Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review
TL;DR: The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology, as well as MEMS devices.
Abstract: The significant advance of power electronics in today's market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC-DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.
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TL;DR: In this paper, the authors presented the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity, which achieved a Purcell factor of ∼50, which manifested as increased photoluminescence into the zero-phonon line.
Abstract: Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5000. Subsequent coupling to a single divacancy leads to a Purcell factor of ∼50, which manifests as increased photoluminescence into the zero-phonon line and a shortened excited-state lifetime. Additionally, we measure coherent control of the divacancy ground-state spin inside the cavity nanostructure and demonstrate extended coherence through dynamical decoupling. This spin-cavity system represents an advance toward scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits.
85 citations
TL;DR: This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD, a modified CVD process promising for nanotechnology fabrication techniques.
Abstract: A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.
31 citations
Cites background from "Silicon Carbide Converters and MEMS..."
...An exciting and expanding area of research in materials science involves the development of wide-bandgap (WBG) semiconductor materials that are used to fabricate micro/nanoelectromechanical systems (MEMS/NEMS) for harsh environment sensing applications [1,2]....
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TL;DR: A general review of the critical processing steps for manufacturing silicon carbide (SiC) MOSFETs and power applications based on SiC power devices are covered in this article . But, the reliability issues of SiC MOS FETs are also briefly summarized.
Abstract: Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.
27 citations
TL;DR: In this article , the authors presented the technological advancements of the electric vehicles (EVs) all over the world and focused on the utilization of the SiC devices for the EV applications.
Abstract: This paper presents the technological advancements of the electric vehicles (EVs) all over the world. The first emphasis is on the various types of the EVs along with the energy management strategies (EMSs). The EVs are equipped with different energy storage elements such as lithium-ion batteries, super capacitors (SCs) and fuel cells (FCs). Hence, it is important to optimize the power split between the various energy storage systems (ESSs) under the complex driving conditions. The second imperative aspect is the utilization of the energy efficient wide bandgap (WBG) semiconductor technology. The WBG materials present the superior properties like wide bandgap, high saturated drift velocity and high critical breakdown field. This has led a path for the development of SiC and GaN based power semiconductor devices (PSDs). However, this paper mainly focuses on the utilization of the SiC devices for the EV applications. The substantial features of the various SiC devices are presented along with the performance aggrandization methods. Furthermore, this paper presents the updated survey and various performance measures of the SiC based power converter topologies. It also emphasizes the necessity of energy optimization for the EV charging systems. On the other hand, the burning issues associated with the SiC power modules other than the power converters are explored in detail. This extensive literature survey provides insightness for the design and research engineers in view of fulfilling the research gaps between the current and the desired targets.
26 citations
TL;DR: In this paper, the Young's modulus of single-crystal diamond (SCD) was determined experimentally and theoretically by dynamic resonance frequency method based on SCD MEMS cantilevers and first-principles calculation.
12 citations
References
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TL;DR: Crosslinked polymer nanocomposites that contain boron nitride nanosheets have outstanding high-voltage capacitive energy storage capabilities at record temperatures and have been demonstrated to preserve excellent dielectric and capacitive performance after intensive bending cycles, enabling broader applications of organic materials in high-temperature electronics and energy storage devices.
Abstract: Dielectric materials, which store energy electrostatically, are ubiquitous in advanced electronics and electric power systems. Compared to their ceramic counterparts, polymer dielectrics have higher breakdown strengths and greater reliability, are scalable, lightweight and can be shaped into intricate configurations, and are therefore an ideal choice for many power electronics, power conditioning, and pulsed power applications. However, polymer dielectrics are limited to relatively low working temperatures, and thus fail to meet the rising demand for electricity under the extreme conditions present in applications such as hybrid and electric vehicles, aerospace power electronics, and underground oil and gas exploration. Here we describe crosslinked polymer nanocomposites that contain boron nitride nanosheets, the dielectric properties of which are stable over a broad temperature and frequency range. The nanocomposites have outstanding high-voltage capacitive energy storage capabilities at record temperatures (a Weibull breakdown strength of 403 megavolts per metre and a discharged energy density of 1.8 joules per cubic centimetre at 250 degrees Celsius). Their electrical conduction is several orders of magnitude lower than that of existing polymers and their high operating temperatures are attributed to greatly improved thermal conductivity, owing to the presence of the boron nitride nanosheets, which improve heat dissipation compared to pristine polymers (which are inherently susceptible to thermal runaway). Moreover, the polymer nanocomposites are lightweight, photopatternable and mechanically flexible, and have been demonstrated to preserve excellent dielectric and capacitive performance after intensive bending cycles. These findings enable broader applications of organic materials in high-temperature electronics and energy storage devices.
1,324 citations
"Silicon Carbide Converters and MEMS..." refers background in this paper
...7% at 500 MV/m, which is 30 times higher than the well-known polymer PI for high-temperature applications [58]....
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TL;DR: The analysis suggests that the dual (or triple) three-phase PMAC motor drive may be a favored choice for general aerospace applications, striking a balance between necessary redundancy and undue complexity, while maintaining a balanced operation following a failure.
Abstract: This paper presents an overview of motor drive technologies used for safety-critical aerospace applications, with a particular focus placed on the choice of candidate machines and their drive topologies. Aircraft applications demand high reliability, high availability, and high power density while aiming to reduce weight, complexity, fuel consumption, operational costs, and environmental impact. New electric driven systems can meet these requirements and also provide significant technical and economic improvements over conventional mechanical, hydraulic, or pneumatic systems. Fault-tolerant motor drives can be achieved by partitioning and redundancy through the use of multichannel three-phase systems or multiple single-phase modules. Analytical methods are adopted to compare caged induction, reluctance, and PM motor technologies and their relative merits. The analysis suggests that the dual (or triple) three-phase PMAC motor drive may be a favored choice for general aerospace applications, striking a balance between necessary redundancy and undue complexity, while maintaining a balanced operation following a failure. The modular single-phase approach offers a good compromise between size and complexity but suffers from high total harmonic distortion of the supply and high torque ripple when faulted. For each specific aircraft application, a parametrical optimization of the suitable motor configuration is needed through a coupled electromagnetic and thermal analysis, and should be verified by finite-element analysis.
