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Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
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In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
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Initiation and Growth of Self-Organized TiO2 Nanotubes Anodically Formed in NH4F ∕ ( NH4 ) 2SO4 Electrolytes
TL;DR: In this paper, the anodic formation of self-organized porous TiO 2 on titanium was investigated in 1 M (NH 4 ) 2 SO 4 electrolytes containing 0.5 wt % NH 4 F by potential sweeps to 20 V S C E.
Journal ArticleDOI
Matrix-free methods for laser desorption/ionization mass spectrometry.
TL;DR: This review examines the approaches to matrix-free LDI mass spectrometry including desorption/ionization on silicon (DIOS), sol-gels, and carbon-based microstructures and those that do not require matrix to be mixed with the analyte and therefore does not require co-crystallization.
Journal ArticleDOI
Silicon Nanocrystals: Size Matters
TL;DR: In this article, a review of size controlled silicon-nanocrystal synthesis is presented, where the size distribution of the nanocrystals compared with those obtained by conventional synthesis processes such as ion implantation into SiO 2 or phase separation of sub-stoichiometric SiO x layers is discussed.
Journal ArticleDOI
Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires
TL;DR: In this paper, a combination of electron beam lithography, NF3 reactive ion etching, and dry thermal oxidation has been successfully implemented to yield 2-nm wide Si nanowires with aspect ratio of more than 100 to 1.
Journal ArticleDOI
Visible photoluminescence in Si+‐implanted thermal oxide films on crystalline Si
TL;DR: In this article, the authors investigated visible photoluminescence excited by Ar ion laser (488 nm, 2.54 eV) at room temperature from Si+implanted thermal oxide films grown on crystalline Si wafer, as-implanted and after subsequent annealing in vacuum.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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