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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
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TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Correlation of the structural and optical properties of luminescent, highly oxidized porous silicon

TL;DR: In this article, the light-emitting properties of rapid thermally oxidized porous Si are studied by both photoluminescence and cathodoluminecence methods, and the structure of the material is examined by transmission electron microscopy, while its oxygen content is determined by x-ray microanalysis.
Journal ArticleDOI

Nanofabrication with pulsed lasers

TL;DR: In this article, the authors consider spontaneously formed architectures on the surface under laser-matter interactions, which can then be either deposited on a substrate to form a nanostructured film or released into a liquid environment to form colloidal nanoparticle solution.
Journal ArticleDOI

Porous Silicon-Based Photonic Biosensors: Current Status and Emerging Applications

TL;DR: New approaches for biosensor design, new implementations of PSi as a host matrix for synergistic materials that enable alternate biosensor readout approaches and signal enhancement, new methods to reliably achieve higher detection sensitivity, and new emphases on detection of molecules in complex media, integration with microfluidics for sample handling, and multiplexed detection capabilities have been reported.
Journal ArticleDOI

Control of photoluminescence properties of Si nanocrystals by simultaneously doping n- and p-type impurities

TL;DR: In this paper, the effects of B and P codoping on photoluminescence properties of Si nanocrystals (nc-Si) were studied systematically and it was shown that the PL intensity of codoped nc-Si is always higher than that of either P- or B-doped nm-Si.
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Heterogeneous Integration of Compound Semiconductors

TL;DR: The Smart-Cut TM process as mentioned in this paper is a generic process that can be employed to split and transfer fine monocrystalline layers from various crystals, and it can be applied to cleaving thin layers from freestanding GaN, InP, and GaAs wafers.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
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Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
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Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
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Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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