779 citations
"Silicon Carbide Converters and MEMS..." refers background in this paper
...The DC secondary power source is neces electric aircraft in which the main power supply is an AC power source [67]....
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...The DC secondary power source is necessary for more electric aircraft in which the main power supply is an AC power source [67]....
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TL;DR: In this article, the authors examine the motivation for higher temperature operation, the packaging limitations even at 125/spl deg/C with newer package styles, and conclude with a review of challenges at both the semiconductor device and packaging level as temperatures push beyond 125 /spl deg /C.
Abstract: The underhood automotive environment is harsh and current trends in the automotive electronics industry will be pushing the temperature envelope for electronic components. The desire to place engine control units on the engine and transmission control units either on or in the transmission will push the ambient temperature above 125/spl deg/C. However, extreme cost pressures, increasing reliability demands (10 year/241 350 km) and the cost of field failures (recalls, liability, customer loyalty) will make the shift to higher temperatures occur incrementally. The coolest spots on engine and in the transmission will be used. These large bodies do provide considerable heat sinking to reduce temperature rise due to power dissipation in the control unit. The majority of near term applications will be at 150/spl deg/C or less and these will be worst case temperatures, not nominal. The transition to X-by-wire technology, replacing mechanical and hydraulic systems with electromechanical systems will require more power electronics. Integration of power transistors and smart power devices into the electromechanical actuator will require power devices to operate at 175/spl deg/C to 200/spl deg/C. Hybrid electric vehicles and fuel cell vehicles will also drive the demand for higher temperature power electronics. In the case of hybrid electric and fuel cell vehicles, the high temperature will be due to power dissipation. The alternates to high-temperature devices are thermal management systems which add weight and cost. Finally, the number of sensors in vehicles is increasing as more electrically controlled systems are added. Many of these sensors must work in high-temperature environments. The harshest applications are exhaust gas sensors and cylinder pressure or combustion sensors. High-temperature electronics use in automotive systems will continue to grow, but it will be gradual as cost and reliability issues are addressed. This work examines the motivation for higher temperature operation, the packaging limitations even at 125/spl deg/C with newer package styles and concludes with a review of challenges at both the semiconductor device and packaging level as temperatures push beyond 125/spl deg/C.
684 citations
"Silicon Carbide Converters and MEMS..." refers background in this paper
...The ambient temperature is expected to reach 150 ◦C since the compressor should be installed close to the gas reservoir, and the system is expected to work reliably under an ambient temperature of 225 ◦C with the lifetime of 5 years [7]....
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TL;DR: Partial transient liquid phase (PTLP) bonding as discussed by the authors is a variant of TLP bonding that is typically used to join ceramics and has found many applications, most notably the joining and repair of Ni-based superalloy components.
Abstract: Transient liquid phase (TLP) bonding is a relatively new bonding process that joins materials using an interlayer. On heating, the interlayer melts and the interlayer element (or a constituent of an alloy interlayer) diffuses into the substrate materials, causing isothermal solidification. The result of this process is a bond that has a higher melting point than the bonding temperature. This bonding process has found many applications, most notably the joining and repair of Ni-based superalloy components. This article reviews important aspects of TLP bonding, such as kinetics of the process, experimental details (bonding time, interlayer thickness and format, and optimal bonding temperature), and advantages and disadvantages of the process. A wide range of materials that TLP bonding has been applied to is also presented. Partial transient liquid phase (PTLP) bonding is a variant of TLP bonding that is typically used to join ceramics. PTLP bonding requires an interlayer composed of multiple layers; the most common bond setup consists of a thick refractory core sandwiched by thin, lower-melting layers on each side. This article explains how the experimental details and bonding kinetics of PTLP bonding differ from TLP bonding. Also, a range of materials that have been joined by PTLP bonding is presented.
453 citations
"Silicon Carbide Converters and MEMS..." refers background in this paper
...Due to the disadvantages of time-consuming nature and required special equipment, some research on high-throughput solutions is under way [35]....
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TL;DR: This literature work seeks to review the numerous research attempts thus far for high temperature die attach materials on wide band gap materials of silicon carbide, gallium nitride and diamond, document their successes, concerns and application possibilities, all of which are essential for highTemperature reliability.
Abstract: The need for high power density and high temperature capabilities in today's electronic devices continues to grow. More robust devices with reliable and stable functioning capabilities are needed, for example in aerospace and automotive industries as well as sensor technology. These devices need to perform under extreme temperature conditions, and not show any deterioration in terms of switching speeds, junction temperatures, and power density, and so on. While the bulk of research is performed to source and manufacture these high temperature devices, the device interconnect technology remains under high focus for packaging. The die attach material has to withstand high temperatures generated during device functioning and also cope with external conditions which will directly determine how well the device performs in the field. This literature work seeks to review the numerous research attempts thus far for high temperature die attach materials on wide band gap materials of silicon carbide, gallium nitride and diamond, document their successes, concerns and application possibilities, all of which are essential for high temperature reliability.
405 citations
"Silicon Carbide Converters and MEMS..." refers background in this paper
...The mechanical properties such as the modulus of elasticity, ductility, and yield strength are of equal importance [94]....
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