Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
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TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
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Journal ArticleDOI
Surface modification and laser pulse length effects on internal energy transfer in DIOS.
TL;DR: Most of the differences between MALDI and DIOS described here are compatible with the different dimensionality of the plume expansion and the differences in the activation energy of desorption due to surface modifications.
Patent
Method of making silicon quantum wires
TL;DR: In this article, a semiconductor wafer (14) is anodized in 20 % aqueous hydrofluoric acid to produce a layer (5) microns thick with 70 % porosity and good crystallinity.
Journal ArticleDOI
Phonon confinement effect of silicon nanowires synthesized by laser ablation
TL;DR: In this article, a gradual downshift and asymmetric broadening of the Si optical phonon peak were observed by Raman scattering measurements of continuously thermally oxidized silicon nanowires (SiNWs) synthesized by laser ablation.
Journal ArticleDOI
Ex situ prepared Si nanocrystals embedded in silica glass: Formation and characterization
TL;DR: In this paper, the authors presented an alternative approach for the fabrication of silicon nanocrystals (Si-nc) prepared ex situ of the silicon dioxide (SiO2) host matrix.
Journal ArticleDOI
Electrochemical stabilization of porous silicon multilayers for sensing various chemical compounds
TL;DR: In this paper, a porous silicon rugate filter is fabricated and investigated for their ability to sense chemical species, and the durability of the filter is tested by allowing the structure to undergo many cycles of adsorption and desorption of vapor-phase ethanol molecules.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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