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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
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TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Nanostructured Tungsten Oxide – Properties, Synthesis, and Applications

TL;DR: A general review of nanostructured Tungsten oxides, their properties, methods of synthesis, and a description of how they can be used in unique ways for different applications can be found in this article.
Journal ArticleDOI

High‐Aspect‐Ratio TiO2 Nanotubes by Anodization of Titanium

TL;DR: It is demonstrated for the first time how high-aspectratio, self-organized, TiO2 films can be grown by tailoring the electrochemical conditions during titanium anodization by controlling the self-induced acidification of the pore bottom that is caused by the electro chemical dissolution of the metal.
Journal ArticleDOI

Erbium implanted thin film photonic materials

TL;DR: The role of implantation defects, the effect of annealing, concentration dependent effects, and optical activation are discussed and compared for different Er-doped thin film photonic materials.
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Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires

TL;DR: In this article, a hybrid pulsed laser ablation/chemical capor deposition (PLA-CVD) process was proposed for the synthesis of semiconductor nanowires with longitudinal ordered heterostructures.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
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Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
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Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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