Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract: Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.
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TL;DR: In this paper, it was shown that silicon is an extremely inefficient light emitter, and for this reason has not enjoyed the same level of dominance in optical applications as other semiconductors.
Abstract: Silicon is at the heart of the microelectronics revolution. Its dominance over other semiconductors is intimately tied to its superior materials and processing properties and to the tremendous base of technology that has developed around it. Another semiconductor is not likely to displace silicon as the material of choice in electronic applications. Silicon, however, is an extremely inefficient light emitter, and for this reason has not enjoyed the same level of dominance in optical applications.
239 citations
TL;DR: In this article, the luminescence spectra of stain films produced by anodic etching of Si in HNO3:H2O solutions have been observed and compared to those reported recently for porous Si films.
Abstract: Etching of Si in a variety of solutions is known to cause staining. These stain layers consist of porous material similar to that produced by anodic etching of Si in HF solutions. We have observed photoluminescence peaked in the red from stain‐etched Si wafers of different dopant types, concentrations, and orientations produced in solutions of HF:HNO3:H2O. Luminescence is also observed in stain films produced in solutions of NaNO2 in HF, but not in stain films produced in solutions of CrO3 in HF. The luminescence spectra are similar to those reported recently for porous Si films produced by anodic etching in HF solutions. However, stain films are much easier to produce, requiring no special equipment.
239 citations
TL;DR: In this paper, a review of spatially confined, non-equilibrium physics in nanoporous media is presented. And a particular emphasis is put on texture formation upon crystallisation in nanopore-confined condensed matter, a topic both of high fundamental interest and of increasing nanotechnological importance.
Abstract: Spatial confinement in nanoporous media affects the structure, thermodynamics and mobility of molecular soft matter often markedly. This article reviews thermodynamic equilibrium phenomena, such as physisorption, capillary condensation, crystallisation, self-diffusion, and structural phase transitions as well as selected aspects of the emerging field of spatially confined, non-equilibrium physics, i.e. the rheology of liquids, capillarity-driven flow phenomena, and imbibition front broadening in nanoporous materials. The observations in the nanoscale systems are related to the corresponding bulk phenomenologies. The complexity of the confined molecular species is varied from simple building blocks, like noble gas atoms, normal alkanes and alcohols to liquid crystals, polymers, ionic liquids, proteins and water. Mostly, experiments with mesoporous solids of alumina, carbon, gold, silica, and silicon having pore diameters ranging from a few up to 50 nanometers are presented. The observed peculiarities of nanopore-confined condensed matter are also discussed with regard to applications. A particular emphasis is put on texture formation upon crystallisation in nanoporous media, a topic both of high fundamental interest and of increasing nanotechnological importance, e.g., for the synthesis of organic/inorganic hybrid materials by melt infiltration, the usage of nanoporous solids in crystal nucleation or in template-assisted electrochemical deposition of nano structures.
238 citations
TL;DR: In this paper, a correlation of Raman and photoluminescence spectra was found to indicate that the observed luminescence originates from extremely small microstructures.
Abstract: The discovery of luminescence in electrochemically etched porous silicon is an extremely important scientific breakthrough with enormous technological implications. It opens the door for silicon, the most important microelectronic material, as a possible material for optoelectronics applications. Our result, a correlation of Raman and photoluminescence spectra, shows that the observed luminescence is originated from extremely small microstructures. As the luminescent peak increases in photon energy, the Raman feature shifts to lower energy, remaining sharp, and eventually splits, developing into TO and LO modes. No peak at 480 cm−1 is observed, which indicates no substantial contribution from an amorphous region. These data provide strong evidence of the role of microstructures in porous silicon.
236 citations
TL;DR: In this paper, the luminescence behavior of thermally oxidized porous silicon has been examined at various temperatures and times, and no blue shifting of photoluminescence has been noted with extended oxidation time (3-120 min), in a range where a 30% oxide thickness increase has been reported.
Abstract: The luminescence behavior of thermally oxidized porous silicon has been examined at various temperatures and times. No blue shifting of the photoluminescence has been noted with extended oxidation time (3–120 min), in a range where a 30% oxide thickness increase has been reported. This result does not easily fit the quantum confinement model, since the luminescence does not appear to depend on particle sizes. An oxide related luminescence, which is broad, in the red, and stable at high temperatures will be discussed as a possible source of this light emission.
235 citations
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TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Abstract: Properties of electrolyte-semiconductor barriers are described, with emphasis on germanium. The use of these barriers in localizing electrolytic etching is discussed. Other localization techniques are mentioned. Electrolytes for etching germanium and silicon are given.
1,039 citations
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Abstract: We have found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive. With preparation in this manner, the surface-recombination velocity on Si111g is only 0.25 cm/sec, which is the lowest value ever reported for any semiconductor. Multiple-internal-reflection infrared spectroscopy shows that the surface appears to be covered by covalent Si-H bonds, leaving virtually no surface dangling bonds to act as recombinatiuon centers. These results have implications for the ultimate efficiency of silicon solar cells.
910 citations
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Abstract: Multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces. These very inert surfaces are found to be almost completely covered by atomic hydrogen. Results using polarized radiation on both flat and stepped Si(111) and Si(100) surfaces reveal the presence of many chemisorption sites (hydrides) that indicate that the surfaces are microscopically rough, although locally ordered. In particular, the HF‐prepared Si(100) surface appears to have little in common with the smooth H‐saturated Si(100) surface prepared in ultrahigh vacuum.
588 citations
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
Abstract: Hydrogen desorption kinetics from monohydride and dihydride species on crystalline-silicon surfaces were measured using transmission Fourier-transform infrared (FTIR) spectroscopy. The FTIR desorption measurements were performed in situ in an ultrahigh-vacuum chamber using high-surface-area porous-silicon samples. The kinetics for hydrogen desorption from the monohydride and dihydride species was monitored using the SiH stretch mode at 2102 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ and the ${\mathrm{SiH}}_{2}$ scissors mode at 910 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$, respectively. Annealing studies revealed that hydrogen from the ${\mathrm{SiH}}_{2}$ species desorbed between 640 and 700 K, whereas hydrogen from the SiH species desorbed between 720 and 800 K. Isothermal studies revealed second-order hydrogen desorption kinetics for both the monohydride and dihydride surface species. Desorption activation barriers of 65 kcal/mol (2.82 eV) and 43 kcal/mol (1.86 eV) were measured for the monohydride and dihydride species, respectively. These desorption activation barriers yield upper limits of 84.6 kcal/mol (3.67 eV) and 73.6 kcal/mol (3.19 eV) for the Si-H chemical bond energies of the SiH and ${\mathrm{SiH}}_{2}$ surface species.
479 citations