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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
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TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Journal ArticleDOI

Black Silicon Photovoltaics

TL;DR: In this paper, an overview of the fabrication methods of black silicon, their resulting morphologies, and a quantitative comparison of their optoelectronic properties is presented, where the optical absorption and the minority carrier lifetime are used as benchmark parameters.
Journal ArticleDOI

Novel technique for preparing porous silicon

TL;DR: In this article, the authors performed photoluminescence studies on porous, p-type as well as n-type silicon wafers which have been prepared in air or in a dry nitrogen atmosphere, utilizing a spark-erosion technique.
Journal ArticleDOI

Optical amplification and lasing by stimulated Raman scattering in silicon waveguides

TL;DR: In this paper, the authors describe the underlying physics related to the Raman scattering in silicon and experimental results of SRS in silicon waveguides, and demonstrate that the free carrier density inside the waveguide can be reduced significantly with a reverse bias of the p-i-n diode.
Journal ArticleDOI

A novel surface-micromachined capacitive porous silicon humidity sensor

TL;DR: In this article, the design, fabrication and characterisation of a novel humidity sensor is presented, which consists of a capacitor with a porous silicon dielectric, two thermoresistors and a refresh resistor.
Journal ArticleDOI

Preparation of thin porous silicon layers by stain etching

TL;DR: In this paper, a method of preparation of thin (1000 A) porous silicon layers by chemical etching of c-Si in HF:HNO 3 :H 2 O=1:3:5 solution is reported wherein a thin Al film is deposited by evaporation on the silicon surface prior to etching.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI

Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI

Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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