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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
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TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Formation of nanowhiskers on a substrate of dissimilar material

TL;DR: In this paper, a method for forming a nanowhisker of a III-V semiconductor material on a silicon substrate, consisting of preparing a surface of the silicon substrate with measures including passivating the substrate surface by HF etching, is described.
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Polycrystalline Si nanoparticles and their strong aging enhancement of blue photoluminescence

TL;DR: In this article, nearly spherical polycrystalline Si nanoparticles with 20 nm diameter were fabricated based on laser ablation of silicon wafer immersed in sodium dodecyl sulfate aqueous solution.
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Functionalised porous silicon as a biosensor: emphasis on monitoring cells in vivo and in vitro

TL;DR: A critical assessment of the development of porous silicon optical biosensors from the early demonstrations of affinity based sensing to the current trends in monitoring single cell activity and perspectives in the use of photonic microparticles for biomedical applications are provided.
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Theory of the luminescence of porous silicon

TL;DR: In this article, the physical origin of the luminescence bands of porous silicon is discussed using results of calculations of electronic and optical properties of silicon nanostructures, and it is shown that polysilanes can emit visible light in some cases but with radiative lifetimes in the nanosecond range.
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Porous silicon organic vapor sensor

TL;DR: In this article, a porous silicon (PS) layer was investigated as a sensing material to detect organic vapors, which was obtained by electrochemical anodization of p-type crystalline silicon (c-Si) in an ethanoic HF solution in order to produce a mesoporous material.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
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Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
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Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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