Silicon carbide power device development for industrial markets
01 Dec 2014-
TL;DR: The 4H-SiC MOSFET with a specific on-resistance (R ON,SP ) of 5 mΩcm2 for a 1200 V rating was reported in this article.
Abstract: SiC power devices have the ability to greatly outperform their Silicon counterparts. SiC material quality and cost issues have largely been overcome, allowing SiC to start competing directly with more traditional Si devices. 150 mm substrates and epitaxy are now commercially available. Commercially released 4H-SiC MOSFETs with a specific on-resistance (R ON,SP ) of 5 mΩcm2 for a 1200 V rating are now available, and research has further optimized the device design and fabrication processes to greatly expand the voltage ratings from 900 V up to 15 kV for a much wider range of high-power, high-frequency energy-conversion applications. Performance for voltage ratings from 900 V up to 15 kV have been achieved with a R ON,SP as low as 2.3 mΩcm2 for a breakdown voltage (BV) of 1230 V and 900 V-rating, 2.7 mΩcm2 for a BV of 1620 V and 1200 V-rating, 10.6 mΩcm2 for a BV of 4160 V and 3300 V-rating, 123 mΩcm2 for a BV of 12 kV and 10 kV-rating, and 208 mΩcm2 for a BV of 15.5 kV and 15 kV-rating. All of these devices exhibit very high frequency switching performance over silicon IGBTs. For even higher voltages, bipolar devices in SiC have been demonstrated from 15 kV up to 27 kV. SiC GTOs have been shown up to 22 kV with 200 A capability. SiC n-IGBTs are reported up to 27 kV, with 20 A capability. This is the highest voltage semiconductor device reported to date.
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TL;DR: The technology progress of SiC power devices and their emerging applications are reviewed and the design challenges and future trends are summarized.
Abstract: Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.
806 citations
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...1 in comparison with Si [3]–[5]....
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08 Jan 2021
TL;DR: The electric drive technology trends for passenger electric and hybrid EVs with commercially available solutions in terms of materials, electric machine and inverter designs, maximum speed, component cooling, power density, and performance are discussed.
Abstract: The transition to electric road transport technologies requires electric traction drive systems to offer improved performances and capabilities, such as fuel efficiency (in terms of MPGe, i.e., miles per gallon of gasoline-equivalent), extended range, and fast-charging options. The enhanced electrification and transformed mobility are translating to a demand for higher power and more efficient electric traction drive systems that lead to better fuel economy for a given battery charge. To accelerate the mass-market adoption of electrified transportation, the U.S. Department of Energy (DOE), in collaboration with the automotive industry, has announced the technical targets for light-duty electric vehicles (EVs) for 2025. This article discusses the electric drive technology trends for passenger electric and hybrid EVs with commercially available solutions in terms of materials, electric machine and inverter designs, maximum speed, component cooling, power density, and performance. The emerging materials and technologies for power electronics and electric motors are presented, identifying the challenges and opportunities for even more aggressive designs to meet the need for next-generation EVs. Some innovative drive and motor designs with the potential to meet the DOE 2025 targets are also discussed.
164 citations
Cites background from "Silicon carbide power device develo..."
...5, and 10 kV, is not yet commercially available from multiple suppliers due to market challenges but are presented as promising solutions for high-voltage systems [19]....
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TL;DR: In this article, power electronic transformer (PET)-based railway traction systems are comprehensively reviewed according to the unique application features and requirements, and the key challenges and opportunities are identified and discussed.
Abstract: In this paper, power electronic transformer (PET)-based railway traction systems are comprehensively reviewed according to the unique application features and requirements. By comparing PET and conventional line frequency transformer (LFT)-based systems, their pros and cons are summarized. By further reviewing all kinds of PET-based designs from the early concepts to the latest ones in the order of their publication dates, the developing trends are highlighted. By synthetically considering the requirements and the state of the art, the key challenges and opportunities are identified and discussed. It shows that although PET-based systems are still developing and far from mature, they are already superior to LFT-based systems in terms of system weight, efficiency, and functionalities especially for 15-kV/16.7-Hz applications. With the advancements on wide bandgap power devices, medium frequency transformers, and converters, PET systems will be even more promising and available for all types of railway tractions in the near future.
160 citations
31 Dec 2016
TL;DR: In this paper, the benefits of silicon carbide (SiC) based power electronics for converters and systems, as well as their ability in enabling new applications are discussed, and challenges and research trends on the design and application of SiC power electronics are also discussed.
Abstract: This paper overviews the silicon carbide (SiC) technology. The focus is on the benefits of SiC based power electronics for converters and systems, as well as their ability in enabling new applications. The challenges and research trends on the design and application of SiC power electronics are also discussed
117 citations
Cites background from "Silicon carbide power device develo..."
...Currently, 150 mm or 6 inch SiC wafers are commercially available [53]....
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19 Nov 2015
TL;DR: The focus is on the emerging wide bandgap semiconductor devices, i.e., silicon carbide (SiC) and gallium nitride (GaN) devices, and their potential impact on future shipboard power conversion and drives.
Abstract: This paper presents some of the key advances in power electronics pertaining to shipboard electric power system applications. The focus is on the emerging wide bandgap semiconductor devices, i.e., silicon carbide (SiC) and gallium nitride (GaN) devices, and their potential impact on future shipboard power conversion and drives. Their benefits on power converter efficiency and power density are explained through a case study of a medium-voltage (MV) class motor drive system. SiC and GaN also enable new applications, including solid-state transformers, while posing new design and application challenges such as gate drive, protection, and interaction with loads. In addition to device related topics, this paper also overviews other important advances in power electronics, including topology, control, passive components, thermal management, filters, and packaging. The significance of power electronics building blocks (PEBBs) concept for shipboard power system development is discussed. Recognizing the growing complexity of shipboard power systems, some system-level technologies related to future MV direct current (dc) system architecture are highlighted.
