Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
Reads0
Chats0
TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
More filters
PatentDOI
Wafer-scale optical bus
TL;DR: In this paper, an improved wafer-wide optical bus interconnect is described for use in waferscale integration systems, which couples emitters and detectors distributed throughout the wafer.
Journal ArticleDOI
Toward a mechanistic understanding of exciton-mediated hydrosilylation on nanocrystalline silicon.
TL;DR: White-light initiated hydrosilylation of nanocrystalline porous silicon was found to be far more efficient (in terms of both kinetics and yield) in the presence of electron-accepting molecules with suitably high reduction potentials, particularly halocarbons.
Journal ArticleDOI
Unified theory of direct or indirect band-gap nature of conventional semiconductors
TL;DR: In this paper, the authors reveal that the existence of occupied cation $d$ bands is a prime element in determining the directness of the band gap of semiconductors through the couplings, which push the conduction band energy levels at the $X$ and $L$ valley up, but leave the \ensuremath{\Gamma}-valley conduction state unchanged.
Journal ArticleDOI
Morphological, compositional, structural, and optical properties of Si-nc embedded in SiOx films.
J. Alberto Luna López,J. Carrillo López,D. E. Vázquez Valerdi,Godofredo Garcia Salgado,T. Díaz-Becerril,A. Ponce Pedraza,F. Flores Gracia +6 more
TL;DR: The dependence of PL on the composition, structure, and morphology of the Si-ncs embedded in a matrix of non-stoichiometric SiOx films is analyzed to obtain a relationship between composition, Si-nc size, energy bandgap, PL, and surface morphology.
Journal ArticleDOI
In situ passivation and blue luminescence of silicon clusters using a cluster beam/H2O codeposition production method
Anthony Brewer,K. von Haeften +1 more
TL;DR: In this paper, a Si/SiO core-shell structure was revealed, where the luminescence stems from oxygen deficient defects, and the main advantage of their production method is that it yields the luminecent Si nanoparticles in one step.
References
More filters
Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
Related Papers (5)
The structural and luminescence properties of porous silicon
Visible light emission due to quantum size effects in highly porous crystalline silicon
A. G. Cullis,Leigh T. Canham +1 more