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Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
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In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
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Silicon Nanocrystals: Fundamental Theory and Implications for Stimulated Emission
TL;DR: In this paper, the energy levels and recombination rates of doped and undoped Si nanocrystals were investigated and the effects of energy transfer mechanisms on the energy transfer were discussed.
Journal ArticleDOI
Nanoscale silicon microcavities for biosensing
TL;DR: In this article, the authors report the design and testing of a versatile biosensor exclusively using silicon, which consists of a microcavity resonator made of various porous silicon layers.
Journal ArticleDOI
Doping of a quantum dot
Raphael Tsu,Davorin Babić +1 more
TL;DR: The doping of a quantum dot is an important issue particularly because the luminescence of porous silicon has been attributed to quantum confinement as discussed by the authors, since electrochemical etching and possible electroluminescence devices are intimately connected with extrinsic conduction, including interactions with induced charges at the dielectric discontinuity.
Journal ArticleDOI
Endohedrally Doped Cage Clusters
TL;DR: This comprehensive review presents results of many such developments in this fast-growing field including endohedrally doped Al, Ga, and In clusters, and performs ab initio calculations to present updated results of the most stable atomic structures and fundamental electronic properties of the endohedral doped cage clusters.
Journal ArticleDOI
Illuminating Silicon Surface Hydrosilylation: An Unexpected Plurality of Mechanisms
TL;DR: In this article, the insertion of an alkene or alkyne into a surface Si-H bond, is an ideal approach to produce these covalent Si-C bonds, and can be carried out in a number of ways.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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