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Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
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TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation

TL;DR: In this article, it was shown that annealing these samples in flowing O2 at 1000 °C for times up to 30 min results in oxidation of the Si nanocrystals, first close to the SiO2 surface and later at greater depths.
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Sol−Gel Derived Urea Cross-Linked Organically Modified Silicates. 2. Blue-Light Emission

TL;DR: In this paper, the photoluminescence and the local structure of sol−gel derived organic−inorganic hybrids, so-called ureasils, are discussed and small-angle X-ray scattering (SAXS) results suggest a diphasic structure for the morphology of the hybrids induced by local phase separation between siliceous domains and polymeric regions.
Journal ArticleDOI

Device physics - The optical age of silicon

TL;DR: The silicon chip has been the mainstay of the electronics industry and it may similarly come to dominate photonics, and a key component — a high-frequency optical modulator — has been fabricated.
Journal ArticleDOI

Let there be light

Philip Ball
- 22 Feb 2001 - 
TL;DR: A silicon laser would revolutionize telecommunications, electronics and computing, and Philip Ball discovers that researchers are becoming more optimistic about its light-emitting abilities.
Journal ArticleDOI

Correlation between silicon hydride species and the photoluminescence intensity of porous silicon

TL;DR: The role of silicon hydride species in the photoluminescence intensity behavior of porous Si has been studied in this article, where surfaces of luminescent porous Si samples were converted to a predominate SiH termination using a remote H plasma.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
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Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
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Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
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Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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