Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
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In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.Abstract:
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.read more
Citations
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Journal ArticleDOI
Models and Mechanisms for the Luminescence of Porous Si
TL;DR: In this paper, the authors make the case for a model in which the dominant absorption characteristics are those of a quantum well, but luminescence occurs via boundary states on the nanocrystalline particles.
Patent
Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
TL;DR: In this paper, a nano-engineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array, wherein each nanowisker is sited within a distance from a predetermined site not greater than about 20% of its distance from its nearest neighbor.
Journal ArticleDOI
The seminal literature of nanotechnology research
TL;DR: C Citation-assisted background is a highly systematic approach for identifying seminal references that serves as a supplement and is not a substitute for the judgment of the authors.
Journal ArticleDOI
Simultaneous gold deposition and formation of silicon nanowire arrays
Kui-Qing Peng,Jing Zhu +1 more
TL;DR: In this paper, a method for simultaneously producing oriented silicon nanowire arrays and depositing gold on a silicon substrate from aqueous HF solution containing KAuCl4 near room temperature was presented.
Journal ArticleDOI
Carrier transport in porous silicon light-emitting devices
Abstract: This work presents a comprehensive investigation of carrier transport properties in light‐emitting porous silicon (LEPSi) devices. Models that explain the electrical characteristics and the electroluminescence properties of the LEPSi devices are developed. In metal/LEPSi devices, the forward current density–voltage (J–V) behavior follows a power law relationship (J∼Vm), which indicates a space charge current attributed to the carriers drifting through the high resistivity LEPSi layer. In LEPSi pn junction devices, the forward J–V behavior follows an exponential relationship (J∼eeV/nkT), which indicates that the diffusion of carriers makes a major contribution to the total current. The temperature dependence of the J–V characteristics, the frequency dependence of the capacitance–voltage characteristics, and the frequency dependence of the electroluminescence intensity support the models. Analysis of devices fabricated with a LEPSi layer of 80% porosity results in a relative permittivity of ∼3.3, a carrier ...
References
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Journal ArticleDOI
Electrolytic shaping of germanium and silicon
TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Journal ArticleDOI
Unusually low surface-recombination velocity on silicon and germanium surfaces.
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Journal ArticleDOI
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI
Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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