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Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
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In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
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Control of porous Si photoluminescence through dry oxidation
TL;DR: In this paper, the applicability of thermal oxidation to control the photoluminescence (PL) from quantum-sized structures in porous silicon has been demonstrated without a long time hydrofluoric acid (HF) immersion.
Journal ArticleDOI
Temperature effect on the roughness of the formation interface of p-type porous silicon
TL;DR: In this article, the influence of the anodization temperature on the formation of porous Si for different current intensities was studied and the porosity, growth rate, luminescence, refractive index, and porous Si/bulk Si interface roughness was obtained for low temperature anodisation.
Journal ArticleDOI
A review on electronic and optical properties of silicon nanowire and its different growth techniques
TL;DR: Electronic and optical properties of Silicon Nanowire (SiNW) obtained from theoretical studies and experimental approaches have been reviewed and three thermodynamic aspects of SiNW growth via the vapor–liquid–solid mechanism are presented and discussed.
Journal ArticleDOI
The room temperature oxidation of porous silicon
TL;DR: In this paper, the room temperature oxidation of porous silicon was studied using isothermal methods and it was found that the oxidation was dependent on the type of the porous silicon and the reason for differences in reactions is discussed.
Journal ArticleDOI
Luminescence and Scintillation Properties at the Nanoscale
TL;DR: In this article, a review of the luminescence and scintillation properties of nanoparticles (NP), particularly doped insulators, is presented, and the potentiality to grow transparent bulk materials based on small Nps agglomeration via soft chemistry route is presented.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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