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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
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TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Journal ArticleDOI

Optical properties of InAs quantum dots in a Si matrix

TL;DR: In this article, the optical properties of nanoscale InAs quantum dots (QDs) in a Si matrix were investigated and it was shown that 7 ML InAs leads to the formation of coherent islands with dimensions in the 2-4 nm range.
Journal ArticleDOI

Structural and chemical trends in doped silicon nanocrystals: First-principles calculations

TL;DR: In this article, the electronic and structural properties of substitutional group-V donors (N, P, As, Sb) and group-III acceptors (B, Al, Ga, In) in silicon nanocrystals with hydrogen passivation are explored using first-principles calculations based on hybrid density functional theory with complete geometrical optimization.
Journal ArticleDOI

Photoluminescence quenching of silicon nanoparticles in phospholipid vesicle bilayers

TL;DR: In this paper, the authors used photoluminescence quenching to determine the accessibility of membrane-embedded nanoparticles to aqueous and lipid-bound quenchers.
Journal ArticleDOI

Luminescence of free-standing versus matrix-embedded oxide-passivated silicon nanocrystals: The role of matrix-induced strain

TL;DR: In this article, a large number of experimental data from various sources was collected to demonstrate that free-standing (FS) oxide-passivated silicon nanocrystals (SiNCs) exhibit considerably blueshifted emission, by 200
Journal ArticleDOI

Picosecond photoluminescence and transient absorption in silicon nanocrystals

TL;DR: In this article, the photoluminescence decay in silicon nanocrystals prepared by ion implantation was investigated and shown to scale linearly with the pump and have a decay time of $1100.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI

Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI

Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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