Journal Article•
Silicon photonics
TL;DR: The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates as mentioned in this paper, however, any optical solution must be based on low-cost technologies if it is to be applied to the mass market.
Abstract: The silicon chip has been the mainstay of the electronics industry for the last 40 years and has revolutionized the way the world operates. Today, a silicon chip the size of a fingernail contains nearly 1 billion transistors and has the computing power that only a decade ago would take up an entire room of servers. As the relentless pursuit of Moore's law continues, and Internet-based communication continues to grow, the bandwidth demands needed to feed these devices will continue to increase and push the limits of copper-based signaling technologies. These signaling limitations will necessitate optical-based solutions. However, any optical solution must be based on low-cost technologies if it is to be applied to the mass market. Silicon photonics, mainly based on SOI technology, has recently attracted a great deal of attention. Recent advances and breakthroughs in silicon photonic device performance have shown that silicon can be considered a material onto which one can build optical devices. While significant efforts are needed to improve device performance and commercialize these technologies, progress is moving at a rapid rate. More research in the area of integration, both photonic and electronic, is needed. The future is looking bright. Silicon photonics could provide low-cost opto-electronic solutions for applications ranging from telecommunications down to chip-to-chip interconnects, as well as emerging areas such as optical sensing technology and biomedical applications. The ability to utilize existing CMOS infrastructure and manufacture these silicon photonic devices in the same facilities that today produce electronics could enable low-cost optical devices, and in the future, revolutionize optical communications
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TL;DR: An overview of the current state-of-the-art in silicon nanophotonic ring resonators is presented in this paper, where the basic theory of ring resonance is discussed and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes.
Abstract: An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.
1,989 citations
10 Jun 2009
TL;DR: The current performance and future demands of interconnects to and on silicon chips are examined and the requirements for optoelectronic and optical devices are project if optics is to solve the major problems of interConnects for future high-performance silicon chips.
Abstract: We examine the current performance and future demands of interconnects to and on silicon chips. We compare electrical and optical interconnects and project the requirements for optoelectronic and optical devices if optics is to solve the major problems of interconnects for future high-performance silicon chips. Optics has potential benefits in interconnect density, energy, and timing. The necessity of low interconnect energy imposes low limits especially on the energy of the optical output devices, with a ~ 10 fJ/bit device energy target emerging. Some optical modulators and radical laser approaches may meet this requirement. Low (e.g., a few femtofarads or less) photodetector capacitance is important. Very compact wavelength splitters are essential for connecting the information to fibers. Dense waveguides are necessary on-chip or on boards for guided wave optical approaches, especially if very high clock rates or dense wavelength-division multiplexing (WDM) is to be avoided. Free-space optics potentially can handle the necessary bandwidths even without fast clocks or WDM. With such technology, however, optics may enable the continued scaling of interconnect capacity required by future chips.
1,959 citations
TL;DR: The latest progress in graphene photonics, plasmonics, and broadband optoelectronic devices is reviewed, with particular emphasis on the ability to integrate graphenePhotonics onto the silicon platform to afford broadband operation in light routing and amplification.
Abstract: Graphene has been hailed as a wonderful material in electronics, and recently, it is the rising star in photonics, as well. The wonderful optical properties of graphene afford multiple functions of signal emitting, transmitting, modulating, and detection to be realized in one material. In this paper, the latest progress in graphene photonics, plasmonics, and broadband optoelectronic devices is reviewed. Particular emphasis is placed on the ability to integrate graphene photonics onto the silicon platform to afford broadband operation in light routing and amplification, which involves components like polarizer, modulator, and photodetector. Other functions like saturable absorber and optical limiter are also reviewed.
1,778 citations
TL;DR: The demonstration of a continuous-wave silicon Raman laser is demonstrated and it is shown that TPA-induced FCA in silicon can be significantly reduced by introducing a reverse-biased p-i-n diode embedded in a silicon waveguide.
Abstract: Achieving optical gain and/or lasing in silicon has been one of the most challenging goals in silicon-based photonics because bulk silicon is an indirect bandgap semiconductor and therefore has a very low light emission efficiency. Recently, stimulated Raman scattering has been used to demonstrate light amplification and lasing in silicon. However, because of the nonlinear optical loss associated with two-photon absorption (TPA)-induced free carrier absorption (FCA), until now lasing has been limited to pulsed operation. Here we demonstrate a continuous-wave silicon Raman laser. Specifically, we show that TPA-induced FCA in silicon can be significantly reduced by introducing a reverse-biased p-i-n diode embedded in a silicon waveguide. The laser cavity is formed by coating the facets of the silicon waveguide with multilayer dielectric films. We have demonstrated stable single mode laser output with side-mode suppression of over 55 dB and linewidth of less than 80 MHz. The lasing threshold depends on the p-i-n reverse bias voltage and the laser wavelength can be tuned by adjusting the wavelength of the pump laser. The demonstration of a continuous-wave silicon laser represents a significant milestone for silicon-based optoelectronic devices.
