Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract: Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.
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TL;DR: Graft polymerization has been used, for the first time, to prepare a dense conductive polymer coating on free-standing luminescent silicon nanoparticles as mentioned in this paper, which maintained their photoluminescence and crystallinity after surface modification.
Abstract: Graft polymerization has been used, for the first time, to prepare a dense conductive polymer coating on free-standing luminescent silicon nanoparticles. The silicon nanoparticles maintained their photoluminescence and crystallinity after surface modification. The nanoparticles were first surface hydroxylated and then reacted with (3-bromopropyl)trichlorosilane to form a dense bromopropylsilane monolayer. This was further reacted with aniline, which displaced the bromine atoms. The surface-bound aniline molecules were then used as active sites for the graft polymerization of polyaniline (PANI). The composition, structure, morphology, and other physical properties of the PANI-capped Si nanoparticles were examined by X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, and transmission electron microscopy. The silane self-assembled monolayer effectively protected the silicon particles against photoluminescence quenching and degradation in basic solutions that rapidly...
100 citations
TL;DR: Raman characterization of germanium (Ge) nanocrystals embedded in amorphous silicon oxide (a-SiO2) films synthesized by rapid thermal annealing (RTA) has been carried out.
Abstract: Raman characterization of germanium (Ge) nanocrystals embedded in amorphous silicon oxide (a-SiO2) films synthesized by rapid thermal annealing (RTA) has been carried out. The samples were prepared by cosputtering Ge and SiO2 targets using a rf magnetron sputtering machine. Ge nanocrystals can only be obtained from samples sputtered with six pieces of Ge attached to the SiO2 target. For samples annealed at different RTA temperatures, the Raman spectra indicated a transition from amorphous to nanocrystalline Ge when annealed between 600 and 750 °C. The spectra were analyzed in terms of phonon confinement model and the estimated nanocrystal size was between 20 and 66 A. A minimum annealing time of 160 s at 750 °C was necessary for Ge nanocrystal formation. Strong visible broadband photoluminescence was observed from the nanocrystals and the photoluminescence showed a blueshift with decrease in the nanocrystal size. The effect of compressive stress on nanocrystal growth was examined by varying the rampup and...
99 citations
TL;DR: In this paper, a supercritical fluid inclusion-phase technique was developed to embed silicon nanowires, with size monodispersed diameters, within the pores of mesoporous silica hosts.
Abstract: A unique supercritical fluid inclusion-phase technique has been developed to embed silicon nanowires, with size monodispersed diameters, within the pores of mesoporous silica hosts. These nanocomposite materials displayed quite intense room temperature ultraviolet and visible photoluminescence (PL), and the emission wavelength maximum was found to be dependent on the diameter of the encased nanowires. This previously unobserved wavelength dependence of the ultraviolet PL with decreasing nanowire size is explained using a continuum strain model resulting from confinement of the wires within the host lattice.
99 citations
TL;DR: In this article, the evolution of the photoluminescence was measured as a function of the time the samples were exposed to air and oxidized with hydrofluoric acid (HF) vapor.
Abstract: Silicon nanocrystals were prepared by laser pyrolysis of silane in a gas flow reactor and deposited on substrates by cluster beam deposition. The evolution of the photoluminescence was measured as a function of the time the samples were exposed to air. With gradual air exposure and oxidation, the photoluminescence increases in intensity and its peak wavelength shifts to the blue. At the same time, the photoluminescence band becomes wider. To remove the oxide layer, the samples were exposed to hydrofluoric acid (HF) vapor. The HF attack has no influence on the band position but leads to a smaller width. The observations can be explained in terms of quantum confinement as the origin of the photoluminescence. Only for the smallest Si nanocrystals, an interface state seems to limit the maximum photoluminescence energy to 2.1 eV.
99 citations
TL;DR: Emerging applications of photonic ion sources in mass spectrometry benefit from ultrahigh sensitivity, a wide dynamic range for detection and quantitation, and a broad coverage of adsorbates ranging from small organic molecules to biopolymers, as well as to highly complex samples like single cells.
Abstract: Interactions between pulsed laser radiation and nanostructured materials, with dimensions ranging from 1 nm to 500 nm, can result in enhanced desorption and ionization of organic and biomolecular adsorbates. When the critical dimensions of the nanostructures fall below the characteristic lengths for the involved transport processes, novel regimes of ion production are observed. Systems with dimensions commensurate with the wavelength of the laser radiation are the basis of photonic ion sources with unique properties, including polarization dependent ion yields and fragmentation. The main characteristics of these systems are often governed by altered modes of transport, e.g., ballistic vs. diffusive, energy confinement, plasmon resonances, and local field enhancements. Some structures offer control over the internal energy and the active fragmentation channels for the produced ions. Emerging applications of photonic ion sources in mass spectrometry benefit from ultrahigh sensitivity, a wide dynamic range for detection and quantitation, and a broad coverage of adsorbates ranging from small organic molecules to biopolymers, as well as to highly complex samples like single cells.
99 citations
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TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Abstract: Properties of electrolyte-semiconductor barriers are described, with emphasis on germanium. The use of these barriers in localizing electrolytic etching is discussed. Other localization techniques are mentioned. Electrolytes for etching germanium and silicon are given.
1,039 citations
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Abstract: We have found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive. With preparation in this manner, the surface-recombination velocity on Si111g is only 0.25 cm/sec, which is the lowest value ever reported for any semiconductor. Multiple-internal-reflection infrared spectroscopy shows that the surface appears to be covered by covalent Si-H bonds, leaving virtually no surface dangling bonds to act as recombinatiuon centers. These results have implications for the ultimate efficiency of silicon solar cells.
910 citations
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Abstract: Multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces. These very inert surfaces are found to be almost completely covered by atomic hydrogen. Results using polarized radiation on both flat and stepped Si(111) and Si(100) surfaces reveal the presence of many chemisorption sites (hydrides) that indicate that the surfaces are microscopically rough, although locally ordered. In particular, the HF‐prepared Si(100) surface appears to have little in common with the smooth H‐saturated Si(100) surface prepared in ultrahigh vacuum.
588 citations
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
Abstract: Hydrogen desorption kinetics from monohydride and dihydride species on crystalline-silicon surfaces were measured using transmission Fourier-transform infrared (FTIR) spectroscopy. The FTIR desorption measurements were performed in situ in an ultrahigh-vacuum chamber using high-surface-area porous-silicon samples. The kinetics for hydrogen desorption from the monohydride and dihydride species was monitored using the SiH stretch mode at 2102 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ and the ${\mathrm{SiH}}_{2}$ scissors mode at 910 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$, respectively. Annealing studies revealed that hydrogen from the ${\mathrm{SiH}}_{2}$ species desorbed between 640 and 700 K, whereas hydrogen from the SiH species desorbed between 720 and 800 K. Isothermal studies revealed second-order hydrogen desorption kinetics for both the monohydride and dihydride surface species. Desorption activation barriers of 65 kcal/mol (2.82 eV) and 43 kcal/mol (1.86 eV) were measured for the monohydride and dihydride species, respectively. These desorption activation barriers yield upper limits of 84.6 kcal/mol (3.67 eV) and 73.6 kcal/mol (3.19 eV) for the Si-H chemical bond energies of the SiH and ${\mathrm{SiH}}_{2}$ surface species.
479 citations