Silicon carbide as a new MEMS technology
TL;DR: Silicon carbide (SiC) is a material with very attractive properties for microsystems applications as discussed by the authors, its mechanical strength, high thermal conductivity, ability to operate at high temperatures and extreme chemical inertness in several liquid electrolytes, make SiC an attractive candidate for MEMS applications, both as structural material and as coating layer.
Abstract: Silicon carbide (SiC) is a material with very attractive properties for microsystems applications Its mechanical strength, high thermal conductivity, ability to operate at high temperatures and extreme chemical inertness in several liquid electrolytes, make SiC an attractive candidate for MEMS applications, both as structural material and as coating layer The recently reported progress in material growth and processing techniques has strengthened the potential of this material for MEMS, especially for applications requiring operation at high temperature or in severe environments Examples of SiC microsensors and microstructures are given and interesting development in both material characteristics and micromachining processes are discussed
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TL;DR: A comprehensive overview of recent progress on the production and modification of polyvinylidene fluoride (PVDF) membranes for liquid-liquid or liquid-solid separation can be found in this article.
1,776 citations
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TL;DR: In this paper, the authors present a detailed overview of the history of the field of flow simulation for MEMS and discuss the current state-of-the-art in this field.
Abstract: Part I: Background and Fundamentals Introduction, Mohamed Gad-el-Hak, University of Notre Dame Scaling of Micromechanical Devices, William Trimmer, Standard MEMS, Inc., and Robert H. Stroud, Aerospace Corporation Mechanical Properties of MEMS Materials, William N. Sharpe, Jr., Johns Hopkins University Flow Physics, Mohamed Gad-el-Hak, University of Notre Dame Integrated Simulation for MEMS: Coupling Flow-Structure-Thermal-Electrical Domains, Robert M. Kirby and George Em Karniadakis, Brown University, and Oleg Mikulchenko and Kartikeya Mayaram, Oregon State University Liquid Flows in Microchannels, Kendra V. Sharp and Ronald J. Adrian, University of Illinois at Urbana-Champaign, Juan G. Santiago and Joshua I. Molho, Stanford University Burnett Simulations of Flows in Microdevices, Ramesh K. Agarwal and Keon-Young Yun, Wichita State University Molecular-Based Microfluidic Simulation Models, Ali Beskok, Texas A&M University Lubrication in MEMS, Kenneth S. Breuer, Brown University Physics of Thin Liquid Films, Alexander Oron, Technion, Israel Bubble/Drop Transport in Microchannels, Hsueh-Chia Chang, University of Notre Dame Fundamentals of Control Theory, Bill Goodwine, University of Notre Dame Model-Based Flow Control for Distributed Architectures, Thomas R. Bewley, University of California, San Diego Soft Computing in Control, Mihir Sen and Bill Goodwine, University of Notre Dame Part II: Design and Fabrication Materials for Microelectromechanical Systems Christian A. Zorman and Mehran Mehregany, Case Western Reserve University MEMS Fabrication, Marc J. Madou, Nanogen, Inc. LIGA and Other Replication Techniques, Marc J. Madou, Nanogen, Inc. X-Ray-Based Fabrication, Todd Christenson, Sandia National Laboratories Electrochemical Fabrication (EFAB), Adam L. Cohen, MEMGen Corporation Fabrication and Characterization of Single-Crystal Silicon Carbide MEMS, Robert S. Okojie, NASA Glenn Research Center Deep Reactive Ion Etching for Bulk Micromachining of Silicon Carbide, Glenn M. Beheim, NASA Glenn Research Center Microfabricated Chemical Sensors for Aerospace Applications, Gary W. Hunter, NASA Glenn Research Center, Chung-Chiun Liu, Case Western Reserve University, and Darby B. Makel, Makel Engineering, Inc. Packaging of Harsh-Environment MEMS Devices, Liang-Yu Chen and Jih-Fen Lei, NASA Glenn Research Center Part III: Applications of MEMS Inertial Sensors, Paul L. Bergstrom, Michigan Technological University, and Gary G. Li, OMM, Inc. Micromachined Pressure Sensors, Jae-Sung Park, Chester Wilson, and Yogesh B. Gianchandani, University of Wisconsin-Madison Sensors and Actuators for Turbulent Flows. Lennart Loefdahl, Chalmers University of Technology, and Mohamed Gad-el-Hak, University of Notre Dame Surface-Micromachined Mechanisms, Andrew D. Oliver and David W. Plummer, Sandia National Laboratories Microrobotics Thorbjoern Ebefors and Goeran Stemme, Royal Institute of Technology, Sweden Microscale Vacuum Pumps, E. Phillip Muntz, University of Southern California, and Stephen E. Vargo, SiWave, Inc. Microdroplet Generators. Fan-Gang Tseng, National Tsing Hua University, Taiwan Micro Heat Pipes and Micro Heat Spreaders, G. P. "Bud" Peterson, Rensselaer Polytechnic Institute Microchannel Heat Sinks, Yitshak Zohar, Hong Kong University of Science and Technology Flow Control, Mohamed Gad-el-Hak, University of Notre Dame) Part IV: The Future Reactive Control for Skin-Friction Reduction, Haecheon Choi, Seoul National University Towards MEMS Autonomous Control of Free-Shear Flows, Ahmed Naguib, Michigan State University Fabrication Technologies for Nanoelectromechanical Systems, Gary H. Bernstein, Holly V. Goodson, and Gregory L. Snider, University of Notre Dame Index
951 citations
03 Apr 2009
TL;DR: This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of Piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.