1,267 citations
TL;DR: An electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding is reported.
Abstract: An electrically pumped light source on silicon is a key element needed for photonic integrated circuits on silicon. Here we report an electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active material during fabrication via wafer bonding. This laser runs continuous-wave (c.w.) with a threshold of 65 mA, a maximum output power of 1.8 mW with a differential quantum efficiency of 12.7 % and a maximum operating temperature of 40 degrees C. This approach allows for 100's of lasers to be fabricated in one bonding step, making it suitable for high volume, low-cost, integration. By varying the silicon waveguide dimensions and the composition of the III-V layer, this architecture can be extended to fabricate other active devices on silicon such as optical amplifiers, modulators and photo-detectors.
1,257 citations
References
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TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Abstract: A numerical Kramers-Kronig analysis is used to predict the refractive-index perturbations produced in crystalline silicon by applied electric fields or by charge carriers. Results are obtained over the 1.0-2.0 \mu m optical wavelength range. The analysis makes use of experimental electroabsorption spectra and impurity-doping spectra taken from the literature. For electrorefraction at the indirect gap, we find \Delta n = 1.3 \times 10^{5} at \lambda = 1.07 \mu m when E = 10^{5} V/cm, while the Kerr effect gives \Delta n = 10^{-6} at that field strength. The charge-carrier effects are larger, and a depletion or injection of 1018carriers/cm3produces an index change of \pm1.5 \times 10^{-3} at \lambda = 1.3 \mu m.
2,502 citations
"Silicon photonics" refers background in this paper
...This leaves the plasma dispersion effect as the only viable mechanism to achieve fast modulation [32]....
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TL;DR: Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures, and here a high-speed electro-optical modulator in compact silicon structures is experimentally demonstrated.
Abstract: Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed. The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of silicon low-loss waveguides, light emitters, amplifiers and lasers approach this goal, but a small silicon electro-optic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here we experimentally demonstrate a high-speed electro-optical modulator in compact silicon structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the silicon and also enables high-speed operation. The modulator is 12 micrometres in diameter, three orders of magnitude smaller than previously demonstrated. Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures.
2,336 citations
"Silicon photonics" refers methods in this paper
...Free-carrier modulation of Raman gain has been proposed and demonstrated as a means to achieve optical modulation [46]....
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TL;DR: It is demonstrated that light amplification is possible using silicon itself, in the form of quantum dots dispersed in a silicon dioxide matrix, which opens a route to the fabrication of a silicon laser.
Abstract: Adding optical functionality to a silicon microelectronic chip is one of the most challenging problems of materials research. Silicon is an indirect-bandgap semiconductor and so is an inefficient emitter of light. For this reason, integration of optically functional elements with silicon microelectronic circuitry has largely been achieved through the use of direct-bandgap compound semiconductors. For optoelectronic applications, the key device is the light source--a laser. Compound semiconductor lasers exploit low-dimensional electronic systems, such as quantum wells and quantum dots, as the active optical amplifying medium. Here we demonstrate that light amplification is possible using silicon itself, in the form of quantum dots dispersed in a silicon dioxide matrix. Net optical gain is seen in both waveguide and transmission configurations, with the material gain being of the same order as that of direct-bandgap quantum dots. We explain the observations using a model based on population inversion of radiative states associated with the Si/SiO2 interface. These findings open a route to the fabrication of a silicon laser.
2,204 citations
"Silicon photonics" refers background in this paper
...Hence, achieving carrier densities of 1019 cm−3 and beyond will not be practical as it will require excessively large current densities....
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TL;DR: An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.
Abstract: Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.
1,612 citations
TL;DR: The experimental demonstration of fast all-optical switching on silicon using highly light-confining structures to enhance the sensitivity of light to small changes in refractive index and confirm the recent theoretical prediction of efficient optical switching in silicon using resonant structures.
Abstract: Photonic circuits, in which beams of light redirect the flow of other beams of light, are a long-standing goal for developing highly integrated optical communication components1,2,3. Furthermore, it is highly desirable to use silicon—the dominant material in the microelectronic industry—as the platform for such circuits. Photonic structures that bend, split, couple and filter light have recently been demonstrated in silicon4,5, but the flow of light in these structures is predetermined and cannot be readily modulated during operation. All-optical switches and modulators have been demonstrated with III–V compound semiconductors6,7, but achieving the same in silicon is challenging owing to its relatively weak nonlinear optical properties. Indeed, all-optical switching in silicon has only been achieved by using extremely high powers8,9,10,11,12,13,14,15 in large or non-planar structures, where the modulated light is propagating out-of-plane. Such high powers, large dimensions and non-planar geometries are inappropriate for effective on-chip integration. Here we present the experimental demonstration of fast all-optical switching on silicon using highly light-confining structures to enhance the sensitivity of light to small changes in refractive index. The transmission of the structure can be modulated by up to 94% in less than 500 ps using light pulses with energies as low as 25 pJ. These results confirm the recent theoretical prediction16 of efficient optical switching in silicon using resonant structures.
1,506 citations