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Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
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In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
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Journal ArticleDOI
The effect of etching time of porous silicon on solar cell performance
TL;DR: Porous silicon (PS) layers based on crystalline silicon (c-Si) n-type wafers with (1-0-0) orientation were prepared using electrochemical etching process at different etching times.
Journal ArticleDOI
Spin‐dependent effects in porous silicon
TL;DR: In this paper, the Pb center, the silicon dangling bond at the crystalline Si/SiO2 interface, is found to be the dominant paramagnetic defect, influencing both photoconductivity and photoluminescence.
Journal ArticleDOI
Evolution of the Ultrafast Photoluminescence of Colloidal Silicon Nanocrystals with Changing Surface Chemistry
Zhenyu Yang,Glenda De Los Reyes,Lyubov V. Titova,Ilya Sychugov,Mita Dasog,Jan Linnros,Frank A. Hegmann,Jonathan G. C. Veinot +7 more
TL;DR: In this article, the photoluminescence properties of alkyl-functionalized SiNCs were investigated using two related methods: thermal and photochemical hydrosilylation.
Journal ArticleDOI
Patterned microstructures of porous silicon by dry-removal soft lithography
Journal ArticleDOI
Photoluminescence of nanostructured PbTiO3 processed by high-energy mechanical milling
Edson R. Leite,L. P. S. Santos,N. L. V. Carreño,Elson Longo,Carlos A. Paskocimas,José Arana Varela,F. Lanciotti,Cem Campos,Paulo S. Pizani +8 more
TL;DR: In this paper, a high-energy mechanical milling of ultrafine PbTiO 3 powder was used to obtain photoluminescence (PL) emission in the visible range.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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