116 citations
References
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TL;DR: In this article, a hole to electron ionization coefficient ratio of up to 50 was observed for 4H SiC. This was attributed to the discontinuity of the conduction band for the direction along the c axis.
Abstract: Epitaxial p-n diodes in 4H SiC are fabricated showing a good uniformity of avalanche multiplication and breakdown. Peripheral breakdown is overcome using the positive angle beveling technique. Photomultiplication measurements were performed to determine electron and hole ionization rates. For the electric field parallel to the c-axis impact ionization is strongly dominated by holes. A hole to electron ionization coefficient ratio of up to 50 is observed. It is attributed to the discontinuity of the conduction band of 4H SiC for the direction along the c axis. Theoretical values of critical fields and breakdown voltages in 4H SiC are calculated using the ionization rates obtained.
394 citations
TL;DR: In this article, a block voltage of 27 kV, 20 A 4H-SiC n-IGBTs was achieved by utilizing thick (210 μm and 230 μm), lightly doped N-drift layers with an appropriate edge termination.
Abstract: In this work, we report our recently developed 27 kV, 20 A 4H-SiC n-IGBTs. Blocking voltages exceeding 24 kV were achieved by utilizing thick (210 μm and 230 μm), lightly doped N-drift layers with an appropriate edge termination. Prior to the device fabrication, an ambipolar carrier lifetime of greater than 10 μs was measured on both drift regions by the microwave photoconductivity decay (μPCD) technique. The SiC n-IGBTs exhibit an on-state voltage of 11.8 V at a forward current of 20 A and a gate bias of 20 V at 25 °C. The devices have a chip size of 0.81 cm2 and an active conducting area of 0.28 cm2. Double-pulse switching measurements carried out at up to 16 kV and 20 A demonstrate the robust operation of the device under hard-switched conditions; coupled thermal analysis indicates that the devices can operate at a forward current of up to 10 A in a hard-switched environment at a frequency of more than 3 kHz and a bus voltage of 14 kV.
122 citations
10 Apr 2011
TL;DR: In this paper, the extension of SiC power technology to higher voltage 10 kV/10 A SiC DMOSFETs and SiC JBS diodes is discussed.
Abstract: In this paper, the extension of SiC power technology to higher voltage 10 kV/10 A SiC DMOSFETs and SiC JBS diodes is discussed. A new 10 kV/120 A SiC power module using these 10 kV SiC devices is also described which enables a compact 13.8 kV to 465/√3 solid state power substation (SSPS) rated at 1 MVA.
103 citations
"Silicon carbide power device develo..." refers background in this paper
...In 2011, we also demonstrated 10 kV/10 A SiC power MOSFETs that can be switched efficiently at 20 kHz and above [1]....
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15 Jun 2014
TL;DR: In this article, a thermal oxidation process was applied to enhance the carrier lifetime prior to the device fabrication, and the lifetime enhanced devices displayed nearly 1 V lower forward voltage drop with little increase in switching energy and no degradation of static blocking.
Abstract: In this paper, we report our recently developed large area 4H-SiC n-IGBTs that have a chip size of 1 cm 2 and an active conducting area of 0.37 cm 2 . A blocking voltage of 22.6 kV has been demonstrated with a leakage current of 9 μA at a gate bias of 0 V at room-temperature. This is the highest breakdown voltage of a single MOS-controlled semiconductor switch reported to date. To improve the conductivity modulation and lower the conduction losses during the on-state, a thermal oxidation process was applied to enhance the carrier lifetime prior to the device fabrication. Compared to the devices that did not receive this lifetime enhancement process, the lifetime enhanced devices displayed nearly 1 V lower forward voltage drop with little increase in switching energy and no degradation of static blocking characteristics. A specific differential on-resistance of 55 mΩ-cm 2 at 20 A and 125 °C was achieved, suggesting that bipolar power devices with thick drift regions can benefit from further enhancement of the ambipolar carrier lifetime.
73 citations
"Silicon carbide power device develo..." refers methods in this paper
...Prior to device fabrication, a lifetime enhancement procedure consisting of 15 hours of thermal oxidation at 1300 C was performed to increase the as-grown drift ambipolar lifetime from less than * '# # ' * 4 5 ' % #" ' $ " 1 ' # be found in reference [15]....
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TL;DR: In this paper, the authors have observed instability in the threshold voltage, VT, of SiC metal-oxide semiconductor field effect transistors (MOSFETs) due to gate bias stressing.
Abstract: We have observed instability in the threshold voltage, VT, of SiC metal-oxide semiconductor field-effect transistors (MOSFETs) due to gate-bias stressing. This effect has routinely been observed by us in all 4H and 6H SiC MOSFETs from three different manufacturers—even at room temperature. A positive-bias stress, applying an electric field of about 1 to 2 MV/cm across the gate oxide, for 3 minutes followed by a negative-bias stress for another 3 minutes typically results in a shift of the ID-VGS current-voltage characteristic in the range of 0.25 to 0.5 V and is repeatable. We speculate that this effect is due to the presence of a large number of near-interfacial oxide traps that presumably lie in the oxide transition region that extends several nm into the oxide from the SiC interface, caused by the presence of C and strained SiO2. This instability is consistent with charge tunneling in and out of these near-interfacial oxide traps, which in irradiated Si MOSFETs has been attributed to border traps. Also consistent with charge tunneling is the observed linear increase in the magnitude of the SiC VT instability with log (time).
57 citations