biological experiments, and planetary probes.
1,414 citations
TL;DR: In this paper, the resonant gate transistor (RGT) is described as an electrostatically excited tuning fork employing field effect transistor readout, which can be batch-fabricated in a manner consistent with silicon technology.
Abstract: A device is described which permits high- Q frequency selection to be incorporated into silicon integrated circuits. It is essentially an electrostatically excited tuning fork employing field-effect transistor "readout." The device, which is called the resonant gate transistor (RGT), can be batch-fabricated in a manner consistent with silicon technology. Experimental RGT's with gold vibrating beams operating in the frequency range 1 kHz 0 Q 's as high as 500 and overall input-output voltage gain approaching + 10 dB have been constructed. The mechanical and electrical operation of the RGT is analyzed. Expressions are derived for both the beam and the detector characteristic voltage, the device center frequency, as well as the device gain and gain-stability product. A batch-fabrication procedure for the RGT is demonstrated and theory and experiment corroborated. Both single- and multiple-pole pair band pass filters are fabricated and discussed. Temperature coefficients of frequency as low as 90- 150 ppm/°C for the finished batch-fabricated device were demonstrated.
1,143 citations
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Abstract: Properties of electrolyte-semiconductor barriers are described, with emphasis on germanium. The use of these barriers in localizing electrolytic etching is discussed. Other localization techniques are mentioned. Electrolytes for etching germanium and silicon are given.
1,039 citations