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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

03 Sep 1990-Applied Physics Letters (American Institute of Physics)-Vol. 57, Iss: 10, pp 1046-1048
TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract: Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.
Citations
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Journal ArticleDOI
TL;DR: In this article, the optical and structural characteristics of various porous Si samples have been correlated, and the optical absorption edge exhibits a strong inverse correlation that is in excellent agreement with theoretical predictions for the optical gap in Si spheres or quantum dots.

66 citations

Journal ArticleDOI
TL;DR: Porous silicon has successfully developed porous silicon as a carrier material for improved parenteral peptide delivery, a novel material in peptides delivery that possesses some unique properties.
Abstract: Peptides have long been recognized as a promising group of therapeutic substances to treat various diseases. Delivery systems for peptides have been under development since the discovery of insulin for the treatment of diabetes. The challenge of using peptides as drugs arises from their poor bioavailability resulting from the low permeability of biological membranes and their instability. Currently, subcutaneous injection is clinically the most common administration route for peptides. This route is cost-effective and suitable for self-administration, and the development of appropriate dosing equipment has made performing the repeated injections relatively easy; however, only few clinical subcutaneous peptide delivery systems provide sustained peptide release. As a result, frequent injections are needed, which may cause discomfort and additional risks resulting from a poor administration technique. Controlled peptide delivery systems, able to provide required therapeutic plasma concentrations over an extended period, are needed to increase peptide safety and patient compliancy. In this review, we summarize the current peptidergic drugs, future developments, and parenteral peptide delivery systems. Special emphasis is given to porous silicon, a novel material in peptide delivery. Biodegradable and biocompatible porous silicon possesses some unique properties, such as the ability to carry exceptional high peptide payloads and to modify peptide release extensively. We have successfully developed porous silicon as a carrier material for improved parenteral peptide delivery. Nanotechnology, with its different delivery systems, will enable better use of peptides in several therapeutic applications in the near future.

66 citations


Cites background from "Silicon quantum wire array fabricat..."

  • ...Another beneficial property of PSi is the possibility to make it photoluminescent (Canham, 1990)....

    [...]

Journal ArticleDOI
TL;DR: In this article, the Davies-Bennett model quantitatively describes the induced light scattering in the dissolution front observed during the formation of porous silicon, leading finally to layer thickness inhomogeneities.
Abstract: We present a study of the fluctuations in the dissolution front observed during the formation of porous silicon, leading finally to layer thickness inhomogeneities. Two types of fluctuations were revealed, one at the millimeter scale (waviness) and the other one at the micrometer scale (roughness). Root mean square amplitudes are comparable. In both cases fluctuations of the dissolution velocity can be invoked and we discuss their dependence on the current density and viscosity of the solution. The large scale fluctuations are attributed to planar resistivity fluctuations in the wafer. The second type of fluctuation displays a typical spatial periodicity comparable to the wavelength of the light so that a statistical characterization can be performed by optical measurements. The Davies–Bennett model quantitatively describes the induced light scattering. Remarkably, these fluctuations increase linearly with the layer thickness up to a critical value where a saturation regime is observed. In order to explain this behavior, we show the importance of the initial surface state of the wafer and of the porous medium.

66 citations

Journal ArticleDOI
TL;DR: In this paper, the sign and magnitude of third-order nonlinear susceptibility X(3) of Si-nc are measured by the Z-scan method, and a correlation has been made between X( 3), nanocrystalline size, linear refractive index and optical band gap.
Abstract: We provide a systematic study on the linear and nonlinear optical properties of silicon nanocrystals (Si-nc) grown by plasma-enhanced chemical vapour deposition (PECVD). Linear optical properties, namely absorption, emission and refractive indices are reported. The sign and magnitude of both real and imaginary parts of third-order nonlinear susceptibility X(3) of Si-nc are measured by the Z-scan method. Closed aperture Z-scan reveals a positive nonlinearity for all the samples. From the open aperture measurements, nonlinear absorption coefficients are evaluated and attributed to two-photon absorption. Absolute values of X(3) are in the order of 10-9 esu and show systematic correlation with the Si-nc size, due to quantum confinement related effects. A correlation has been made between X(3), nanocrystalline size, linear refractive index and optical band gap.