Abstract: Piezoresistive sensors are among the earliest micromachined silicon devices. The need for smaller, less expensive, higher performance sensors helped drive early micromachining technology, a precursor to microsystems or microelectromechanical systems (MEMS). The effect of stress on doped silicon and germanium has been known since the work of Smith at Bell Laboratories in 1954. Since then, researchers have extensively reported on microscale, piezoresistive strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors, including many commercially successful devices. In this paper, we review the history of piezoresistance, its physics and related fabrication techniques. We also discuss electrical noise in piezoresistors, device examples and design considerations, and alternative materials. This paper provides a comprehensive overview of integrated piezoresistor technology with an introduction to the physics of piezoresistivity, process and material selection and design guidance useful to researchers and device engineers.
789 citations
TL;DR: In this paper, the authors highlight the progress in three leading material platforms: diamond, silicon carbide and atomically thin semiconductors, with a focus on applications in quantum networks.
Abstract: A central goal in quantum optics and quantum information science is the development of quantum networks to generate entanglement between distributed quantum memories. Experimental progress relies on the quality and efficiency of the light–matter quantum interface connecting the quantum states of photons to internal states of quantum emitters. Quantum emitters in solids, which have properties resembling those of atoms and ions, offer an opportunity for realizing light–matter quantum interfaces in scalable and compact hardware. These quantum emitters require a material platform that enables stable spin and optical properties, as well as a robust manufacturing of quantum photonic circuits. Because no emitter system is yet perfect and different applications may require different properties, several light–matter quantum interfaces are being developed in various platforms. This Review highlights the progress in three leading material platforms: diamond, silicon carbide and atomically thin semiconductors. Atom-like quantum emitters in solids have emerged as promising building blocks for quantum information processing. In this Review, recent advances in three leading material platforms—diamond, silicon carbide and atomically thin semiconductors—are summarized, with a focus on applications in quantum networks
572 citations
TL;DR: In this article, the basic operation principle for MEMS with wide band gap semiconductors is described, and the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed.
Abstract: With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are attracting more attention. Polycrystalline SiC has first been implemented into Si micromachining techniques, mainly as etch stop and protective layers. However, the outstanding properties of wide band gap semiconductors offer many more possibilities for the implementation of new functionalities. Now, a variety of technologies for SiC and group III nitrides exist to fabricate fully wide band gap semiconductor based MEMS. In this paper we first review the basic technology (deposition and etching) for group III nitrides and SiC with a special focus on the fabrication of three-dimensional microstructures relevant for MEMS. The basic operation principle for MEMS with wide band gap semiconductors is described. Finally, the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed.
352 citations
References
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23 Nov 1998
TL;DR: In this paper, the authors present the basic interactions between flat surfaces, including the influence of Particles, Surface Steps, and Cavities, and thermal treatment of Bonded Wafer Pairs.
Abstract: Basics of Interactions Between Flat Surfaces. Influence of Particles, Surface Steps, and Cavities. Surface Preparation and Room-Temperature Wafer Bonding. Thermal Treatment of Bonded Wafer Pairs. Thinning Procedures. Electrical Properties of Bonding Interfaces. Stresses in Bonded Wafers. Bonding of Dissimilar Materials. Bonding of Structured Wafers. Mainstream Applications. Emerging and Future Applications. Index.
