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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
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TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Porous silicon as an entrapping matrix for the immobilization of urease

TL;DR: In this paper, the porosity and the amount of loading of the enzyme were optimized for obtaining highest efficiency, and the effect of entrapment and therefore the activity retained by the porous silicon surface was monitored by colorimetric assay.
Journal ArticleDOI

Ultra-low reflection porous silicon nanowires for solar cell applications

TL;DR: In this paper, high density vertically aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted chemical etching process and a linear dependency of nanowire length to the etching time was obtained and the change in the growth rate of the nano-wires by increasing etching durations was shown.
Journal ArticleDOI

Mechanism of photoluminescence of Si nanocrystals fabricated in a SiO2 matrix

TL;DR: In this article, the luminescence properties of silicon nanocrystals fabricated by Si ion implantation into a SiO2 matrix and subsequent thermal annealing have been studied.
Journal ArticleDOI

Time-Resolved Synchrotron Radiation Excited Optical Luminescence: Light-Emission Properties of Silicon-Based Nanostructures

TL;DR: Luminescence from silicon nanostructures (porous silicon, silicon nanowires, and Si-CdSe heterostructure) is used to illustrate the applicability of these techniques and their great potential in future applications.
Journal ArticleDOI

Dielectric spectroscopy data treatment: I. Frequency domain

TL;DR: In this article, the authors considered the computational methods for complex dielectric permittivity data treatment and proposed a method based on a penalized maximum likelihood approach, for obtaining a smooth estimate for the model parameters expressed as functions of temperature.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
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Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
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Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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