66 citations

Journal ArticleDOI
TL;DR: In this article, the authors reported on the intense broadband photoluminescence (PL) emission from the ZnO/porous silicon nanocomposite films, which could be used as a source of broadband luminescence across most of the visible spectrum.
Abstract: This paper reports on the intense broadband photoluminescence (PL) emission from the ZnO/porous silicon nanocomposite films. The porous silicon (PS) samples were formed by electrochemical anodization on p-type (1 0 0) silicon wafer and ZnO thin films are deposited by the sol–gel spin coating technique in the pores of PS. The average pore size of PS samples is 30 nm. The glancing angle x-ray diffraction pattern of as-deposited and annealed films shows that the quality of (0 0 2) oriented ZnO nanocrystallites improves with annealing at moderate temperature and are polycrystalline in nature. The average crystallize size was found to be 40 nm. The surface topography of the ZnO/PS nanocomposite films has been studied using atomic force microscopy. The mechanism and interpretation of broadband PL from 400 to 900 nm of the nanocomposites are discussed using oxygen-bonding and native defects models for PS and ZnO, respectively. These nanocomposite films could be used as a source of broadband luminescence across most of the visible spectrum.

66 citations

References
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Journal ArticleDOI
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Abstract: Properties of electrolyte-semiconductor barriers are described, with emphasis on germanium. The use of these barriers in localizing electrolytic etching is discussed. Other localization techniques are mentioned. Electrolytes for etching germanium and silicon are given.

1,039 citations

Journal ArticleDOI
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Abstract: We have found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive. With preparation in this manner, the surface-recombination velocity on Si111g is only 0.25 cm/sec, which is the lowest value ever reported for any semiconductor. Multiple-internal-reflection infrared spectroscopy shows that the surface appears to be covered by covalent Si-H bonds, leaving virtually no surface dangling bonds to act as recombinatiuon centers. These results have implications for the ultimate efficiency of silicon solar cells.

910 citations

Journal ArticleDOI
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Abstract: Multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces. These very inert surfaces are found to be almost completely covered by atomic hydrogen. Results using polarized radiation on both flat and stepped Si(111) and Si(100) surfaces reveal the presence of many chemisorption sites (hydrides) that indicate that the surfaces are microscopically rough, although locally ordered. In particular, the HF‐prepared Si(100) surface appears to have little in common with the smooth H‐saturated Si(100) surface prepared in ultrahigh vacuum.

588 citations

Journal ArticleDOI
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
Abstract: Hydrogen desorption kinetics from monohydride and dihydride species on crystalline-silicon surfaces were measured using transmission Fourier-transform infrared (FTIR) spectroscopy. The FTIR desorption measurements were performed in situ in an ultrahigh-vacuum chamber using high-surface-area porous-silicon samples. The kinetics for hydrogen desorption from the monohydride and dihydride species was monitored using the SiH stretch mode at 2102 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ and the ${\mathrm{SiH}}_{2}$ scissors mode at 910 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$, respectively. Annealing studies revealed that hydrogen from the ${\mathrm{SiH}}_{2}$ species desorbed between 640 and 700 K, whereas hydrogen from the SiH species desorbed between 720 and 800 K. Isothermal studies revealed second-order hydrogen desorption kinetics for both the monohydride and dihydride surface species. Desorption activation barriers of 65 kcal/mol (2.82 eV) and 43 kcal/mol (1.86 eV) were measured for the monohydride and dihydride species, respectively. These desorption activation barriers yield upper limits of 84.6 kcal/mol (3.67 eV) and 73.6 kcal/mol (3.19 eV) for the Si-H chemical bond energies of the SiH and ${\mathrm{SiH}}_{2}$ surface species.

479 citations