602 citations
TL;DR: In this paper, X-ray diffraction and transmission electron microscopy (TEM) data indicate that the films are singlecrystalline cubic polytype (3C) across the 4 in. diam (100) silicon wafers.
Abstract: Silicon carbide (SiC) films have been grown on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition, using propane, silane, and hydrogen. X‐ray photoelectron spectroscopy data confirm that the films are stoichiometric SiC, with no major impurities. X‐ray diffraction and transmission electron microscopy (TEM) data indicate that the films are single‐crystalline cubic polytype (3C) across the 4 in. substrates. With the exception of slip lines near the edge of the wafers, the films appear featureless when observed optically. The nitrogen concentration, as determined by secondary ion mass spectroscopy, is 4×1018 cm3. Cross‐sectional TEM images show a fairly rough, void‐free interface.
227 citations
TL;DR: In this paper, the properties of n-type beta-SiC relevant to piezoresistive devices, namely the gauge factor (GF) and temperature coefficient of resistivity (TCR), are characterized for several doping levels.
Abstract: SiC is currently being investigated for device applications involving high temperatures. The properties of n-type beta -SiC relevant to piezoresistive devices, namely the gauge factor (GF) and temperature coefficient of resistivity (TCR), are characterized for several doping levels. The maximum gauge factor observed was -31.8 for unintentionally doped (10/sup 16/-10/sup 17//cm/sup 3/) material. This gauge factor decreases with temperature to approximately half its room-temperature value at 450 degrees C. Unintentionally doped SiC has a roughly constant TCR of 0.72%/ degrees C over the range 25-800 degrees C and exhibits full impurity ionization at room temperature. Degenerately doped gauges (N/sub d/=10/sup 20//cm/sup 3/) exhibited a lower gauge factor (-12.7), with a more constant temperature behavior and a lower TCR (0.04%/ degrees C). The mechanisms of the piezoresistive effect and TCR in n-SiC are discussed, as well as their application towards sensors. >
141 citations
TL;DR: The development of SiC-based devices has been a subject of intense research for nearly 40 years as mentioned in this paper, and a significant amount of good, fundamental research was performed, but the development of commercially available SiCbased devices was retarded by low-quality bulk materials and inadequate epitaxial processes.
Abstract: The development of SiC for electronic applications has been a subject of intense research for nearly 40 years. Much of this research is motivated by the extraordinary combination of physical properties possessed by SiC, especially in the development of SiC-based devices for specific high-temperature, high-power, or high-frequency applications that are not suitable for Si- or GaAs-based devices. During the early years of SiC research and development, a significant amount of good, fundamental research was performed, but the development of commercially available SiC-based devices was retarded by low-quality bulk materials and inadequate epitaxial processes. In the late 1980s, research at academic institutions, such as North Carolina State University, and industrial laboratories, such as Westinghouse (now Northrup-Grumman), Advanced Technology Materials, Inc. (ATMI), and Cree Research, Inc., coupled with the commercial offering of highquality SiC wafers from Cree, created an opportunity for further advancement. Improvements in epitaxial processes and device processing strategies were also realized during this time. Together these factors have enabled the fabrication of high-quality device structures and have generated increased research and funding activities in SiC electronic devices.
125 citations
TL;DR: In this paper, the authors present an overview of recent developments in the SiC field, including the commercial availability of bulk SiC crystals, which is likely to establish SiC as a new wafer technology which allows many devices to be fabricated in analogy to known Si ones, in which the high-temperature limit for the operation of sensors and electronic circuits can be significantly extended.
Abstract: The paper presents an overview of recent developments in the SiC field. Within this field, two main streams are emerging: on the one hand, the commercial availability of bulk SiC crystals is likely to establish SiC as a new wafer technology which allows many devices to be fabricated in analogy to known Si ones. In this way, the high-temperature limit for the operation of sensors and electronic circuits can be significantly extended. Thin films of SiC, on the other hand, can be used as an add-on to the existing Si technology. Using such films, new possibilities emerge with regard to the fabrication of microsensors. Applications of thin-film SiC in optics, optoelectronics and micromachining are demonstrated.
82 citations