Silicon-on-insulator 'gate-all-around device'
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Cites background from "Silicon-on-insulator 'gate-all-arou..."
...29(a)] reported in the literature so far [54], [55] has a self-aligned bottom gate....
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Cites background from "Silicon-on-insulator 'gate-all-arou..."
..., relaxed body thickness yet gaining similar short-channel control as thin-body double-sided FinFET [7], [8], excellent transconductance [12], and drain-induced bar-...
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...As the name suggests, the GAA FET features the gate fully surrounding the channel body and thus providing the best possible electrostatic control [12]–[16]....
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...Among the many innovative approaches, double-gated FinFET [3], [4], tri-gated [5], Π-gated [6], Ω-gated [7], nanowire body [8]–[11], and gateall-around (GAA) [12]–[14] MOSFETs have attracted much...
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References
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