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Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
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In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
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Properties of silicon-electrolyte junctions and their application to silicon characterization
TL;DR: In this article, it is shown that despite the complexities of chemical reactions involved, a basic understanding of the electrode behavior is possible from a semiconductor physics point of view and that it can be advantageous to use the silicon electrolyte junction for analytical purposes.
Journal ArticleDOI
Photoluminescence and formation mechanism of chemically etched silicon
TL;DR: In this paper, room temperature photoluminescence (PL) from Si chemically etched (CE) in HF•HNO3-based solution has been observed, and it was shown that the etched Si has a surface morphology similar to that of luminescent porous Si fabricated by conventional anodization.
Journal ArticleDOI
Formation of porous silicon by metal particle enhanced chemical etching in HF solution and its application for efficient solar cells
TL;DR: In this article, a photoelectrochemical solar cell equipped with a Pt-particle-modified porous n-Si electrode gave 13.3 mW cm−2 of maximum output power.
Journal ArticleDOI
Synthesis, properties, and applications of silicon nanocrystals
TL;DR: In this article, the synthesis and properties of silicon nanocrystals have been investigated for several years because of their many interesting properties and their potential use in several applications, and the authors provide a comprehensive review of their contribution to the field.
Journal ArticleDOI
Phonon mode study of Si nanocrystals using micro‐Raman spectroscopy
TL;DR: In this paper, the first-order Raman spectra of hydrogenated nanocrystalline silicon (nc:Si:H) films showed unexpected features in their optical vibrational modes for crystallites with sizes ranging from 2 to 6 nm.
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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